D4JG
Abstract: No abstract text available
Text: NIS6111 Product Preview ORing Diode Ultra Efficient, High Speed Diode The NIS6111 ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems, such as those required for today’s digital circuits. It couples a high speed
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NIS6111
PLLP32
488AC
NIS6111/D
D4JG
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D4JG
Abstract: No abstract text available
Text: NIS6111 Product Preview Better ORing Diode Ultra Efficient, High Speed Diode The NIS6111 Better ORing diode is a high speed, high efficiency, hybrid rectifier, designed for low voltage, high current systems, such as those required for today’s digital circuits. It couples a high speed
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NIS6111
PLLP32
488AC
NIS6111/D
D4JG
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sk0032
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032 Type：SB120T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0032
TypeSB120T
size32mils
32mils0
thickness12
038mm
area24
padAnode28mils
28mils0
sk0032
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Schottky Diode 40V 5A
Abstract: sk-0068a
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0068A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0068A Type：SB540 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0068A
TypeSB540
size68mils
68mils1
thickness12
038mm
area55mils
55mils1
padAnode62
Schottky Diode 40V 5A
sk-0068a
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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LA1460
Abstract: La1461 reverse forward control diagram HD4s MA425 L4510 ZHMA0425 MA424 MA426 MA428
Text: HYBRID I.C.s "Hi-Net" Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general
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100mA
LA1460
LA1461
8100P
LA1460
La1461
reverse forward control diagram
HD4s
MA425
L4510
ZHMA0425
MA424
MA426
MA428
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Untitled
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0032A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0032A Type：SB140T 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0032A
TypeSB140T
size32mils
32mils0
thickness12
038mm
area24
padAnode28mils
28mils0
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reverse forward control diagram
Abstract: LA1460
Text: HYBRID I.C.s "Hi-Net" Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general
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100mA
LA1460
LA1461
8100N
reverse forward control diagram
LA1460
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"Schottky Diode"
Abstract: 1N5822 data sheet
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0055A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0055A Type：1N5822 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0055A
Type1N5822
size55mils
55mils1
thickness12
038mm
area44
padAnode48
characteristicsTa25
"Schottky Diode"
1N5822 data sheet
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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schottky diode
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0060A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0060A Type：SB340 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0060A
TypeSB340
size60mils
60mils1
thickness12
038mm
area48mils
48mils1
padAnode54
schottky diode
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Schottky Diode 40V 2A
Abstract: "Schottky Diode"
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0045A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0045A Type：SB240 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0045A
TypeSB240
size45mils
45mils1
thickness12
038mm
area36
padAnode40
characteristicsTa25
Schottky Diode 40V 2A
"Schottky Diode"
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SK-0028A
Abstract: Schottky diode Die IR SK-002 1n5819 die schottky diode
Text: SILICON SCHOTTKY DIODE CHIPS DEVICE NO. SK-0028A 1. Scope： This specification applies to silicon schottky diode chips Device No. SK-0028A Type：1N5819 2. Structure： 2-1. Planar type：Silicon Schottky Diode 2-2.Electrodes： Top side（Anode）：Ti/Ni/Ag
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SK-0028A
Type1N5819
size28mils
28mils0
thickness12
038mm
area20
padAnode24mils
24mils0
SK-0028A
Schottky diode Die IR
SK-002
1n5819 die
schottky diode
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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6098-0126
Abstract: 6098-0 diode c02 D0D82345-32010D D0D82345-20060C MT Series 6098-0061 6098-0022 6098-0017 6098-0129
Text: MT SERIES 090/WITH BUILT-IN DIODE Small connector incorporating large capacity diode of high reliability and excellent heat radiation for the applications C-10 requiring rectifying function. Structure Diode Connector M Connector F Housing F Connector M with built-in chip diode
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090/WITH
D0D82345-32010D
6098-0126
6098-0
diode c02
D0D82345-20060C
MT Series
6098-0061
6098-0022
6098-0017
6098-0129
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diode array
Abstract: C6005
Text: 32-Unit High Voltage Diode Array LZ1030M • LZ1030M 32-Unit High Voltage Diode Array Pin Connections Description The LZ1030M is a high voltage diode array orga nized as a 3 2 -circuit of anode common. l33ll32ll3Ï1l3Qll29l|2sll27ll26ll25l|24l|23l ■ 1.
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32-Unit
LZ1030M
LZ1030M
l33ll32ll3
1l3Qll29l
2sll27ll26ll25l
32-circuit
32-unit/package
diode array
C6005
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dual laser optical pickup
Abstract: sharp laser diode SHARP optical pickup 2 Wavelength Laser Diode sharp
Text: SHARP Under development • New product LT025NS Compact Laser Diode High Power Output Type Compact Laser Diode for CD-R 05.6 General Description Sharp's LT025NS is a high power output type compact laser diode Outline Dimensions (U nit: m m ) which is developed to write on a CD-R.
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LT025NS
LT025NS
785nm
200ms
dual laser optical pickup
sharp laser diode
SHARP optical pickup
2 Wavelength Laser Diode sharp
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Untitled
Abstract: No abstract text available
Text: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general
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ZHLA0651
ZHMA0425
MA425
ZHMA042S
MA426
ZHLA0652
ZHLA0653
ZHMA0427
MA427
ZHLA0654
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CVD-450
Abstract: Laser Diode 808 nm
Text: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse nide Monolithic Quantum Well Arrays made by MOCVD
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VD-400
CVD-400
CVD-450
Laser Diode 808 nm
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Thyristor ABB ys 150
Abstract: No abstract text available
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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9315b
Abstract: SLD201V SLD201V3
Text: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.
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SLD201
SLD201U-3/V-3
SLD201U-3
SLD201V-3
9315b
SLD201V
SLD201V3
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6hx ic
Abstract: nichicon lf HD4s
Text: HYBRID I.C.s “Hi-Net” n ic liic o n Diode Arrays H High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general
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ZHMA2902
ZHMA2911
ZHMA2912
ZHMA2913
ZHMA2914
6hx ic
nichicon lf
HD4s
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T 4512 H diode
Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Text: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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--25-OÃ
T 4512 H diode
ABB thyristor modules
T 3512 H diode
diode T 4512 H
free of LA 4508
7508H
diode T 3512 H
V10-40
vez300
CLA 80 E 1200
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