jx4148
Abstract: J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1
Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING
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MIL-PRF-19500/116L
MIL-PRF-19500/116K
1N914,
1N914UR,
1N4148-1,
1N4148UR-1,
1N4148UB,
1N4148UB2,
1N4148UB2R,
1N4148UBCA,
jx4148
J4148
JX-4148
JV4148
1n914 surface mount diode
1N4148-1UR
DIODE 1n4148
1N4148 JANTXV
1N4148-1 JANS
1N4148-1
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2N7367
Abstract: 2N3768 2N7368 IRGMIC50U MIL-PRF19500 TRANSISTOR SUBSTITUTION 1993 marking 589A
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 July 1998 INCH-POUND MIL-PRF-19500/589A 15 April 1998 SUPERSEDING MIL-S-19500/589 24 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BIPOLAR
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MIL-PRF-19500/589A
MIL-S-19500/589
2N7367
2N7368,
MIL-PRF-19500.
2N3768
2N7368
IRGMIC50U
MIL-PRF19500
TRANSISTOR SUBSTITUTION 1993
marking 589A
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PDF
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ta1938
Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
Text: MIL-S-19500/^ 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5835 and 1N5836 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment
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MIL-S-19500/UQU
1N5835
1N5836
MIL-S-19500,
MIL-S-19500.
MIL-S-19500
5961-A497
ta1938
RAW MATERIAL INSPECTION procedure
1N5836
MR 4011
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PDF
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1B marking transistor
Abstract: st ld 33 FDD603AL transistor themal
Text: E M IC O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T his N-Channel logic level enhancem ent m ode power fie ld e ffe c t tra n s is to r is produced using F a irc h ild ’s proprietary, high cell density, DM OS technology. This
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FDD603AL
FDD603AL,
1B marking transistor
st ld 33
FDD603AL
transistor themal
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PDF
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FDD5690
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD5690
FDD5690,
FDD5690
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PDF
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FDZ201N
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm FDZ201N N-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ201N minimizes both PCB space
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FDZ201N
FDZ201N
300ns,
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.894A International IQR Rectifier IR F Z 4 8 S /L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRFZ48S Low-profile through-hole (IRFZ48L) 175°C Operating Temperature Fast Switching V R dss d s (o h ) = 60V = 0 .0 1 8 0 lD = 5 0 A
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IRFZ48S)
IRFZ48L)
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PDF
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IRFZ46
Abstract: No abstract text available
Text: PD -9.922A International IQ R Rectifier IR F Z 4 6 S /L HEXFET P ow er M O S F E T Advanced Process Technology Surface Mount IRFZ46S Low-profile through-hole (IRFZ46L) 175°C Operating Temperature Fast Switching V dss = 50V R d s (o h ) = 0.024Í2 lD = 72 A
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IRFZ46S)
IRFZ46L)
IRFZ46
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PDF
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R PRELIMINARY tm FDN5630 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically • 1.7 A, 60 V. to improve the overall efficiency of DC/DC converters using Rds on = 0.100 £1 @ V GS = 10 V
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FDN5630
effi91
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PDF
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b1545
Abstract: BR1545 BR1545CT MBR1535CT b1535 b1545 diode b1545 motorola BR1535C
Text: MOTOROLA Order this document by MBR1535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR1535CT MBR1545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-o f-th e-art devices have the following features:
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MBR1535CT/D
MBR1535CT
MBR1545CT
26SIONING
-220A
b3b7B55
b1545
BR1545
BR1545CT
b1535
b1545 diode
b1545 motorola
BR1535C
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PDF
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT SCHOTTKY BARRIER DIODE I/UTEMir / p o w e fs e h co n w jcto r Features Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package • • • • SOD-323 □ A B Mechanical Data_ • • *1Eh- -H Case: SOD-323, Plastic
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OCR Scan
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BAT42WS
BAT43WS
OD-323
OD-323,
MIL-STD-202,
BAT43WS
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PDF
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BYT261PIV400M
Abstract: No abstract text available
