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    DIODE SG 47 Search Results

    DIODE SG 47 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SG 47 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking sg

    Abstract: diode SOD-323 SD107WS SG DIODE MARKING
    Text: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·


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    PDF OD-323 SD107WS OD-323 3000ms. 019REF 475REF marking sg diode SOD-323 SD107WS SG DIODE MARKING

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications


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    PDF OD-323 SD107WS OD-323 3000ms. 019REF 475REF

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 0.85 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications


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    PDF OD-323 SD107WS OD-323 100mA 3000ms.

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


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    PDF OD-323 OD-323 SD107WS 100mA

    48v 2500w

    Abstract: PD78F0511GA-8EU-A PD78F0511GA-8EU multi output switch mode transformer for stb FH02500
    Text: 48V 2500W POWER SUPPLY SPECIFICATION REVISION HISTORY REV. EC NO. A 0 0 DESCRIPTION INITIAL RELEASE RESP.ENG DATE NORI MIURA 2/5/2010 Hot-Swap / Redundant Front End Power Supply 2500 WATTS @ 200-240VAC, 1200W@100-120VAC, 47-63 HZ OUTPUT: +48V @ 52A High Line , 25A (Low Line) , +12.5 V STB @ 2.0 A


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    PDF 200-240VAC, 100-120VAC, FH02500 28w/in3 FH02500 IEC60950 IEC60950 48v 2500w PD78F0511GA-8EU-A PD78F0511GA-8EU multi output switch mode transformer for stb

    BL0104-21-350

    Abstract: SG DIODE diode sr 60
    Text: 26mm LED LAMP CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0104-21-350 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made WATER PROOF PACKAGE WITH HOOD SUITABLE


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    PDF BL0104-21-350 DSAE5811 JAN/13/2005 BL0104-21-350 SG DIODE diode sr 60

    diode sg 08

    Abstract: BL0709-18-349 PB25
    Text: 28mmX28mm LED CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0709-18-349 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN PRELIMINARY SPEC Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made


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    PDF 28mmX28mm BL0709-18-349 DSAE5810 JAN/08/2005 diode sg 08 BL0709-18-349 PB25

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    Abstract: No abstract text available
    Text: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF 28mmX28mm BL0709-18-462 DSAK6604 NOV/17/2010

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    Abstract: No abstract text available
    Text: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF 28mmX28mm BL0709-18-462 hood10 DSAK6604 NOV/17/2010

    Untitled

    Abstract: No abstract text available
    Text: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF 28mmX28mm BL0709-18-462 hood10 DSAK6604 MAY/18/2010

    Untitled

    Abstract: No abstract text available
    Text: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.


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    PDF 28mmX28mm BL0709-18-462 DSAK6604 OCT/30/2012

    SG21 diode

    Abstract: SG18 diode diode SG19 SG14 diode diode SG15 PT6324-Q diode SG12 SG13 diode diode sg21 diode sg-42
    Text: Tel: 886-2-66296288 Fax: 886-2-29174598 URL: http://www.princeton.com.tw VFD Driver/Controller IC PT6324 DESCRIPTION PT6324 is a Vacuum Fluorescent Display VFD Controller driven on a 1/8 to 1/16 duty factor housed in 52-pin plastic QFP. 24 segment output lines, 16 grid output lines, one display memory, control circuit,


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    PDF PT6324 PT6324 52-pin SAMSUNG-KSR1105 HITACHI-HSM221C PT6324-Q SG21 diode SG18 diode diode SG19 SG14 diode diode SG15 PT6324-Q diode SG12 SG13 diode diode sg21 diode sg-42

    DC24V-48V

    Abstract: SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1
    Text: 1/8 001-02 / 20030510 / ea224_spb.fm Power Supplies DC Input Single Output, General-Purpose The S series SPB products are wide-input super-thin type (9mm max.) available for the 24V and 48V types. The super-thin and ultra-light design has been realized by means of a high-density


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    PDF SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 50MHz DC24V-48V SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1

    SPB12-R80

    Abstract: SPB05-2R0 SPB05-1R0 1R0 choke A224 SPB12-R40 SPB24-R20 diode sg 69
    Text: A224_SPB 1/8 TDK Switching Power Supply Super-thin type DC.24 to 48V wide input power supply S SERIES SPB [FEATURES] • Wide-input (DC.20 to 56V) super-thin type single-output power supply. • Plastic package, onboard type. • Ultra-light. • Input-output floating.


