philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
|
Original
|
1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
|
PDF
|
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
|
Original
|
1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
|
PDF
|
C157
Abstract: transistor a918 Q62702-A918
Text: BAT 17-07 Silicon Schottky Diode ● ● For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code tape and reel Pin Configuration 1 2 3 4 Marking Package BAT 17-07 Q62702-A918 C1 57 SOT-143 C2 A2 A1 Maximum Ratings Parameter
|
Original
|
Q62702-A918
OT-143
C157
transistor a918
Q62702-A918
|
PDF
|
smd dual diode code A7
Abstract: smd diode marking A7 SOT-23 smd marking a7 smd diode a7 smd code A7 A7 SMD sot23 Code sot-23 on semiconductor marking a7 smd dual diode code 68 CMBD226 A7 I SOT-23
Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR DUAL SWITCHING DIODE 3 CMBD226 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking Code A7
|
Original
|
CMBD226
OT-23
C-120
CMBD226Rev300802E
smd dual diode code A7
smd diode marking A7 SOT-23
smd marking a7
smd diode a7
smd code A7
A7 SMD sot23
Code sot-23 on semiconductor marking a7
smd dual diode code 68
CMBD226
A7 I SOT-23
|
PDF
|
smd dual diode code A7
Abstract: smd code A7 smd diode marking A7 SOT-23 smd marking a7 smd dual diode code 68 A7 SMD sot23 Code sot-23 on semiconductor pdf marking a7 SMD a7 Transistor smd diode marking 77 smd marking A7 SOT-23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE 3 CMBD226 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking Code A7 Ultra High-Speed Dual Switching Diodes in Series
|
Original
|
CMBD226
OT-23
C-120
CMBD226Rev300802E
smd dual diode code A7
smd code A7
smd diode marking A7 SOT-23
smd marking a7
smd dual diode code 68
A7 SMD sot23
Code sot-23 on semiconductor pdf marking a7
SMD a7 Transistor
smd diode marking 77
smd marking A7 SOT-23
|
PDF
|
XTR1N0850
Abstract: XTR1N0800 XTR1N0815-BD
Text: XTRM Series XTR1N0800 IE W HIGH-TEMPERATURE, 80V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 90V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0815: IF=165mA per diode. o XTR1N0850: IF=570mA per diode.
|
Original
|
XTR1N0800
XTR1N0815:
165mA
XTR1N0850:
570mA
740mV
720mV
XTR1N0800
XTR1N0850
XTR1N0815-BD
|
PDF
|
IRF3710SPBF
Abstract: TP1100 IRF3710LPBF IRF3710S
Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A
|
Original
|
IRF3710SPbF
IRF3710LPbF
of626)
EIA-418.
TP1100
IRF3710LPBF
IRF3710S
|
PDF
|
IRF3710SPBF
Abstract: AN-994 IRF3710 IRF3710L IRL3103L IRF3710LPBF IRF3710S
Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A
|
Original
|
IRF3710SPbF
IRF3710LPbF
EIA-418.
IRF3710SPBF
AN-994
IRF3710
IRF3710L
IRL3103L
IRF3710LPBF
IRF3710S
|
PDF
|
IRF3710SPBF
Abstract: IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S
Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A
|
Original
|
IRF3710SPbF
IRF3710LPbF
EIA-418.
