Untitled
Abstract: No abstract text available
Text: TCW TriBiner Series: Triple Wavelength Instrument Laser 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com • Wavelengths: 650nm, 850nm, 1310nm, and 1550nm • High Peak Optical Power • Includes 650nm Red Laser for Fault Finding
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650nm,
850nm,
1310nm,
1550nm
650nm
850nm
1550nm
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PW610
Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Text: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,
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2SJ324
IEI-1209)
PW610
TEA1034
2SK 246 transistor
alps ALP
Q8060
pw410
2SK 2462 transistor
nec Semiconductors Selection Guide
X-2462
LF 20v0
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MT3S106
Abstract: 1SS417CT TAH8 TAH8N401K 2SA2154CT 1SS361CT 1SS387CT TPD4113AK TPD4113K sine wave Control IC
Text: C O N T E N T S New Products TOSHIBA SEMICONDUCTOR BULLETIN EYE FEBRUARY 2005 2 VOLUME 151 Single-chip Inverter ICs .2 2-bit Dual Supply Unidirectional Level Shifter ICs .2 Lead-Frame-Chip-Scale-Package .3
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TPD4113K/TPD4113AK
TPD4113K
HZIP23
MT3S106
1SS417CT
TAH8
TAH8N401K
2SA2154CT
1SS361CT
1SS387CT
TPD4113AK
sine wave Control IC
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Untitled
Abstract: No abstract text available
Text: SK45GB063 C- R PO S$@ 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT T$LA CU R PO S$ E$ CU R XPO S$ E$¥] MWW T YO Z C- R [W S$ NW Z XWW Z ^ PW T CU R XPO S$ XW b- C- R PO S$ Od Z C- R [W S$ N[ Z E$¥] R P : E$0%& *'-) T$$ R NWW T_ TFL ` PW T_
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SK45GB063
SK45GAL063
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Untitled
Abstract: No abstract text available
Text: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip PIN CONFIGURATIONS TOP VIEW VCC2 1 8 VCC1 X1 2 7 SCLK X2 3 6 I/O GND 4 5 CE DS1302 Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100
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DS1302
300nA
DS1202
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Untitled
Abstract: No abstract text available
Text: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip FEATURES PIN CONFIGURATIONS VCC2 1 X1 2 X2 3 GND 4 DS1302 TOP VIEW 8 VCC1 7 SCLK 6 I/O 5 CE DIP 300 mils VCC2 1 X1 2 X2 3 GND 4 DS1302 Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the
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DS1302
300nA
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ds1302 circuit
Abstract: DS1202 DS1302 DS1302N DS1302S DS1302SN DS1302Z DS1302ZN *1302ZN ds1302 circuit real time clock Register definition
Text: DS1302 Trickle-Charge Timekeeping Chip www.maxim-ic.com FEATURES PIN CONFIGURATIONS Real-Time Clock Counts Seconds, Minutes, Hours, Date of the Month, Month, Day of the Week, and Year with Leap-Year Compensation Valid Up to 2100 31 x 8 Battery-Backed General-Purpose RAM
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DS1302
300nA
DS1202
ds1302 circuit
DS1302
DS1302N
DS1302S
DS1302SN
DS1302Z
DS1302ZN
*1302ZN
ds1302 circuit real time clock Register definition
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Untitled
Abstract: No abstract text available
Text: LE AVAILAB DS1302 Trickle-Charge Timekeeping Chip ORDERING INFORMATION PART DS1302+ DS1302N+ DS1302S+ DS1302SN+ DS1302Z+ DS1302ZN+ TEMP RANGE 0°C to +70°C Functional Diagrams -40°C to +85°C 0°C to +70°C -40°C to +85°C 0°C to +70°C -40°C to +85°C
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DS1302
DS1302+
DS1302N+
DS1302S+
DS1302SN+
DS1302Z+
DS1302ZN+
300nA
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Super Capacitor Charger
Abstract: 68HC05C4 68HC11A8 DS1306 DS1306E DS1306EN DS1306N
Text: DS1306 Serial Alarm Real-Time Clock www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT Real-time clock RTC counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap-year compensation valid up to 2100
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DS1306
96-byte,
768kHz
DS1306
20-PIN
Super Capacitor Charger
68HC05C4
68HC11A8
DS1306E
DS1306EN
DS1306N
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68HC05C4
Abstract: 68HC11A8 DS1306 DS1306E DS1306EN DS1306N
Text: DS1306 Serial Alarm Real-Time Clock www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT Real-time clock RTC counts seconds, minutes, hours, date of the month, month, day of the week, and year with leap-year compensation valid up to 2100
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DS1306
96-byte,
768kHz
DS1306
20-PIN
68HC05C4
68HC11A8
DS1306E
DS1306EN
DS1306N
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Eupec BSM
Abstract: BSM50GP60 eupec
Text: eupec Technische Information / Technical Information BSM50GP60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö ch stzu lässig e Werte / Maximum rated valu es Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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BSM50GP60
50GP60
Eupec BSM
BSM50GP60
eupec
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Transistor GE 67
Abstract: No abstract text available
Text: eupec Technische Inform ation / Technical Inform ation H i— B S M 15G P 60 vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties Höchstzulässige W erte / Maximum rated values Diode Gleichrichter/ Diode Rectifier P eriodische Rückw. S pitzensperrspannung
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BSM15GP60
Transistor GE 67
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BSM30GP60 INVERTER CIRCUIT
Abstract: BSM30GP60
Text: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier
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BSM30GP60
BSM30GP60 INVERTER CIRCUIT
BSM30GP60
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT 0220G SG30TC 12M Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 30A 4.5 Feature ' Tj=175°C ' Full Molded 1Low Ir=40|jA 1Resistance for thermal run-away > Tj=175°C >37JLÆ-JL/ K » Ir=40|j A
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SG30TC
0220G
SG30TC12M
50IIz
J533-1
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Untitled
Abstract: No abstract text available
Text: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.
