2x520
Abstract: No abstract text available
Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions
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312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
2x520
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Untitled
Abstract: No abstract text available
Text: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol
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310-08N1
310-12N1
310-14N1
310-16N1
310-20N1
310-22N1
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diode mdd 310
Abstract: No abstract text available
Text: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol
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310-08N1
310-12N1
310-14N1
310-16N1
310-20N1
310-22N1
diode mdd 310
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527000
Abstract: MDD312
Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions
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312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
527000
MDD312
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Untitled
Abstract: No abstract text available
Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol
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2x520
2x310
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
10Transient
20100203a
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312-22N1
Abstract: MDD312
Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Symbol
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2x520
2x310
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
10Transient
20100203a
312-22N1
MDD312
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MDD312
Abstract: No abstract text available
Text: MDD 312 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM V VRRM VDRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 3 2 3 2 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1
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2x520
2x310
312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
10Transient
MDD312
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Untitled
Abstract: No abstract text available
Text: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-1600 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine
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310-08N1
310-12N1
310-14N1
310-16N1
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ixys MDD 26 - 14
Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l
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MDD 500-22N1
Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Text: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●
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D6-11
D6-14
D6-17
D6-20
D6-23
D6-26
D6-29
D6-32
D6-35
D6-38
MDD 500-22N1
ixys MDD 26 - 14
ixys MDD 172 12
B2U 250
S2MD
2235nm
ixys MCC 700
IXYS MCC 550
mcc 550 ixys
MDD 500-12N1
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Untitled
Abstract: No abstract text available
Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
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312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
E72873
20130409f
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Untitled
Abstract: No abstract text available
Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
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312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
E72873
20130813g
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312-22N1
Abstract: No abstract text available
Text: MDD 312 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0 2 E72873 Maximum Ratings 520 310 A A t = 10 ms 50 Hz t = 8.3 ms (60 Hz)
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312-12N1
312-14N1
312-16N1
312-18N1
312-20N1
312-22N1
200-2200V
E72873
20121206e
312-22N1
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brass terminal bridge rectifier
Abstract: diode mdd 310
Text: High Power Diode Modules MDD 310 IFRMS = 2 x 480 A IFAVM = 2 x 305 A VRRM = 800 - 1600 V 3 VRSM VRRM V V 3 Type 1 2 2 1 900 1300 1500 1700 800 1200 1400 1600 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 TVJ = TVJM
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3000ctifier
brass terminal bridge rectifier
diode mdd 310
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ixys MDD 172 12
Abstract: motor IG 2200 19 IXYs MCO ixys mco 255 MCC132 MCC161 MCC162 MCC170 MCC72 MCC16
Text: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings
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600-20io1
600-22io1
MCC19
ixys MDD 172 12
motor IG 2200 19
IXYs MCO
ixys mco 255
MCC132
MCC161
MCC162
MCC170
MCC72
MCC16
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MCC255
Abstract: motor IG 2200 19 THYRISTOR MODULE IXYS MCC 310 MCC95 MCC132 MCC161 MCC162 MCC170 MCC72 MCC94
