VARTA 170 dk
Abstract: energy meter circuit diagram em 301 l and t make CR-P2 varta VARTA 250 dk CH-8952 VARTA crp2 lithium 6 v varta v 60 r diode catalogue VARTA 60 dk TAG 8952
Text: Varta Micro Batteries Pr i m a r y L i t h i u m C e l l s Primary Lithium Cells Sales Program and Technical Handbook Contents 1. General Information, 3 - 8 1.2 Constructions of Lithium Cells, 4 - 5 1.3 Characteristics and Applications, 6 1.4 Applications for Primary Lithium Cells, 7
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E-08034
F-92403
P-1100
VARTA 170 dk
energy meter circuit diagram em 301 l and t make
CR-P2 varta
VARTA 250 dk
CH-8952
VARTA crp2 lithium 6 v
varta v 60 r
diode catalogue
VARTA 60 dk
TAG 8952
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LTA 702 N
Abstract: LTA 702 1A0500
Text: w w w .h a m lin . co m H E3600 M in ia tu re S .I.L .R e la y F e a tu re s a n d B e n e fits F e a tu re s B e n e fits A p p lic a tio n s • • • • Te le c o m s • In stru m e n ta tio n • Pro c e ss • A u to m a tic Te st Eq u ip m e n t
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Diode smd f6
Abstract: TZA10 SMD Diode 2FS 7812 3 phase 2 speed soft start motor control diagram industrial servo drivers operation manuals SMD transistor SF2 CD10 QFP64 SAA7325
Text: INTEGRATED CIRCUITS DATA SHEET SAA7325 Digital servo processor and Compact Disc decoder with integrated DAC CD10 Product specification File under Integrated Circuits, IC01 1999 Jun 17 Philips Semiconductors Product specification Digital servo processor and Compact Disc
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SAA7325
545002/01/pp68
Diode smd f6
TZA10
SMD Diode 2FS
7812
3 phase 2 speed soft start motor control diagram
industrial servo drivers operation manuals
SMD transistor SF2
CD10
QFP64
SAA7325
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diode RP 1040
Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)
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1000A2
2500A2
CB-3191
diode RP 1040
DRA 402 DIODE
1N SERIES DIODE
DRA402
DRA 402
diode RP 4040
diode 1N 3768 r
RP8040R
fr 608 diode
DIODE REDRESSEMENT 4040
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fr 608 diode
Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Text: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)
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1000A2
2500A2
6xCB80
6xP150
6xTNF150
fr 608 diode
DIODE REDRESSEMENT
1N SERIES DIODE
B-408 diode
ku 611
KU 612
diode 736
diode RP 4040
fr 608
KU1506
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Untitled
Abstract: No abstract text available
Text: t Q V NS e* mt ii co on na d\ u c t , o r . M ay 1996 ND P6051 / NDB6051 N-Channel Enhancement M ode Field Effect Transistor G e n e ral D e s c rip tio n F eatures T hese N -C h a n n e l e n h a n c e m e n t m o d e p o w e r fie ld • 4 8 A , 5 0 V . RDS 0N = 0 .0 2 2 0
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P6051
NDB6051
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DIODE REDRESSEMENT 4040
Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)
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1000A2
2500A2
TNF300
DIODE REDRESSEMENT 4040
RP 8040 X
diode RP 4040
la 8040
G 402 rp
402 rp
KU 612
RP8040
DRA402
LA 4040
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DS11
Abstract: DT455N
Text: DT455N VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance
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DT455N
OT-223
OT-223
DT455N
DS11
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6N13S
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL lfiE D • STTTbSS OQQGSlt 4 HIGH SPEED COUPLER 6N13S, 6N136 INFRARED LED* PHOTO IC The 6N135 and 6N136 consist| off a j high [emitting, diode and a one chip photo diode-translstor. Each unit Is an 8-lead DIP package. APPLICATIONS — K—
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6N13S,
6N136
6N135
6N136
MT5500
6N13S
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP36N06V TMOS V Power Field Effect Transistor Motorola Preferred Devlc« N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This
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MTP36N06V
0E-05
0E-04
0E-03
0E-02
0E-01
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mosfet transistor 32 l 428
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POW ER FET 32 AMPERES 60 VOLTS R DS on = 0-04 OHM N-Channel Enhancement-Mode Silicon Gate
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0E-05
0E-01
mosfet transistor 32 l 428
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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Untitled
Abstract: No abstract text available
Text: FA IR C H ILD MICDNDUCTQ R May1996 tm NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel en hance m en t m ode po w e r field effect tra nsistors are produced using Fairchild's proprietary, high cell
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May1996
