Untitled
Abstract: No abstract text available
Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery
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DMN3730U
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C
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DMN2300U
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification
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BSS138
J-STD-020
MIL-STD-202,
AEC-Q101
DS30144
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Untitled
Abstract: No abstract text available
Text: ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Fast Switching Speed 80mΩ@ VGS = -10V -4.0A • 4.5V Gate Drive Capability 140mΩ@ VGS =-4.5V ⎯ • Thermally Enhanced SOT23 package •
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ZXMP3F30FH
AEC-Q101
DS33579
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DMN3730U-7
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V
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DMN3730U
AEC-Q101
DS35308
DMN3730U-7
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V
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DMN2300U
AEC-Q101
DS35309
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Untitled
Abstract: No abstract text available
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Features and Benefits Product Summary V BR DSS • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V
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DMN3730U
AEC-Q101
DS35308
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DMN65D8L-7
Abstract: No abstract text available
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
DMN65D8L-7
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DMN65D8L-7
Abstract: dmn65d8l
Text: DMN65D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package 3Ω @ VGS = 10V 60V SOT23 ID TA = +25°C 310mA 270mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8L
310mA
270mA
AEC-Q101
DS35923
DMN65D8L-7
dmn65d8l
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V
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DMN2300U
AEC-Q101
DS35309
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MOSFET TRANSISTOR SMD MARKING CODE nh
Abstract: No abstract text available
Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV160UP
O-236AB)
MOSFET TRANSISTOR SMD MARKING CODE nh
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transistor smd code marking 420
Abstract: No abstract text available
Text: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV30XN
O-236AB)
transistor smd code marking 420
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV37EN 30 V, 3.1 A N-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV37EN
O-236AB)
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FP6736
Abstract: FP6736S5P marking code C4 Sot 23-5 sot-23-5 marking cy sot-23-5 5R STEP UP DC DC SOT-23-6 FP6736S6 sot-23-6 marking MOSFET P SOT-23-6 marking E1 sot236
Text: FP6736 85T Current-Mode fitipower integrated technology lnc. 1.4MHz SOT23 Step-Up DC/DC Converter Description Features The FP6736 is a current-mode, pulse-width modulation and step-up DC/DC converter. The built-in high voltage N-channel MOSFET allows FP6736 for step-up applications with up to 30V
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FP6736
OT-23-5,
OT-23-6,
TSOT-23-6
MO-178-C.
FP6736-1
FP6736S5P
marking code C4 Sot 23-5
sot-23-5 marking cy
sot-23-5 5R
STEP UP DC DC SOT-23-6
FP6736S6
sot-23-6 marking
MOSFET P SOT-23-6
marking E1 sot236
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Untitled
Abstract: No abstract text available
Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV185XN
O-236AB)
gate-sou15
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Untitled
Abstract: No abstract text available
Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV90EN
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV28UN
O-236AB)
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TRANSISTOR SMD MARKING CODE 1 KW
Abstract: No abstract text available
Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV20XN
O-236AB)
TRANSISTOR SMD MARKING CODE 1 KW
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Untitled
Abstract: No abstract text available
Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
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PMV32UP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
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PMV48XP
O-236AB)
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Untitled
Abstract: No abstract text available
Text: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV170UN
O-236AB)
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CBAS17
Abstract: No abstract text available
Text: Central Sem iconductor Corp. CBAS17 LOW V O LT A G E STABISTOR DESCRIPTION: T h e C E N T R A L S E M IC O N D U C T O R C B A S 1 7 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91.
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CBAS17
OT-23
TheCENTRALSEMICONDUCTORCBAS17
100mA
000171b
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