Untitled
Abstract: No abstract text available
Text: 1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage
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1N6263WS
OD-323
OD-323
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marking CODE S2
Abstract: No abstract text available
Text: 1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Reverse Voltage
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1N6263WS
OD-323
OD-323
marking CODE S2
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Diode smd s6 95
Abstract: DIODE S4 66 smd diode S6 48 Diode smd s6 46 Diode smd s6 68 Diode smd s4 95 SMD MARKING g5 DIODE 542 SMD smd diode code g3 smd diode g6
Text: GWM 100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100
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100-01X1
160-0055X1
20081126c
Diode smd s6 95
DIODE S4 66
smd diode S6 48
Diode smd s6 46
Diode smd s6 68
Diode smd s4 95
SMD MARKING g5
DIODE 542 SMD
smd diode code g3
smd diode g6
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Untitled
Abstract: No abstract text available
Text: GWM 100-01X1 Three phase full Bridge VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100
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100-01X1
160-0055X1
20080527b
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Untitled
Abstract: No abstract text available
Text: GWM 100-01X1 Three phase full Bridge VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 100
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100-01X1
160-0055X1
20070831a
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smd diode code mj
Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Text: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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100-01X1
160-0055P3
20070706a
smd diode code mj
SMD marking code 542
smd diode code g6 9
GWM 100-01X1
smd diode code g4
smd marking BL
smd diode code s6
welding mosfet
smd diode g6 DIODE S4 39 smd diode
TR 505 diode
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B170G
Abstract: No abstract text available
Text: TDK-Lambda HK15A SPECIFICATIONS PA777-01-01C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Item Nominal Output Voltage Maximum Output Current Maximum Output Power Efficiency Typ Input Voltage Range Input Current (Typ) Inrush Current (Typ) Output Voltage Range
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HK15A
PA777-01-01C
UL60950-1,
100VAC
100-120VAC,
50/60Hz
132VAC
175VDC,
B170G
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DIODE T4
Abstract: DSBT2-S-DC12V DS2E-M-DC24V DIODE t3 DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V DSBT2-S-DC24V LR26550 DSBT2-S-DC5V
Text: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts
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E43149
LR26550
DIODE T4
DSBT2-S-DC12V
DS2E-M-DC24V
DIODE t3
DSBT2-M-2D-DC12V
DSBT2-M-2D-DC24V
DSBT2-S-DC24V
LR26550
DSBT2-S-DC5V
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DSBT2-S-DC12V
Abstract: DIODE T4 RELAY 1500 V LR26550 DSBT2-S-DC24V MBB relay RELAY DC12V DATA SHEET DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550
Text: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts
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E43149
LR26550
DSBT2-S-DC12V
DIODE T4
RELAY 1500 V LR26550
DSBT2-S-DC24V
MBB relay
RELAY DC12V DATA SHEET
DS2E-M-DC24V
DSBT2-M-2D-DC12V
DSBT2-M-2D-DC24V
LR26550
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Untitled
Abstract: No abstract text available
Text: 2SK3609-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series Outline Drawings mm 外形寸法図 OUT VIEW Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照
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2SK3609-01
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power supply 100v 30a schematic
Abstract: No abstract text available
Text: 2SK3647-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series FUJI POWER MOS FET OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照
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2SK3647-01
power supply 100v 30a schematic
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diode s4
Abstract: 70-01P2 S6 diode
Text: GWM 70-01P2 Advanced Technical Information VDSS = 100 V ID25 = 70 A Ω RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G5 S3 S5 Pins Gate G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin L- Applications
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70-01P2
diode s4
70-01P2
S6 diode
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DIODE marking S6 57
Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