IRF3710SPBF
IRF3710
IRF3710L
AN-994
IRL3103L
IRF3710LPBF
IRF3710S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PPJA3415 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -4.0A Current SOT-23 Unit : inch mm Features RDS(ON) , [email protected], [email protected]<57mΩ RDS(ON) , [email protected], [email protected]<70mΩ RDS(ON) , [email protected], [email protected]<95mΩ Advanced Trench Process Technology
|
Original
|
PPJA3415
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
|
PDF
|
DMN3112S
Abstract: marking ANs J-STD-020D
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V
|
Original
|
DMN3112S
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31445
DMN3112S
marking ANs
J-STD-020D
|
PDF
|
marking TAW
Abstract: 4 pin hall marking code 6 SEIKO Product Code SEIKO MARKING CODE unipolar transistor magnetic sensor seiko 100 s chip MP003-C-P-SD-1
Text: S-5713A Series HIGH-SPEED UNIPOLAR DETECTION TYPE HALL IC www.sii-ic.com Rev.3.0_00 Seiko Instruments Inc., 2009-2010 The S-5713A Series, developed by CMOS technology, is a unipolar detection type Hall IC with high-speed detection. The output voltage changes when the S-5713A Series detects the intensity level of flux density and a polarity. Using the
|
Original
|
S-5713A
OT-23-3
marking TAW
4 pin hall marking code 6
SEIKO Product Code
SEIKO MARKING CODE
unipolar transistor magnetic sensor
seiko 100 s chip
MP003-C-P-SD-1
|
PDF
|
DIODE marking S6 57
Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
DIODE marking S6 57
DIODE marking S4 57
smd diode code s1 96
GMM3x60-015X1
DIODE marking S6 96
smd diode .S6 22
smd diode S4 96
smd diode g6
Control of Starter-generator
S4 DIODE
|
PDF
|
SMD mosfet MARKING code TC
Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
SMD mosfet MARKING code TC
smd diode g6
SMD MARKING CODE s4
IF110
diode L2 smd
smd diode code g3
smd diode code g6
smd diode marking code L2
Control of Starter-generator
DIODE marking S6 57
|
PDF
|
|
|
smd diode g6
Abstract: marking G3 IF110 GMM3x60-015X1
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
smd diode g6
marking G3
IF110
GMM3x60-015X1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
|
Original
|
GMM3x60-015X2
IF110
ID110
3x60-015X2
3x60-015X2
|
PDF
|
IRF3710L
Abstract: AN-994 IRF3710 IRF3710S IRF530S
Text: PD - 94201 IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description
|
Original
|
IRF3710S
IRF3710L
IRF3710L
AN-994
IRF3710
IRF3710S
IRF530S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.1_00 Seiko Instruments Inc., 2011-2012 The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.
|
Original
|
S-5725
OT-23-3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code
|
OCR Scan
|
114-099R
Q62702-A1006
OT-143
EHA07C
E35bG5
D15G3Ã
DlED30*
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 52 S5s Q62702-B632 1 = A1 Package 2 = A2
|
OCR Scan
|
Q62702-B632
OT-23
H35bDS
02BSbOS
BBY52
aE35b05
|
PDF
|
marking 513 SOD-323
Abstract: No abstract text available
Text: S IE M E N S BBY 51-03W Silicon Tuning Diode 1 1 1 High Q hyperabrupt tuning diode Designed for low tuning voltage operation For V C O 's in mobile communications equipment Type B B Y 51-03W Marking H Ordering Code tape and reel Pin Configuration Q62702-B663
|
OCR Scan
|
1-03W
Q62702-B663
OD-323
fi235bt
marking 513 SOD-323
|
PDF
|
diode a57 schottky
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 17-07 • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT 17-07 Pin Configuration Ordering Code tape and reel 1 Q62702-A918 C1 2 C2 3 4 A2 A1 Marking Package 57 SOT-143 Maximum Ratings
|
OCR Scan
|
Q62702-A918
OT-143
235b05
fl23SbOS
ae3Sb05
diode a57 schottky
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D • fl23L.32Q 0Qlb57b T H S I P Silicon Tuning Diode ~ T - 0 'i ^ ^ .SIEMENS/ SPCL-. SEMICONDS For Hyperband TV/VTR tuners. Bd I BB 620 _:_ Cathode B B620 Type Ordering code Q62702-B403 Marking red/S Maximum ratings Reverse voltage
|
OCR Scan
|
fl23L
0Qlb57b
Q62702-B403
23b32Ã
T-07-19
capac150
|
PDF
|
st Diode marking EE
Abstract: No abstract text available
Text: ERC81-004 2.6A Ifl-JUN'Sc : Outline Drawings SCHOTTKY BARRIER DIODE Features I^Tjv : Marking L ow V F * 7 - 3 - K rta S u p e r h ig h sp ee d s w itc h in g . Color code : S ilver • T V — t - S iB l-iS B ftS tt H ig h reliability by p la n e r d e s ig n .
|
OCR Scan
|
ERC81-004
ERC81
st Diode marking EE
|
PDF
|
