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    DIODE TI125 Search Results

    DIODE TI125 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE TI125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30S3

    Abstract: CT03 M106 T151 SIP11 msje
    Text: 1 D I 3 O O Z - 1 O O 3 0 0 A ✓< 7 - W Jfé T fü POWER TRANSISTOR MODULE * « •$$:§: : Features • ¡S R / E , ■',6 , 16 J :i High Voltage r 0 7 ij l) ' s ÿ ÿ ' f $■— K rt Including Free W heeling Diode • ASO A '7 £ l' Excellent Safe Operating Area


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    PDF 19S24 95t/R89 Shl50 30S3 CT03 M106 T151 SIP11 msje

    STPS3045CM

    Abstract: No abstract text available
    Text: f i z z SG S -TH O M SO N ^ 7 # *l m [l T ri!a ® « S STPS3045CM _ POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS 2x15 A If (a v V rrm 45 V Vf 0.57 V FEATURES AND BENEFITS • ■ . ■ ■ VERY SMALL CONDUCTION LOSSES


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    PDF STPS3045CM 0E-05 Ti-125 00b0434 STPS3045CM

    KC224575

    Abstract: No abstract text available
    Text: POIilEREX INC 3TE ]> • 72T4bSl 0004334 XWEHEX _ Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 4 HPRX KC224575 ' Common Emitter


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    PDF 72T4bSl BP107, KC224575 Amperes/600 KC224575

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30CY-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


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    PDF QM30CY-H 30CY-H E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


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    PDF QM30HA-H E80276 E80271

    transistor eb 2030

    Abstract: 300V1 diode ti125
    Text: M ITSUBISHI TRAN SISTO R M ODULES f ! QM300HA-HB ! H IG H P O W E R S W IT C H IN G U S E f IN SU LA TED T Y P E { i QM300HA-HB • Ic • V cex • h FE Collector current. Collector-emitter voltage. DC current gain.


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    PDF QM300HA-HB E80276 E80271 300V1 transistor eb 2030 diode ti125

    QM10TE-HB

    Abstract: bup transistor bvp DIODE QM10 QM10T
    Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250


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    PDF QM10TE-HB E80276 E80271 QM10TE-HB bup transistor bvp DIODE QM10 QM10T

    D3953

    Abstract: RS 608G AD2033 ad2027 D7507 cmos cookbook TIC04 National Semiconductor Linear Data Book D7522 Model 289J
    Text: A N A LO G D E V IC E S DATAACQUISITION DATABOOK 1982 VOLUME II MODULES-SUBSYSTEMS General Information 1 Comprehensive Index to Both Volumes 2 Ordering Guide 3 am Operational Amplifiers 4 Isolation Amplifiers 5 Analog Multipliers/Dividers 6 RMS-to-DC Converters


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