Text: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings
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600-20io1
600-22io1
MCC44
MCC26
MCC19
MCC255
motor IG 2200 19
THYRISTOR MODULE IXYS MCC 310
MCC95
MCC132
MCC161
MCC162
MCC170
MCC72
MCC94
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D6 type diode
Abstract: D626 D635 ixys mdd D617 d632 72 diode D620 diode mdd 310 MDO 26
Text: Rectifier Diode Modules Contents Package style V rrm/V oRm V Type Page MDO 26 D6-2 MDD 44 D6-5 S Diode Modules 1999 IXYS All rights reserved MDD 56 D6-8 MDD 72 D6-11 MDD 95 D6-14 MDD 142 D6-17 MDD 172 D6-20 MDD 220 D6-23 MDD 250 D6-26 MDD 255 D6-29 MDD 310
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D6-11
D6-14
D6-17
D6-20
D6-23
D6-26
D6-29
D6-32
D6-35
D6-38
D6 type diode
D626
D635
ixys mdd
D617
d632
72 diode
D620
diode mdd 310
MDO 26
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MDD 500-12N1
Abstract: 142-12N1 26-16N1B 172-14N1 72-08N1 172-18N1 500-14N1 MDD 500-14N1 56-18N1 56-14N1B
Text: , Diode Modules Single and Double lFAV = 36-500 A Type ^th JC *FSM p mQ 0.8 6.0 K/W K/W 1.0 0.2 MDD MDD MDD MDD MDD 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 800 1200 1400 1600 1800 36 MDD MDD MDD MDD MDD 44-08N1B 44-12N1B 44-14N1B 44-16N1B 44-18N1B 800
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O-240
26-08N1B
26-12N1B
26-14N1B
26-16N1B
26-18N1B
44-08N1B
44-12N1B
44-14N1B
44-16N1B
MDD 500-12N1
142-12N1
172-14N1
72-08N1
172-18N1
500-14N1
MDD 500-14N1
56-18N1
56-14N1B
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220-14N1
Abstract: 172-16N1 220-12n1 220-08N1 220-16n1 250-08N1 172-08N1 MDD 172-08N1 TO-240AA 4404n
Text: Diode Modules •f lFAV = 36-305 A Type *F * v S E 72 873 (M) ► New !► MOD 26-18N1B * MDD 28-16N1B 1800 1600 1400 MD026-12N1B MDD 26-08N1B 1200 ► MDD 44-18N1B* MDD 44-16N1B • MDD 44-14N1B *iwc 36 100 60 650 Ru>cie par chip per chip 4S*C 10 RIS
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26-18N1B
28-16N1B
26-14N1B
O-240
MD026-12N1B
26-08N1B
26-06N1B
26-04N1B
44-18N1B*
44-16N1B
220-14N1
172-16N1
220-12n1
220-08N1
220-16n1
250-08N1
172-08N1
MDD 172-08N1
TO-240AA
4404n
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mdd 42
Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 PAGE-42 MDD72 MDD72-08N1B
Text: Diode Modules, Single and Double f ‘ 1 FAV = 36-500 A MDO Type FSM New 45°C 10 ms A MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD 26-16N1B MDD26-18N1B 100 60 800 1200 1400 1600 1800 36 800 59 100 100 1150 100 150 1400 p 650 m iî °C 6.0 150 K/W 1.0 0.2 24 Fig. 24 TO-240 AA
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O-240
MDD26-08N1B
MDD26-12N1B
MDD26-14N1B
26-16N1B
MDD26-18N1B
MDD44-08N1B
44-12N1B
44-14N1B
MDD44-16N1B
mdd 42
diode mdd 42
MD0500
MDD142-08N1
172-14N1
MDD72-12N1B
MDD5
PAGE-42
MDD72
MDD72-08N1B
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MDD 42-12-N1
Abstract: No abstract text available
Text: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms
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K21-0120'
K21-0120
K21-0180
K21-0265
DD165,
DD220
MDD 42-12-N1
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MDD72-18N1B
Abstract: MD0500 14N1B MDD44-16N1B MDD 500-14N1 mdd26-16 16N1B mdd56-08n1b MDD250
Text: Diode Modules, ’ TA V ¡4- - - - - - - - h rî — Î- f, r| — 4— 4- Single and Dual I 1-N- ' Ì MDO 36-560 A Type A MDA 72-08N1B MDA 72-14N1B MDA 72-16N1B MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD26-16N1B MDD26-18N1B MDD44-08N1B MDD44-12N1B
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72-08N1B
72-14N1B
72-16N1B
MDD26-08N1B
MDD26-12N1B
MDD26-14N1B
MDD26-16N1B
MDD26-18N1B
MDD44-08N1B
MDD44-12N1B
MDD72-18N1B
MD0500
14N1B
MDD44-16N1B
MDD 500-14N1
mdd26-16
16N1B
mdd56-08n1b
MDD250
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MDD 500-22N1
Abstract: MDO 500-12N1 500-22N1 255-16N1 26-14N1B 500-20N1 MDD 172-14N1
Text: Diode Modules, J - L 1 » 1-N— 11 I L w 1 Single and Dual -J MDO lFAV= 36-560 A v Type I FAV @ T'C V A X 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800_
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26-08N1B
26-12N1B
26-14N1B
26-16N1B
26-18N1B
44-06N1B
44-12N1B
44-14N1B
44-16N1B
44-18N1B
MDD 500-22N1
MDO 500-12N1
500-22N1
255-16N1
500-20N1
MDD 172-14N1
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Untitled
Abstract: No abstract text available
Text: DIXYS MDD310 IFRMS High Power Diode Modules ^ FAVM 2 x 480 A 2 x 305 A vRRM 800 -1600 V Type 800 1200 1400 1600 900 1300 1500 1700 Maximum Ratings A 480 A 305 Symbol Test Conditions Urms Uavm TVJ — Tc = 100°C; 180° sine ^FSM TVJ = 45°C; VR= 0 t = 10 ms 50 Hz , sine
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MDD310
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