DIODE marking S6 57
DIODE marking S4 57
smd diode code s1 96
GMM3x60-015X1
DIODE marking S6 96
smd diode .S6 22
smd diode S4 96
smd diode g6
Control of Starter-generator
S4 DIODE
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Untitled
Abstract: No abstract text available
Text: 2SK3613-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
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2SK3613-01
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Untitled
Abstract: No abstract text available
Text: 2SK3605-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照
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2SK3605-01
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2SK3593-01
Abstract: No abstract text available
Text: 2SK3593-01 FUJI POWER MOSFET FUJI POWER MOS FET MOSFET N-CHANNEL SILICON POWER Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照
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2SK3593-01
2SK3593-01
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Control of Starter-generator
Abstract: starter/generator
Text: GWM 70-01P2 Advanced Technical Information VDSS = 100 V ID25 = 70 A Ω RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package Pins Gate L+ G3 G5 S3 S5 G1 S1 L1 L2 L3 G4 G6 S4 S6 G2 S2 Pow s er Pin t L- Applications
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70-01P2
Control of Starter-generator
starter/generator
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C-123
Abstract: 2SK3589-01 n-channel, 75v, 50a
Text: 2SK3589-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照
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2SK3589-01
C-123
2SK3589-01
n-channel, 75v, 50a
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2sk3601
Abstract: 2SK3601-01
Text: 2SK3601-01 FUJI POWER MOSFET FUJI POWER MOS FET MOSFET N-CHANNEL SILICON POWER Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照
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2SK3601-01
2sk3601
2SK3601-01
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Diode smd s6 95
Abstract: DIODE marking S4 45 L3 code smd diode g6 smd diode S5 S3 marking DIODE Diode smd s6 68
Text: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications MOSFETs Conditions Maximum Ratings
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3x100-01X1
3x100-01X1
Diode smd s6 95
DIODE marking S4 45
L3 code
smd diode g6
smd diode S5
S3 marking DIODE
Diode smd s6 68
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Untitled
Abstract: No abstract text available
Text: FEA TU R ES • D C -4 5 0 MHz ■ 50£2 or75C2 Terminations ■ 20 Watts CW : ;, p j ■ SMA Connectors ■ Diode Suppression of Switching Transients J3 J2 .xx = .02 .xx x = .010 GUARANTEED PERFORMANCE Œ s sS - S-T W > -J — S2 MIN PARAMETER TYPICAL PERFORMANCE
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OCR Scan
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PDF
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or75C2
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MCS2400
Abstract: MSC2400 80110h
Text: G E SOLI» STATE 01 DE Optoelectronic Specifications. Jj 3fl7SQfll □01cIñ7a nr "T-4Í-S7 Photon Coupled Isolator MCS2, MCS2400 GaAs Infrared Em itting Diode & Light Activated SCR IN C H E S M IL L IM E T E R S T he G E Solid State M C S2 and M CS2400 consist o f a gallium
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OCR Scan
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3fl75GfllDDlTfl7Gl~
T-41-S7
MCS2400
MCS2400
E51868
100/isec
33mW/Â
MSC2400
80110h
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S2L3
Abstract: No abstract text available
Text: ft* * SP2T SWITCHES sjonffok Components The S2 series of single pole, two throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible
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10MHz
18GHz
-18VDC
MIL-STD-883
26GHz
/-12V,
/-15V
S2L3
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HK15A-28
Abstract: CSA23-1 pA777 HK15A-12 HK15A-15 HK15A-24 HK15A-5 KIV-77 OPERATE MANUAL
Text: DENSEI-LAMBDA HK15A PA777-01-01 A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Item Nominal Output Voltage Maximum Output Current Maximum Oulpul Power Efficiency Typ Input Voltage Range Input Current (Typ) Inrush Current (Typ) Output Voltage Range
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OCR Scan
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PDF
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HK15A
PA777-01-01
HK15A-5
HK15A-12
HK15A-15
HK15A-24
85-132VAC
47-440Hz)
110-175VDC
100VAC
HK15A-28
CSA23-1
pA777
HK15A-24
KIV-77 OPERATE MANUAL
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