Text: M OTOROLA Order this document by BYT261PIV-400M/D SEMICONDUCTOR TECHNICAL DATA U ltra fa s t Power R ectifiers BYT261PIV-400M D u al high v o lta g e re ctifie rs su ited fo r S w itc h m o d e P o w e r Supplies and other power converters. • Very Low Reverse Recovery Tim e
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BYT261PIV-400M/D
E69369
BYT261PIV-400M
BYT261PIV-400M
OT-227B
b3b72SS
BYT261PIV400M
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PDF
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IRLI3705N
Abstract: No abstract text available
Text: PD - 9.1369B International Iö R Rectifier IRLI3705N HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR4015LWT/D SEMICONDUCTOR TECHNICAL DATA MBR4015LWT Advance Information SWITCHMODE Pow er R ectifier Motorola Preferred Device . . . using the Schottky Barrier principle this s ta te -o f-th e -a rt device is dedicated to the ORing function in paralleling power supply and has the
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MBR4015LWT/D
MBR4015LWT
340K-01
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PDF
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Motorola b660T
Abstract: diode motorola 119 B640T N20TC
Text: MOTOROLA Order this document by MBRD620CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBRD620CT MBRD630CT MBRD640CT MBRD650CT MBRD660CT DPAK Surface Mount Package . . . in switching power supplies, inverters and as free wheeling diodes, these
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MBRD620CT/D
MBRD620CT
MBRD630CT
MBRD640CT
MBRD650CT
MBRD660CT
MBRD620CT,
MBRD660CT
Motorola b660T
diode motorola 119
B640T
N20TC
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PDF
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Untitled
Abstract: No abstract text available
Text: SEM IC O N D U C TO R FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30mQ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS on @VQS=2.5V on special
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FDMA420NZ
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PDF
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DIODE MARKING 1M
Abstract: IOR 451
Text: PD - 9.1501 A International IÖR Rectifier IRFIZ24N HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier
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TheTO-22C)
DIODE MARKING 1M
IOR 451
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PDF
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Untitled
Abstract: No abstract text available
Text: P D -9.1673 International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1673A International IÖR Rectifier IRFIZ24E HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS <D • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Description Fifth G en eratio n H E X F E T s fro m International R ectifier
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PDF
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BR2030C
Abstract: MBR2015CTL B2015 tl 2n2222
Text: MOTOROLA Order this document by MBR2015CTL/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Dual S ch o ttky Pow er R e ctifiers MBR2015CTL MBR2030CTL . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te-o f-th e-art geometry features epitaxial construction with
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MBR2015CTL/D
BR2030C
MBR2015CTL
B2015
tl 2n2222
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PDF
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DIODE D3S 5D
Abstract: No abstract text available
Text: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
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PDF
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DIODE D3S 5D
Abstract: diode D3s IRFZ3
Text: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
diode D3s
IRFZ3
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PDF
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DO-213AA
Abstract: TZQ5221B TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5267B IR LF 0038
Text: 3IÌB5 TZQ5221B - TZQ5267B 500mW SURFACE MOUNT ZENER DIODE LITEMZI POWER SEMICONDUCTOR y Features • • • • • 500m W Power Dissipation High Stability Low Noise Outline Similar to JED EC D O -213AA Hemetic Package Mechanical Data_ •
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TZQ5221B
TZQ5267B
500mW
DO-213AA
MIL-STD-202,
200mA
175nt
DS30014
TZQ5221B-TZQ5267B
DO-213AA
TZQ5222B
TZQ5223B
TZQ5224B
TZQ5225B
TZQ5267B
IR LF 0038
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PDF
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BZM5221B
Abstract: BZM5222B BZM5223B BZM5224B BZM5225B BZM5226B BZM5267B
Text: BZM5221B - BZM5267B VISHAY 500mW SURFACE MOUNT ZENER DIODE LITEMZI y POWER SEMICONDUCTOR Features 500m W Power Dissipation High Stability Low Noise Fits onto S O D 323/S O T 23 Foot Print Hemetic Package Mechanical Data Case: MicroMELF Terminals: Solderable per M IL-STD-202,
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BZM5221B
BZM5267B
500mW
OD323/SOT23
MIL-STD-202,
200mA
DS30015
BZM5221B-BZM5267B
BZM5222B
BZM5223B
BZM5224B
BZM5225B
BZM5226B
BZM5267B
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PDF
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