BCS028N06NS
Abstract: 028N06NS DC1502
Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a
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DC1502A
LTC4359HDCB
2V/20A
LTC4359
dc1502af
BCS028N06NS
028N06NS
DC1502
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MMBD201
Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Text: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD2010T~
2PHX34593F+
MMBD201
BD201
bd2010
BD301
MMBD2010
318D-03
MMBD101
MMBD2010T1
DIODE WJ SOt23
MMBD3010T1
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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Untitled
Abstract: No abstract text available
Text: MIL-S-19500/46fl ER AMENDMENT 2 AMENDMENT 1 29 March1972 MILITARYSPECIFICATION SEMICONDUCTOR DEVICE DIODE,GALLIUMARSENIDE, MIXER TYPES1N5764,1N5764M,lN5764fviR I Thisamendment formsa partof MILITARYSPECIFICATION MIL-S-19500/460(ER), dated19 November1971,and is approvedby the U.S.ArmyElectronics
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MIL-S-19500/46fl
March1972
TYPES1N5764,
1N5764M,
lN5764fviR
MIL-S-19500/460
dated19
eligib111,
-A903)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diode BAW156LT1 This switching diode has the following features: Motorola Preferred Device Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel
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BAW156LT1
BAW156LT3
inch/10
BAW156LT1
OT-23
O-236AB)
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2N 3904 transistor
Abstract: lm 3904 3904 transistor
Text: Semiconductor LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface R egister read back capability General Description The LM84 is a rem ote diode tem perature sensor, Deita-Sigm a analog-to-digital converter, and digital over-tem perature detector with an SM Bus interface. The
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Marking J30 SOT23
Abstract: 4014C g0750
Text: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:
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MMBD1010LT1/D
MMBD1010LT1
MMBD2010T1
MMBD3010T1
MBD1010LT1/D
Marking J30 SOT23
4014C
g0750
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9962 GH
Abstract: L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode
Text: DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT MILITARY TEMPERATURE RANGE: - 5 5 ° C to + 1 2 5 ° C GENERAL DESCRIPTION The Fairchild 9930 series of Diode Transistor Micrologic is a member of the Compatible Current Sinking Logic CCSL family designed for use in
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O-116)
0035j^
U3IXXXX51X
U6AXXXX51X
9962 GH
L9932
l9933
9945 A transistor
DTL 9930
9936 GN
9962 6H
fairchild 9930 integrated circuits data
inverter circuit diagram 9936
FD100 diode
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR LL4148 TECHNI CAL DATA SIL IC O N E PIT A X IA L PLAN AR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Fast switching diode I M A X IM U M RA TING Ta=25°C CHARACTERISTIC Maximum Peak Reverse Voltage Reverse Voltage Average Rectified Current
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LL4148
100i2
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131-G W J 60
Abstract: smd Marking OU smd marking m4 diode smd k9 DIODE mark k9 M2FM3 max5536
Text: Schottky Barrier Diode wnnw OUTLINE Single Diode M2FM3 U n it t m m Package : M2F W e ig h t 0.072# T y p 1 ) '/ — K 30V 6A v—9 Feature a — w — : • /J ^ S M D • Sm all S M D • V f=0.46V • filR=0.2mA • Low V f =0 .4 6 V • • Reverse connect protection for
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Ve-15V
J532-1)
131-G W J 60
smd Marking OU
smd marking m4
diode smd k9
DIODE mark k9
M2FM3
max5536
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9180A
Abstract: No abstract text available
Text: Ordering number:ENN6273 Schottky Barrier Diode SBS005 30V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Package Dimensions unitimm 1293 [SBS005] Features • Low forward voltage (If.-0.5A, Vp max=0.40V)
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ENN6273
SBS005
SBS005]
SBS005applied
IT00628
mxi629
ITO0030
JT0063I
GG23311
9180A
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1N5825
Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5823
1N5824
1N5825
1N5825
diode 1N5825
N5824
1n6823
marking Bq sot23
1N5824 ON
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Untitled
Abstract: No abstract text available
Text: PHILIPS CBL1 Double diode output pentode Duodiode-penthode de sortie Doppeldiode-Endpentode Heating : indirect by A.C. or D.C.; series supply Chauffage: indirect par C.A. ou C.C.; alimentation en série Heizung : indirekt durch Wechsel oder Gleichstrom;
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C
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BA982
BA983
50mmx50mmx
24-Jun-96
BA983
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zener diode p6ke250a
Abstract: F6KE F6KE180A Diode P6KE 8A F6KE180 PSKE P6KE10 P6KE15 equivalent P6KE11 P6KE11A
Text: JGD O P6KE SERIES TRANSIENT VOLTAGE SUPPRESSORS DIODE VOLTAGE RANGE 6.8 to 400 Volts 400 Watts Peak Power DO-15 FEATURES .140 3.6 .104(2.6) DIA. * Plastic package has underwriters laboratory flammability classifications 94V-0 *i500W surge capability at 1ms
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i500W
DO-15
P6KE250
P6KE250A
P6KE300
P6KE350
P6KE350A
P6KE400
P6KE400A
300us.
