MA4GP907
Abstract: 10ghz pin diode
Text: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL
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MA4GP907
MA4GP907
10ghz pin diode
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Untitled
Abstract: No abstract text available
Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES • Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption
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50GHz
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Untitled
Abstract: No abstract text available
Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features • Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance
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MASW-002103-1363
MASW-002103-1363
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Untitled
Abstract: No abstract text available
Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features • Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance
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MASW-002103-1363
MASW-002103-1363
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MASW-000834-13560T
Abstract: MADR-008851-000100 MASW-000834 0603CS-27NXJLW S2083 madr-008851
Text: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Functional Diagram TOP VIEW • Exceptional Broadband Performance, 0.05 - 6.0 GHz Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA
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MASW-000834-13560T
2010MHz
MASW-000834-13560T
MADR-008851-000100
MASW-000834
0603CS-27NXJLW
S2083
madr-008851
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Untitled
Abstract: No abstract text available
Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state
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50GHz
-10mA
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Untitled
Abstract: No abstract text available
Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state
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50GHz
-10mA
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MA4GP907
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation
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MA4GP907
MA4GP907
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Untitled
Abstract: No abstract text available
Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation
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MA4GP907
MA4GP907
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Untitled
Abstract: No abstract text available
Text: All Mikroelektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to
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charging lithium ic
Abstract: MM1332 MM1333
Text: MITSUMI Control for Lithium Ion Battery Charging one cell MM1333 Control for Lithium Ion Battery Charging (one cell) Monolithic IC MM1333 Outline This IC was developed for use in charging lithium ion batteries. PNP power transistor or P-MOS FET is mounted externally to control charging. This IC is for use with a single cell only, and provides precise control
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MM1333
MM1332,
charging lithium ic
MM1332
MM1333
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3 EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC C2 *36A436+6123 4286544
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FP50R06W2E3
C26A2
961AF86
-BCD66
-BCD66:
1231423567896AB
4112CD3567896EF
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Thermal resistance DIP8
Abstract: wiper motor 4586A U842B U842B-FP ISO 7637-1 2002 intermittent relay with 4 pins
Text: Features • • • • • • • • • • • • • • Interval Input: Low Side Wipe/Wash Input: Low Side Park Input: High Side Park Position Output Driver Protected Against Short Circuit All Time Periods Determined by RC Oscillator Fixed Relay Activation Time of 500 ms
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Untitled
Abstract: No abstract text available
Text: MITSUMI Control of Lithium Ion Batteries Charging one cell MM1333 Control of Lithium Ion Batteries Charging (one cell) Monolithic IC MM1333 Outline This IC was developed for use in charging lithium ion batteries. PNP power transistor or P-MOS FET is mounted externally to control charging. This IC is for use with a single cell only, and provides precise control
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MM1333
MM1332,
MM1333
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mitsumi variable capacitor
Abstract: MITSUMI variable capacitors MM1333J r40031 charging lithium ic diode r4 MM1333 MM1332
Text: MITSUMI Control for Lithium Ion Battery Charging one cell MM1333 Control for Lithium Ion Battery Charging (one cell) Monolithic IC MM1333 Outline This IC was developed for use in charging lithium ion batteries. PNP power transistor or P-MOS FET is mounted externally to control charging. This IC is for use with a single cell only, and provides precise control
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MM1333
MM1332,
mitsumi variable capacitor
MITSUMI variable capacitors
MM1333J
r40031
charging lithium ic
diode r4
MM1333
MM1332
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charging lithium ic
Abstract: mitsumi variable capacitor MM1332 MM1333 "Lithium Ion battery"
Text: MITSUMI Control for Lithium Ion Battery Charging one cell MM1333 Control for Lithium Ion Battery Charging (one cell) Monolithic IC MM1333 Outline This IC was developed for use in charging lithium ion batteries. A power transistor or P-MOS FET is mounted
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MM1333
MM1332,
charging lithium ic
mitsumi variable capacitor
MM1332
MM1333
"Lithium Ion battery"
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mitsumi variable capacitor
Abstract: charging lithium ic MM1333J MM1332 MM1333
Text: MITSUMI Lithium-Ion Battery Charge Control 1 cell MM1333 Lithium-Ion Battery Charge Control (1 cell) Monolithic IC MM1333 Outline This IC was developed for lithium-ion battery charge control. It controls charging with an external PNP power transistor or p-MOSFET. It is used only for 1-cell batteries and provides a high-precision charge voltage.
