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    DIODE RU 4B Search Results

    DIODE RU 4B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE RU 4B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SE135N

    Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
    Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE135N SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


    Original     		PDF

    fgt313

    Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
    Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156


    Original     		PDF 2SA1186 2SC4024 2SA1215 2SC4131 2SA1216 2SC4138 100VAC 2SA1294 2SC4140 fgt313 transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		PDF TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent

    fn651

    Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
    Text: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102


    Original     		PDF 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 fn651 CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343

    HVR-1X 7 diode

    Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
    Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01EC0 TM1061S-L TM1061S-R TM1241S-L TM1241S-R TM1261S-L TM1261S-R TM1641P-L TM1641S-L TM1661P-L HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159

    Untitled

    Abstract: No abstract text available
    Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)


    Original     		PDF AG01A AG01Y AG01Z FMB-29 FMB-29L FMB-32 EL02Z SFPB-66 SFPB-69 SFPB-72

    B 2306 BARRIER RECTIFIER

    Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
    Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41


    Original     		PDF VR-60SS VR-61SS B 2306 BARRIER RECTIFIER diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU

    diode 8603

    Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
    Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41


    Original     		PDF VR-60SS VR-61SS diode 8603 SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking

    2am smd transistor

    Abstract: transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a
    Text: High-side Power Switch with Diagnostic Function SI-5155S External Dimensions unit: mm ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use ● Allows direct driving using LS-TTL and C-MOS logic levels


    Original     		PDF SI-5155S O-220 Rati03S SPX-62S SI-3011S SPX-G32S SI-3101S SPZ-G36 SI-3102S SSB-14 2am smd transistor transistor smd 4z HALL SENSOR A 22L 78Mos EL 14v 4c 78 MOS GENERAL SEMICONDUCTOR MARKING mJ SMA ED smd transistor marking 12W TRANSISTOR SMD MARKING CODE 1P TRANSISTOR SMD MARK CODE 7a

    MN638S

    Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein


    Original     		PDF infringement0718 H1-C01EC0-0110015TA MN638S STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M

    Untitled

    Abstract: No abstract text available
    Text: 1N 4896 th ru 1N 4915A / Microsemi Corp. The diode experts SC O TTSD A LE , A Z SANTA A N A , CA F o r m o re in fo rm a tio n call: 602 941-6300 12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER R EFER EN C E DIODES FEATURES • ZENER VOLTAGE 1 2.8V . TEM PERATURE COEFFICIENT RANGE: 0.01 % / ° C to 0.001 % / ° C


    OCR Scan     		PDF RH4896A IN4896A.

    1N4896

    Abstract: 1N4896A 1N4897 1N4897A 1N4898 1N4898A 1N4899 1N4899A 1N4915A 0107MA
    Text: 1N 4896 th ru 1N 4915A / Microsemi Corp. The diode experts SC O TTSD A LE , A Z SANTA A N A , CA F o r m o re in fo rm a tio n call: 602 941-6300 12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER R EFER EN C E DIODES FEATURES • ZENER VOLTAGE 1 2.8V . TEM PERATURE COEFFICIENT RANGE: 0.01 % / ° C to 0.001 % / ° C


    OCR Scan     		PDF 1N4896 1N4915A 94I-6300 RH4896A IN4896A. 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A 1N4899 1N4899A 1N4915A 0107MA

    KSQ30A04

    Abstract: KSQ30A04B
    Text: SCHOTTKY BARRIER DIODE K S Q 3 0 A0 4 K SQ 3 0 A0 4B 3o a / 4o v FEATURES I C tii /OHI 7 Ri I _ o S im ila r to TO-247AC TO-3P Case o L o w F o rw a rd V o ltag e D rop o Low P o w er Loss, H igh Efficiency O H igh S urge C u rre n t C apability 0 40 V o lts th ru 60 V o lts T y p es


    OCR Scan     		PDF KSQ30A04 KSQ30A04B O-247AC KSQ30A. 44-tT 20MnM 00D1BC14 KSQ30A04B

    SE110N

    Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
    Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)


    OCR Scan     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode

    2SK1511

    Abstract: SC-65
    Text: COLLMER SEMICONDUCTOR INC |l. 2 S K 1 5 1 1 Scope 4flE D • 22307*12 D0G1B07 This sp e c ifie s F u ji power MOSFET 2 S K 1 5 1 1 t.4b D Outline I Construction S ) Appiication Œ) Outview N-channel enhanceaent node power MOSFET for switching T0-3P MK5C25623)


    OCR Scan     		PDF D0G1B07 2SK1511 MK5C25623) 2SK1511 SC-65

    A2 diode

    Abstract: 1N414S
    Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G


    OCR Scan     		PDF 00Q13QÔ DO-35 1N914 1N414S 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 A2 diode

    Untitled

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT501OJVR 500V 44A 0.1000 POWER MOS V Power M O S V is a new generation of high voltage N-Channel enhancement mode power M O SFETs. This new technology minimizes the JF E T effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT501OJVR OT-227 APT5010JVR E145592

    ST1241

    Abstract: ST1244 ST1240 H23L1 ST1242 27qf
    Text: C s O OPTOELECTRnSiCS . PLASTIC SIDELOOKER PAIR _ . . H23L1 PACKAGE DIMENSIONS SYMBOL Í Í * .JZ L " A B B, 4b b, D E E, e SECTION X-X LEAD PROFILE «i G L L, R S I F -* |s ay ST1614 PACKAGE OUTLINE -01 i GROUND r MILLIMETERS MIN. MAX. 5.59 j 5.80 1.78 NOM.


    OCR Scan     		PDF H23L1 ST1614 STi613 V00-8V 270il ST1241 ST1242 ST1245 ST1244 ST1240 27qf

    diode T-71

    Abstract: fuji igbt 300v 150D 01AIL VI2000
    Text: 6-Pack IGBT 600 V 15 A FUJI S ïU M s ïn M IÊ IGBT MODULE Sinqle-in-Line • Outline Drawing ■ Features • Square RBSOA • Low Saturation Voltage • Improved F W D Characteristic • M inimized Internal Stray Inductance ■ Applications • High


    OCR Scan     		PDF XXG5-060: D-60528 diode T-71 fuji igbt 300v 150D 01AIL VI2000