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    PDF SPB05-1R0 SPB12-R40 SPB24-R20 50MHz SPB12-R80 SPB05-2R0 SPB05-1R0 1R0 choke A224 SPB12-R40 SPB24-R20 diode sg 69

    Diode MARKING S37

    Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
    Text: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS


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    PDF LDP24AS Diode MARKING S37 transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623

    SGS50DA045D

    Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
    Text: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING


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    PDF G03Dhba T0-240) O-240) PC-029« SGS50DA045D SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D

    3015-6

    Abstract: 47B diode 74LS RCD16-47B S020 47B marking
    Text: I SGS-THOMSON RCD16-47B GilDlgtftiOtiLIgTOOKlKgi R-C-D TERM INATO R NETW ORKS T A R G E T S P E C IF IC A T IO N FEATURES □ Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot.


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    PDF RCD16-47B RCD16-47B 3015-6 47B diode 74LS S020 47B marking

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7 ^3*^537 / T T S G S -T H O M S O N * 7 # [ « ^ Q m i( g ™ iD ( g § Q03Ü023 Fg M ■ 'T - '¥ \ - \ '} > s TH0MS0N S G S P 4 7 1 S G S P 472 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on Id S G S P 4 71 10 0 V


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    PDF T-39-13 SGSP471 SGSP472

    IPI-41

    Abstract: TIP147 morocco diode sg 42
    Text: tipi 41 142 TIPI 46/1 47 S GS-THOMSON Kl g«LiM(S iO(gS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION • INTEGRATED ANTIPARALLEL


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    PDF TIP141, TIP142 TIP147 TIP141and O-218 TIP146 IPI-41 TIP147 morocco diode sg 42

    SEMIKRON SKIIP 20 NAB 12 T 17

    Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
    Text: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A


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    SP571

    Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
    Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


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    PDF SGSP47 /P472¿ SGSP571/F572| SP472 SP572 OT-93 SP471 SP571 T471/P472 SGSP57I/P572 diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472

    diode sg 64

    Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
    Text: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.


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    PDF SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A 500mA 14-PIN diode sg 64 SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J

    TH7982A

    Abstract: diode sg 27 diode sg 82 SH1 diode diode sg 28 ldcc THOMSON-CSF CCD sh3 1995
    Text: ' ì OS bf l TE 00DS34L. _ TH 7982A CORRELATED DOUBLE SAMPLING CCD SIGNAL PROCESSOR Pixel frequency : PIN IDENTIFICATION • 2- 20 MHz. Version B ■ 2 - 5 MHz. Version A Input voltage up to 2 V. LDCC 28 or PLCC 28 package. Compatible with pixel correction.


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    PDF 00DS34L. 02bfl72 7982AVWA 7982AVWB 7982ACFNA 7982ACFNB 0Ebfl72 R02bfl72 0Q023SD TH7982A diode sg 27 diode sg 82 SH1 diode diode sg 28 ldcc THOMSON-CSF CCD sh3 1995

    Untitled

    Abstract: No abstract text available
    Text: r s T ^7 S G S - T H O M S O N # ffifli g®@[iiL[i(Sir®@oaD(gi R C D 1 6 -4 7 B R-C-D TERMINATOR NETWORKS FEATURES O Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot. □ Monolithic device for greater reliability.


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    PDF RCD16-47B