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MM1333
MM1332
mitsumi variable capacitor
charging lithium ic
MM1333J
MM1332
MM1333
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TRANSISTOR nf 842
Abstract: wiper motor U842B operation of wiper motor and relay wipe wash
Text: U 842 B TELEFUNKEN Semiconductors Wiper control for Intermittent and Wipe/ Wash Mode Description The U 842 B circuit is designed as an interval and wipe/ wash timer for automotive wiper control. The interval pause can be set in a range from 3 s to 11 s by
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88/540/EEC
91/690/EEC
TRANSISTOR nf 842
wiper motor
U842B
operation of wiper motor and relay
wipe wash
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SWITCH debouncing
Abstract: U842B wiper motor 47 k pot RREL 24 Relay
Text: U842B Wiper Control for Intermittent and Wipe/ Wash Mode Description The U842B circuit is designed as an interval and wipe/ wash timer for automotive wiper control. The interval pause can be set in a range from 3 s to 11 s by an external 1-kW potentiometer. Wipe/wash mode has
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U842B
U842B
D-74025
26-Mar-01
SWITCH debouncing
wiper motor
47 k pot
RREL 24 Relay
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Untitled
Abstract: No abstract text available
Text: MITSUMI Lithium-Ion Battery Charge Control 1 cell MM1333 Lithium-Ion Battery Charge Control (1 cell) Monolithic IC MM1333 Outline This IC was developed for lithium-ion battery charge control. It controls charging with an external PNP power transistor or p-MOSFET. It is used only for 1-cell batteries and provides a high-precision charge voltage.
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MM1333
MM1332
MM1333
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wiper motor
Abstract: T4D DIODE U842B v6 4d zener diode wipe wash
Text: U842B Wiper Control for Intermittent and Wipe/ Wash Mode Description The U842B circuit is designed as an interval and wipe/ wash timer for automotive wiper control. The interval pause can be set in a range from 3 s to 11 s by an external 1-kW potentiometer. Wipe/wash mode has
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U842B
U842B
D-74025
03-Feb-97
wiper motor
T4D DIODE
v6 4d zener diode
wipe wash
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O10003
Abstract: cr 406 transistor CD 4050 pin diagram
Text: MâïSUMÎ Lithium Ion Battery Charging one cell MM1333 Monolithic IC MM1333 This IC was developed for use in charging lithium ion batteries. A power transistor or P-MOS FET is mounted externally to control charging. This IC is for use with a single cell only, and provides precise control of the
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OCR Scan
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MM1333
MM1332,
100mV
O10003
cr 406 transistor
CD 4050 pin diagram
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h bridge irfz44 mosfet
Abstract: thermostat pw ramp generator LT11581 cmos 555 Airpax motor
Text: L in Ç A B s i TECHNOLOGY LT1158 Half Bridge N -C hannel Power MOSFET Driver F€OTUR€S DCSCRIPTIOn • Drives Gate of Top Side MOSFET Above V+ ■ Operates at Supply Voltages from 5V to 30V ■ 150ns Transition Times Driving 3000pF ■ Over 500mA Peak Driver Current
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LT1158
h bridge irfz44 mosfet
thermostat pw
ramp generator
LT11581
cmos 555
Airpax motor
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Untitled
Abstract: No abstract text available
Text: r r w m _ TECHNOLOGY H a lf B rid g e N -C h a n n e l Pow er MOSFET Driver FCflTURCS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ A single input pin on the LT1158 synchronously controls two N-channel power MOSFETs in a totem pole configura
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LT1158
150ns
3000pF
500mA
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