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    DIODE MARKING YG Search Results

    DIODE MARKING YG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING YG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 10a 400v

    Abstract: TO-220F15 CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 erb93 diode ERC91-02
    Text: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER


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    PDF CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 diode 10a 400v TO-220F15 CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 erb93 diode ERC91-02

    power Diode 200V 10A

    Abstract: Diode C91 02 c91 02 high power rectifier diode single 200v 30A schottky C91 diode "Power Diode" 200V 30A 30A, 600v RECTIFIER DIODE TO-220F15 diode 10a 400v
    Text: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER


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    PDF CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 power Diode 200V 10A Diode C91 02 c91 02 high power rectifier diode single 200v 30A schottky C91 diode "Power Diode" 200V 30A 30A, 600v RECTIFIER DIODE TO-220F15 diode 10a 400v

    Untitled

    Abstract: No abstract text available
    Text: DATE DRAWN FEB.-10-‘03 CHECKED FEB.-10-‘03 FEB.-10-‘03 Device Name : Type Name : YG972S6R Spec. No. : MS5D1716 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,


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    PDF YG972S6R MS5D1716 H04-004-07 H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: DAT E CHECKED Jun.-18-‘03 Jun.-18-‘03 Device Name : Type Name : YG805C10R Spec. No. : MS5D1816 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any


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    PDF YG805C10R MS5D1816 H04-004-07 H04-004-03

    yg123s15

    Abstract: No abstract text available
    Text: DATE DRAWN ’97-10-8 CHECKED ’97-10-8 Device Name : Type Name : YG123S15 Spec. No. : MS5D0383 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any


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    PDF YG123S15 MS5D0383 H04-004-07 H04-004-03 yg123s15

    yg865c15

    Abstract: YG865C15R MS5D1776
    Text: DATE CHECKED JUL.-28-‘03 JUL.-28-‘03 Device Name : Type Name : YG865C15R Spec. No. : MS5D1776 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any


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    PDF YG865C15R MS5D1776 H04-004-07 H04-004-03 yg865c15 YG865C15R MS5D1776

    SD-46 Diode

    Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
    Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE


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    PDF 5V/10A) 500ns, SD-46 Diode Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006

    schottky diode 60V 5A

    Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
    Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE


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    PDF 5V/10A) 500ns, schottky diode 60V 5A 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004

    Diode SMA marking code ye

    Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
    Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)


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    PDF TV04A5V0-HF TV04A441-HF SMA/DO-214AC QW-JTV01 Diode SMA marking code ye smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL

    FMB-24M

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC COMPANY, LTD. SPECIFICATIONS DEVICE TYPE NAME SANKEN SILICON SCHOTTKY BARRIER DIODE FMB-24M 1. Scope 2. General The present specifications shall apply to Sanken silicon diode, FMB-24M. 2.1 Type Silicon Schottky Barrier Diode 2.2 Structure Resin Molded


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    PDF FMB-24M FMB-24M. UL94V-0 September/28/ SSA-03414 FMB-24M

    4580 SOIC-8

    Abstract: MC33064
    Text: MC34064, MC33064, NCV33064 Undervoltage Sensing Circuit The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution for low voltage detection with a single external resistor. The MC34064 features a


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    PDF MC34064, MC33064, NCV33064 MC34064 O-226AA, MC34064/D 4580 SOIC-8 MC33064

    Untitled

    Abstract: No abstract text available
    Text: Product specification BSS314PE OptiMOS -P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101


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    PDF BSS314PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327:

    Untitled

    Abstract: No abstract text available
    Text: 60V High Current Low RDS ON N ch Trench Power MOSFET EKH06100 / FKH0660 / SKH06100 Features Package TO220 EKH06100  VDS - 60 V  ID - 100 A (EKH06100, SKH06100)  RDS(ON) - 3.8 mΩ typ.(VGS = 10 V, ID = 50 A)


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    PDF EKH06100 FKH0660 SKH06100 EKH06100 EKH06100, SKH06100) O220F FKH0660

    MC33164

    Abstract: MC33164-3 MC34164 MC34164-3 MC34164-5 NCV33164
    Text: MC34164, MC33164, NCV33164 Micropower Undervoltage Sensing Circuits The MC34164 series are undervoltage sensing circuits specifically designed for use as reset controllers in portable microprocessor based systems where extended battery life is required. These devices offer


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    PDF MC34164, MC33164, NCV33164 MC34164 O-226AA, r14525 MC34164/D MC33164 MC33164-3 MC34164-3 MC34164-5 NCV33164

    Fuji Electric SM

    Abstract: YG811S04
    Text: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol


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    PDF YG811S04R MA-41 Fuji Electric SM YG811S04

    Fuji Electric SM

    Abstract: No abstract text available
    Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


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    PDF YG811S06R Fuji Electric SM

    Fuji Electric SM

    Abstract: No abstract text available
    Text: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


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    PDF YG801C09R Fuji Electric SM

    yg801c

    Abstract: No abstract text available
    Text: 1. SCOPE T h is s p e c if ic a t io n p rovid es the ra tin g s and the t e s t requirement fo r FUJI SILICON DIODE YG801C06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown is shown It is marked to type name or abbreviated type name, p o la r it y and Lot Na


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    PDF YG801C06R yg801c

    d 1667

    Abstract: marking bbb2 S380D
    Text: 17E D TELEFUNKEN ELECTRONIC ODD^flflS 1 • ALGG m S 380 D • S 381 D YGiyilHUIMtiM electronic Creative lechnôtogfes 1 Silicon Mesa Diode 01 -1 ST Application: Rectifier Features: • Glass passivated junction • Hermetically sealed package Dim ensions in mm


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    PDF S380D S380DS381D d 1667 marking bbb2 S380D

    d04 diode Marking s4

    Abstract: YG805C04R jill20
    Text: This material and the information herein t$ the property of Fuji Electric Co.Ltd. They shall be neither «produced, copiée lem. or disclosed in any way whatsoever lor the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.


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    PDF YG805C04R HQ4-004-07 d04 diode Marking s4 YG805C04R jill20

    T3 SL 100B

    Abstract: YG802C09R ful wave rectifier yg802c IC MARKING A60
    Text: This material and he Information herein Is the property o* Fuji Electric Co .Ltd. They Shalt be neither («produced, copiée leni, or disclosed in any way whatsoever for the use ol any third p a rtid o r used for the manufacturing purposes w ith out the express written consent of Fuji Electric Co., Ltd.


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    PDF YG802C09R H04-004-07 T3 SL 100B YG802C09R ful wave rectifier yg802c IC MARKING A60

    yg805c

    Abstract: No abstract text available
    Text: This ma «rial and the information herein ts the property of Fuji Elecinc Co.Ltd. They shall be neither reproduced, copiée leni, or disclosed in any way w hatsoever for the use of a ny third pany.nor used for the manufacturing purposes w ithout the express writ ion consent of Fuji Electric Co. Ltd.


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    PDF YG805C04R H04-004-07 YG805C04R yg805c

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    Fuji Electric SM

    Abstract: No abstract text available
    Text: This maiertaland he Information herein Is Ihe properly of Fuji Electric Co .Ltd. They shall be neither («produced, copiée tent, or disclosed in any way whatsoever for ihe use of any third partidor used for ihe manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.


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    PDF YG802C09R H04-004-07 YG802C09R Fuji Electric SM