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    DIODE SS24 Search Results

    DIODE SS24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SS24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


    Original     		PDF CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    SS24 DIODE schottky

    Abstract: ss24 diode diode Schottky Schottky Diode 40V 2A SS210 SS24 SS26 diode ss24 diode schottky 2a
    Text: Diode, Schottky Features: • • • • • • • • For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial construction.


    Original     		PDF SMB/DO-214AA RS-481. SS24 DIODE schottky ss24 diode diode Schottky Schottky Diode 40V 2A SS210 SS24 SS26 diode ss24 diode schottky 2a

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time


    Original     		PDF DF005S C3B03

    br 123 s

    Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
    Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital


    Original     		PDF O-252 O-277A O-277B MA/DO-214AC DO-214A MC/DO-214AB br 123 s BAS54A BR3005 MS15N50 sod-23 BAS54C

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    LL5817

    Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
    Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time


    Original     		PDF C3B03 LL5817 smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    DIODE SOT-23 PACKAGE

    Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


    Original     		PDF OT-23 LL4148 DL4148 500mW LL4448 DL4448 OT-23 Part54G DBS155G DIODE SOT-23 PACKAGE dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402

    T161-160

    Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.


    Original     		PDF ISO9001 to300 SF15CL 500Aelement T161-160 SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100

    Untitled

    Abstract: No abstract text available
    Text: SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak


    Original     		PDF SS210 SMB/DO-214AA, MIL-STD-750,

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    transistor 2N5952

    Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
    Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SS2406 Hall Latch - High Sensitivity Packages Features and Benefits – 3 pin SOT23 suffix SO – – – – – – – – 3 pin SIP (suffix UA) Functional Block Diagram Application Examples VDD Voltage Regulator Wide operating voltage range from 2.5V to


    Original     		PDF SS2406 OT-23 SS2406ESOT OT-23 SS2406EUA SS2406KSOT SS2406KUA SS2406LSOT

    Untitled

    Abstract: No abstract text available
    Text: SS2413 Hall Latch - High Sensitivity Features and Benefits Application Examples – – – – – – – – – – – Wide operating voltage range from 2.5V to 24V High magnetic sensitivity – Multi-purpose CMOS technology Chopper-stabilized amplifier stage


    Original     		PDF SS2413 OT-23 SS2413ESOT OT-23 SS2413EUA SS2413KSOT SS2413KUA SS2413LSOT

    Untitled

    Abstract: No abstract text available
    Text: SS22S-M3, SS23S-M3, SS24S-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability


    Original     		PDF SS22S-M3, SS23S-M3, SS24S-M3 J-STD-020, DO-214AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SS22, SS23, SS24, SS25, SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original     		PDF DO-214AA J-STD-020, AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode ss24

    Abstract: No abstract text available
    Text: SS22, SS23, SS24, SS25, SS26 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original     		PDF J-STD-020, DO-214AA AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 diode ss24

    Untitled

    Abstract: No abstract text available
    Text: SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability


    Original     		PDF SS22S, SS23S, SS24S J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SS22S, SS23S, SS24S www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • High surge capability


    Original     		PDF SS22S, SS23S, SS24S J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    common anode schottky to220

    Abstract: 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky
    Text: Discrete Schottky Products VRRM IF AV VFM IRM Maximum Average Maximum Maximum Instantaneous IFSM (A) Repetitive Rectified Instantaneous Reverse Current Reverse Forward Forward ROJA (Cel/W) Voltage (V) Current (A) Voltage (V) @VR (V) (uA) Termal Resistance


    Original     		PDF 1N5820 1N5821 1N5822 SB3100 SB330 SB340 MBR4035PT MBR4045PT MBR4050PT MBR4060PT common anode schottky to220 1N5822 SS34 Schottky diode TO220 SS14 DIODE schottky Common Anode Schottky Rectifier SS24 DIODE schottky SS14 SOD123 diode sb340 FYPF2004DN 247 DIODE schottky

    3 watt 70v zener diode

    Abstract: inkjet print head interface K784P
    Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP


    Original     		PDF 00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P