zener diode p6ke250a
F6KE
F6KE180A
Diode P6KE 8A
F6KE180
PSKE
P6KE10
P6KE15 equivalent
P6KE11
P6KE11A
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MR1-1600
Abstract: MR1-1200 MR1-1400 rectifier diode 20 amp 1200 volt
Text: MR1-1200 SILICON MR1-1400 MR1-1600 HIGH VOLTAGE LEAD MOUNTED SILICON RECTIFIERS A XIA L LEAD SILICON RECTIFIERS 1200,1400,1600, VOLTS 1 AMPERE . . . designed fo r television "da m p e r" diode service and other high voltage industrial/consum er applications.
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MRl-1200
MR1-1400
MR1-1600
MRl-1200
MR1-1600
MR1-1200
rectifier diode 20 amp 1200 volt
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BUK657
Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Text: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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fab53131
D2D71D
BUK657-500A
BUK657-500B
BUK657-500C
BUK657
-500A
-500B
-500C
ID/100
BUK657-500C
T0220AB
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RF2312 PCBA
Abstract: No abstract text available
Text: » • e MICRODEVICES RF2312 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers Laser Diode Driver • Cable Modems Return Channel Amplifier • Broadband Gain Blocks Base Stations Product Description The RF2312 is a general purpose, low cost high linearity
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RF2312
RF2312
1000MHz,
RF2312 PCBA
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TPS805
Abstract: TLN107A
Text: TOSHIBA TPS805 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS805 Unit in mm 4 PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR +0 TPS805 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.
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TPS805
TPS805
900nm
TLN107A,
TLN107A
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1N430A
Abstract: 1N430B 1N433A HP 4066 1N433B hp 5960 marking BVV 120-SECOND
Text: MIL-S-1950 0/3 35 EL 28 June 1 9 6 5 MILITARY SPECIFICATION SEMICONDUCTOR DIODE, SILIC O N , VOLTAGE REFERENCE (TEMPERATURE-STABLE) TYPES 1N430A, ÎN 4308 1. SCOPE 1.1 Scope, - This specification covers the detail requirements for silicon, low1. i _ _ j._ 1
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MIL-S-19500/335
1N430A,
N430B
1N430B
5960-A558
1N430A
1N433A
HP 4066
1N433B
hp 5960
marking BVV
120-SECOND
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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N313
Abstract: TLP3521 LTML
Text: TLP3521 GaAs IRED S PHOTO-TRIAC TRIAC DRIVER PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP352I crossing consists of a zero voltage turn-on photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 16 lead plastic DIP package.
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TLP3521
TLP352I
2500Vrms
E67349
TLP3521
N313
LTML
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g118ap
Abstract: G118 diode EE d129 st s466
Text: W T Siliconix J Q P incorporated 1 Q • ■w Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • Internal Zener Diode Protects the Gate • • Switching Analog Signals • Multiplexing • Six Switches Per Chip • Designed to Operate with
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