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H11B1
H11B2
H11B3
H1181
H11B3
E90700
ST1603A
H11B1)
H11B2)
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 10A/30V FCQ10A03L FEA TU RES o Similar to TO-220AB Case o Fully Molded Isolation o Extremely Low Forward Voltage Drop oD ual Diodes—Cathode Common oL ow Power Loss, High Efficiency o High Surge Capability o Wire-bonded technology MAXIMUM RATINGS
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0A/30V
FCQ10A03L
O-220AB
FCQ10A03L
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CW laser diode
Abstract: LASER RANGE FINDER CW Laser L7650 a355
Text: HAM AM ATSU preliminary data 850nm C W Laser Diode L7650 • A p plicatio n s Range Finder Laser Beam Printer ■ A B S O L U T E MAXIMUM RATINGS Tc=25°C Characteristics Output Power Reverse Voltage Operating Temperature Storage Temperature Sym bols Po
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850nm
L7650
L7650
CW laser diode
LASER RANGE FINDER
CW Laser
a355
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a7045
Abstract: No abstract text available
Text: MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode a t E-C Lead Formed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1 “ Suffix) ABSOLUTE MAXIMUM RATINGS
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MJD200
a7045
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06io1
Abstract: MCD132-16101 MCD72-12I08B MCD72-04IO8B MCD95-04IO8B MCD95-04 MCD95-12I08B 12io1 MCD95-16I08B MCD250-08IO1
Text: Thyristor / Diode Modules 'TAV = 27-320 A Type *TFIMS *18« A 45°C 10 ms A E 72 873 M MCD26-16IOBB • MCD26-14io8B MC026-12loBB • MCD26-06io8B • MCD26-04io8B MCD44-18lo8B MCD44-16io8B • MCD44-14Ì08B MCD44-12Ì08B MCD44-08IO8B • MCD44-06ÌO8B • MCD44-04io8B
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O-240
MCD26-16IOBB
MCD26-14io8B
MC026-12loBB
MCD26-06io8B
MCD26-04io8B
MCD44-18lo8B
MCD44-16io8B
MCD44-14
MCD44-12
06io1
MCD132-16101
MCD72-12I08B
MCD72-04IO8B
MCD95-04IO8B
MCD95-04
MCD95-12I08B
12io1
MCD95-16I08B
MCD250-08IO1
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE Ö1E Optoelectronic s p ec ific atio n s_ 19872 T - 4 I - S 7 H A RR IS S E M I C O N D SECTOR 37E 5 B 4 3 G 2 27 1 0 G 5 7 3 3 4 BHAS Photon Coupled Isolator MCS21, MCS2401 GaAs In frare d Em itting Diode & Light A ctivated SCR
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MCS21,
MCS2401
MCS21
MCS2401
E51868
92CS-42662
92CS-429S1
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2500U
Abstract: No abstract text available
Text: ramm MVIFW10P SOP Type Part No. MOL01 Device Voc (V) (A) Pd (mW) 1. 2. 3, 4 6 0± 1 0 2 eoo Diode G , 1000~ Resistance Value Vf (V) lo (A) Vf (V) If (A) 5 1 ~ 1.5 1 R i (O ) 680 R 2/ R 1 14.7 #Product Designation • When ordering, specify the type. • Check each code against the tables shown below.
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MVIFW10P
MOL01
2500U
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d2p03
Abstract: No abstract text available
Text: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MM DF2P03HD Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors M otorola Preferred Device MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High Cell D ensity H D TM O S process.
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DF2P03HD
DF2P03HD
d2p03
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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30 pin SIP dram memory
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR FEATURES DS2219 Nonvolatile DRAM Stik 1M x 9 PIN ASSIGNMENT • Maintains data in the absence of system power o • Compatible with existing DRAM SIMM applications • Normal operating mode completely unaffected • Nonvolatile circuitry transparent and independent
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30-position
10-volt
1024K
DS2219
30-Pin
DS2219
30 pin SIP dram memory
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