NDP6051
NDB6051
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step motor em 483
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB36N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device TM OS POWER FET 32 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTB36N06V/D
MTB36N06V
step motor em 483
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SW201G
Abstract: SW201GP SW202GP 3 DG 201 SW-202 HI201 IH201 SW-201 SW201GS
Text: Quad SPST JFET Analog Switches ANALOG DEVICES □ SW-201/SW-202 FEATURES G ENERAL D E S C R IP T IO N SW-201 T he SW-201 and SW-202 each con sist o f fo u r independent, single -po le , sin g le -th ro w SPST analog sw itches, w hich may be inde p e n d e n tly d ig ita lly co n tro lle d . Each SW-201
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SW-201/SW-202
SW-201
DG-201,
LF11201/13201,
HI201,
IH201
SW-202
LF11202/12202/13202
IH202
SW-201
SW201G
SW201GP
SW202GP
3 DG 201
SW-202
HI201
IH201
SW201GS
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mosfet yb
Abstract: SFS9640
Text: Advanced SFS9640 P o w e r MOSFET FEATURES D S S • Lo w e r Input C a pa citance ■ Im proved G ate C harge ^DS on ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -200V ■ Low R ds(ON) -200 V = 0.5 Q. CM
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SFS9640
-200V
mosfet yb
SFS9640
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Untitled
Abstract: No abstract text available
Text: Advanced P o w e r MOSFET S F W FEATURES = -200 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n - ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -200V
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SFW/I9640
-200V
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irfu9220
Abstract: 7z mosfet AN-994 IRFR9220 T0252AA
Text: PD-9.522D International irêRl Rectifier IRFR9220 IRFU9220 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9220 Straight Lead (IRFU9220) Available in Tape & Reel P-Channel Fast Switching
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IRFR9220
IRFR9220)
IRFU9220)
irfu9220
7z mosfet
AN-994
IRFR9220
T0252AA
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SFP9640
Abstract: No abstract text available
Text: Advanced SFP9640 P o w e r MOSFET FEATURES D S S — -200 V • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = -11 A ■ E xtended S afe O pe ra ting A rea
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SFP9640
-10nA
-200V
O-220
SFP9640
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f4496
Abstract: No abstract text available
Text: HITACHl/íOPTOELECTRONICS> 449B2ÜS '‘HT TÄCHl / ÜPl'ÚtCtO IK U N Í U S T 73 D E | 4 4Tb2DS QGIDIEÌ 73C 10129 D PM1220B-SILICON N-CHANNEL MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • P o w e r M O S FE T M o d u le . • L o w O n R e s is ta n c e .
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449B2
PM1220BSILICON
f4496
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Untitled
Abstract: No abstract text available
Text: - •_ yK UNITRODE CORP — TE 9347963 U N ITR O D E CO RP DE~ ^347^^3 GD10ÛT3 0 92D 10893 D P O W E R M O S F E T T R A N S IS T O R S 50 Volt, 0.05 Ohm N-Channel ^ nzso T- T f l - l l FEATURES D E S C R IP T IO N • • • • • • These low voltage power MOSFETS have been designed for optimum performance in low
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MB71C44-35
Abstract: MB71C44-45
Text: F U JIT S U PROGRAMMABLE BICMOS 6 5 5 3 6 -B IT READ ONLY MEMORY MB71C44-35 MB71C44-45 N o vem b er 1988 Edition 1.0 Bi-CMOS 65536-BIT DEAP PROM 8192 WORDS X 8 BITS The Fujitsu M B71C44 Is high speed B I-C M O S T T L ele c tric a lly field p ro g ra m m a b le read
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MB71C44-35
MB71C44-45
65536-BIT
B71C44
28PCLSJ
MB71C44-45
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4435 m
Abstract: No abstract text available
Text: F U JITSU I PROGRAMMABLE BICMOS 6 5 5 3 6 -B IT READ ONLY MEMORY B i-C M O S 65536-B IT DEAP PROM 8192 W ORDS X 8 BITS The Fujitsu M B71C44 is high spee d B i-C M O S T T L e le c tric a lly flekJ pro g ra m m a b le read only m e m o ry organized as 16384 w o rds by 8 b its . W ith th re e s ta te o u tp u ts , m em o ry
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MB71C44-35
MB71C44-45
65536-B
B71C44
28-PAD
16ITYP
28PCLS)
621TYP
621TYP
905ITYP
4435 m
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Untitled
Abstract: No abstract text available
Text: 500mA High Side PNP Driver with On Chip Flyback Diode Description The CS-8240 is a fast, PNP high side driver capable of delivering up to 500mA into a resistive or inductive load in harsh automotive or industrial environments. An internal flyback diode clamp is incorporated for induc
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500mA
CS-8240
CS-824the
0003b05
CS-8240
O-220
CS-8240YT5
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