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    DIODE RGP10 Search Results

    DIODE RGP10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE RGP10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    rgp10j diode

    Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode
    Text: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C


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    PDF 1N4933 DO-41 1N4934 1N4935 1N4936 DO-15 RGP15M rgp10j diode FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


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    PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


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    PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    transistor 2N5952

    Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
    Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also


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    Untitled

    Abstract: No abstract text available
    Text: RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction


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    PDF RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M 22-B106 AEC-Q101 DO-204AL

    diode rgp10g

    Abstract: RGP10B RGP10G
    Text: RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction


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    PDF RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M MIL-S-19500 AEC-Q101 22-B106 diode rgp10g RGP10B RGP10G

    by250 diode

    Abstract: diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250
    Text: End Applications AUTOMOTIVE END APPLICATION ALTERNATOR POWER STEERING AIR BAG IF 3A 3A 1A 5KW INSTRUMENT PANEL 1A DASHBOARD 1.5A 3A 1.3W, 2W 1.5KW, 5KW ABS SYSTEM 1A 1A, 1.5A 1.3W, 2W 400W÷ 5KW ANTI THEFT DEVICES 1A 1.3W, 2W 400W LIGHT CONTROL 1.3W ENGINE CONTROL


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    PDF BY250, 1N5400, 1N5620GP 1N4000GP, 1N5390, BZX85C, MR2520 EGP10, by250 diode diode RGP30 ultraFast Recovery Bridge Rectifier zener alternator rectifier zy zener rgp10 Diode rgp10 BA150 DIODES BY250 BY250

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


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    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a

    Schottky Diode 039 B34

    Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0001-0809 Schottky Diode 039 B34 S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


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    PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    GP25D

    Abstract: RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M
    Text: GLASS PASSIVATED FAST RECOVERY SILICON SUPER DIODE typ e PIV Peak inverse V o lta g e M AX AVG R e c tifie d C urre n t H a lfW a ve Res. Load 60Hz IO "> TA VPK AA V MAX FWD Peak M A X Reverse S urge C urre n t C urre n t 1 60H Z i " PIV V o lta ge S up erim p ose d


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    PDF DO-41 RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M RECOVERY/DO-201AD RGP25A GP25D RGP15G diode rgp10j diode diode rgp10g diode RGP30G diode rgp10a P25M

    BC5468

    Abstract: diode l 0607 2SA979 2SA958Y IN4I48 VR601 VR802 BC639-BC640 VR602 2SA1386AY
    Text: W IRING DIAGRAM »OWER LAM P - 4 - ft J SPK TML f I 0Í VI CIRCUIT DIAGRAM 0627 06»! Q61S 0639 0643 2SC 3S19AYX 2 2>C216BY g.n» & 9 RGP10D 0607 NOTE: •CD 1 A l l RESISTOR ARE IN OHM 1/4W i 5V. CARBON UNLESS OTHERWISE SPECIFIED 1i86AYX2V 0603 2SA9 79 2 CAPACITANCE ARE IN pF UNLESS OTHERWISE SPECIFIED


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    PDF 3S19AYX C216BY RGP10D IN4I48 VR601/VR602 VR603/VR604 VR802 SB649 2SD669 2SA1386AY BC5468 diode l 0607 2SA979 2SA958Y VR601 BC639-BC640 VR602

    PG06J

    Abstract: diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a FEP30JT
    Text: C£X>G e n e r a l v S e m ic o n d u c t o r END-USEAPPLICATIONS '¿•it V BH I END-USE INPUT BRIDGE (A) O U TPUT/ SNUBBER Output DF08M W08G KBP08M GBU4K GBU6K GBU8K RGP10J RGP15J RGP30J FEP6JT FEP16JT FEP30JT 40V RGP10K RGP15K RGP30K 1.0A 1.5A 3.0A 5.0A


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    PDF DF04M KBP04M DF06M KBP06M RGP10J RGP15J RGP30J FEP16JT FEP30JT SB040 PG06J diode rgp10g rgp10j diode RGP30J DIODE DIODE 10a 800v bridge diode 60a general instrument uf4006 RGP15J diode diode 1000V 10a

    fagor fbu4 bridge rectifier

    Abstract: diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A
    Text: FA G O R^ End Applications AUTOMOTIVE END APPLICATION If DEVICES USED DEVICE TYPE ALTERNATOR 3A B Y250,1N 5400, 1N5620GP G eneral Purpose Rectifier POWER STEERING 3A GP30 AM BAG 1A 1N4000GP, ESI 5KP Transient V oltage Suppressor INSTRUMENT PANEL 5KW 1A GP10, FS1


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    PDF 1N5620GP 1N4000GP, 1N53S0, 1N5400, BZX85C 5390G BY39G, C1500R, 3ZX35C, fagor fbu4 bridge rectifier diode zener 600v 1a ZENER DIODE 5K diode bridge 2A 3ZX35C Zener Diode 3A zener diode 5A RGP10 diode RGP30 Diode bridge 600V 0.8A