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    DIODE SS10 Search Results

    DIODE SS10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SS10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCH3339

    Abstract: MCH5823 SS10015M
    Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)


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    PDF MCH5823 ENN7757 MCH3339) SS10015M) MCH3339 MCH5823 SS10015M

    D1004

    Abstract: MCH3405 MCH5811 SS10015M
    Text: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)


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    PDF MCH5811 ENN8059 MCH3405) SS10015M) D1004 MCH3405 MCH5811 SS10015M

    ss1001

    Abstract: MCH3445 MCH5812 SS10015M
    Text: MCH5812 Ordering number : ENN7998 MCH5812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3445 and a schottky barrier diode (SS10015M)


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    PDF MCH5812 ENN7998 MCH3445) SS10015M) ss1001 MCH3445 MCH5812 SS10015M

    86886

    Abstract: diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001
    Text: CPH5846 Ordering number : EN8688 SANYO Semiconductors DATA SHEET CPH5846 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET MCH3309 and a Schottky Barrier Diode (SS10015M)


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    PDF CPH5846 EN8688 MCH3309) SS10015M) 86886 diode sy 710 mch5846 CPH5846 MCH3309 SS10015M ss-1001

    SS1001

    Abstract: ENA0781A MCH5837 SS10015M
    Text: MCH5837 Ordering number : ENA0781A SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


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    PDF MCH5837 ENA0781A SS10015M) A0781-6/6 SS1001 ENA0781A MCH5837 SS10015M

    SS1001

    Abstract: MCH5837 mosfet yb SS10015M TA72
    Text: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


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    PDF MCH5837 ENA0781 SS10015M) A0781-6/6 SS1001 MCH5837 mosfet yb SS10015M TA72

    SS1001

    Abstract: MCH3307 MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780A SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


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    PDF MCH5836 ENA0780A MCH3307) SS10015M) PW10s, A0780-6/6 SS1001 MCH3307 MCH5836 SS10015M

    MCH3307

    Abstract: MCH5836 SS10015M
    Text: MCH5836 Ordering number : ENA0780 SANYO Semiconductors DATA SHEET MCH5836 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-channel silicon MOSFET MCH3307 and a schottky barrier diode (SS10015M)


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    PDF MCH5836 ENA0780 MCH3307) SS10015M) A0780-6/6 MCH3307 MCH5836 SS10015M

    SS10015M

    Abstract: VEC2820
    Text: VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode SS10015M contained in one


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    PDF VEC2820 ENA0849 SS10015M) A0849-6/6 SS10015M VEC2820

    Untitled

    Abstract: No abstract text available
    Text: CPH5848 Ordering number : EN8690 SANYO Semiconductors DATA SHEET CPH5848 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Applications • DC / DC converters. Features • Composite type with a P-Channel Sillicon MOSFET MCH3306 and a Schottky Barrier Diode (SS10015M)


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    PDF EN8690 CPH5848 MCH3306) SS10015M)

    PV-Module

    Abstract: No abstract text available
    Text: PV-Module Table of Contents Concentrators, Bypass Diode. 3 Crystalline, Junction Box. 4


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    PDF 1N5408 GP30M DO-201AD P600M O-277A PV-Module

    SS1003M3

    Abstract: No abstract text available
    Text: SS1003M3 Ordering number : ENN8372 SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=0.35mA, VF max=0.43V).


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    PDF SS1003M3 ENN8372 SS1003M3

    Untitled

    Abstract: No abstract text available
    Text: SS10015M Ordering number : ENN7979 Schottky Barrier Diode SS10015M 15V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Low forward voltage (IF=0.3A, VF max=0.32V) (IF=0.5A, VF max=0.35V).


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    PDF SS10015M ENN7979

    Untitled

    Abstract: No abstract text available
    Text: SS1030 SCHOTTKY BARRIER DIODE • General rectification • Small power mold type PMDU • Low IR • High reliability • Silicon epitaxial planar APPLICATIONS ABSOLUTE MAXIMUM RATINGS ( TA = 25OC ) PARAMETER SYMBOL LIMITS Reverse Voltage (repetitive peak)


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    PDF SS1030

    MARKING G5

    Abstract: SS1040 SS1040-T1 schottky diode sod-123 marking code 120
    Text: SS1040 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    PDF SS1040 OD-123 OD-123, MIL-STD-202, MARKING G5 SS1040 SS1040-T1 schottky diode sod-123 marking code 120

    Untitled

    Abstract: No abstract text available
    Text: SS1020 / SS1040 WTE POWER SEMICONDUCTORS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    PDF SS1020 SS1040 OD-123 OD-123, MIL-STD-202, SS1040

    SS1003M3

    Abstract: No abstract text available
    Text: SS1003M3 Ordering number : EN8372A SANYO Semiconductors DATA SHEET SS1003M3 Schottky Barrier Diode 30V, 1.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=1.0A, VF max=0.43V).


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    PDF SS1003M3 EN8372A SS1003M3

    Untitled

    Abstract: No abstract text available
    Text: SS1040 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Turn-on Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    PDF SS1040 OD-123 OD-123, MIL-STD-202,

    "Marking SC"

    Abstract: SS1003M
    Text: SS1003M Ordering number : ENN8347 SS1003M Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small Switching noise. Low forward voltage(IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).


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    PDF SS1003M ENN8347 500mA, "Marking SC" SS1003M

    diode sod-123 marking code 120

    Abstract: No abstract text available
    Text: SS1040 WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Low Turn-on Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    PDF SS1040 OD-123 OD-123, MIL-STD-202, diode sod-123 marking code 120

    SOD-123FL

    Abstract: marking code SOD-123fl G10 5410 SS1020FL-T1 SS1030FL SS1030FL-T1 SS1040FL SS1040FL-T1 SS1060FL SS1020FL
    Text: SS1020FL SS10100FL WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    PDF SS1020FL SS10100FL OD-123FL OD-123FL, MIL-STD-202, SS1020FL SS1030FL SS1040FL SS1060FL SS10100FL SOD-123FL marking code SOD-123fl G10 5410 SS1020FL-T1 SS1030FL-T1 SS1040FL-T1

    marking DF

    Abstract: ECSP1608-4 N3004 SS1003EJ
    Text: SS1003EJ Ordering number : ENN8157 SS1003EJ Schottky Barrier Diode 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise. Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).


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    PDF SS1003EJ ENN8157 500mA, marking DF ECSP1608-4 N3004 SS1003EJ

    Untitled

    Abstract: No abstract text available
    Text: SS10150FL SS10200FL 1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application


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    PDF SS10150FL SS10200FL OD-123FL OD-123FL, MIL-STD-202,

    SS1040HE

    Abstract: SS1040HEWS J75 DIODE marking EV
    Text: SS1040HEWS SCHOTTKY BARRIER DIODE SOD-323HE Unit: inch mm FEATURES 0.107(2.70) • SOD-323HE low profile package 0.090(2.30) 0.077(1.95) • Low forward voltage drop, low reverse current 0.055(1.40) 0.004(0.10) 0.047(1.20) 0.030(0.75) 0.017(0.45) APPLICATIONS


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    PDF SS1040HEWS OD-323HE OD-323HE 2002/95/EC 2010-REV SS1040HE SS1040HEWS J75 DIODE marking EV