DA QG
Abstract: No abstract text available
Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R , ? >=1G .&- Y" I9 0( 6 P S ? @5A1C 9>7 C 5=@5A1C
|
Original
|
PDF
|
IPB065N06L
IPP065N06L
DA QG
|
BC519
Abstract: 81a diode
Text: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
|
Original
|
PDF
|
IPB070N06N
IPP070N06N
IPI070N06N
BC519
81a diode
|
Diode Marking C.3
Abstract: da5 diode DA5 marking 5411C
Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J .&/ Y" 0( 6 P S ? @5A1C
|
Original
|
PDF
|
IPB070N06L
IPP070N06L
Diode Marking C.3
da5 diode
DA5 marking
5411C
|
IPB085N06L
Abstract: da5 diode marking 4rt IPB085N06L G
Text: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J 0&* Y" 0( 6 P S ? @5A1C
|
Original
|
PDF
|
IPB085N06L
IPP085N06L
da5 diode
marking 4rt
IPB085N06L G
|
DA5 diode
Abstract: No abstract text available
Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< E5AB9 ?> I9 .( J Y" /0 6 P S ? @5A1C
|
Original
|
PDF
|
IPB110N06L
IPP110N06L
DA5 diode
|
IPB065N15N3
Abstract: 5F040 ED 05 Diode marking EB5
Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H -( J R , ? >=1H-( .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
|
Original
|
PDF
|
IPB065N15N3
7865AE5
5F040
ED 05 Diode
marking EB5
|
55b9
Abstract: 55b9 sot23-5
Text: IPB025N08N3 G 3 Power-Transistor Product Summary Features V 9H 0 J Q' 381>>5<>?B=1<<5F5< R 9H"[Z#$YMd *&- Y QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D (& I9 *( 6 @B5F9?EC5>79>55B9>7 C1=@<53?45 ?E7(*8C(0C
|
Original
|
PDF
|
IPB025N08N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
55b9
55b9 sot23-5
|
Untitled
Abstract: No abstract text available
Text: IPB027N10N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5
|
Original
|
PDF
|
IPB027N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
|
Untitled
Abstract: No abstract text available
Text: BSC360N15NS3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5
|
Original
|
PDF
|
BSC360N15NS3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
|
IPB025N10N3
Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH
|
Original
|
PDF
|
IPB025N10N3
IPB025
b1c diode
marking a5 4r diode
marking a5 4r
diode b1c
|
Untitled
Abstract: No abstract text available
Text: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5 Q)2 6B55<514@<1D9>7+?",3?=@<91>D
|
Original
|
PDF
|
IPA075N15N3
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
|
Untitled
Abstract: No abstract text available
Text: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H -( J R ,?>=1H-( /&* Y I9 )( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z#
|
Original
|
PDF
|
IPB072N15N3
IPP075N15N3
IPI075N15N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
|
Untitled
Abstract: No abstract text available
Text: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H )*&* Y I -1 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5
|
Original
|
PDF
|
IPD122N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
|
Untitled
Abstract: No abstract text available
Text: IPA105N15N3 G TM 3 Power-Transistor Product Summary Features P' 381>>5<>?A=1<<5E5< PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C & V 9H -( J R ,?>=1G )(&- Y I9 +/ 6 P.5AH<?F?> A5B9BC1>35R 9H"[Z# P S?@5A1C9>7C5=@5A1CDA5
|
Original
|
PDF
|
IPA105N15N3
381A75à
C1A75Cà
931C9?
C85AF9B5à
|
|
CCD MARKING
Abstract: No abstract text available
Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $
|
Original
|
PDF
|
IPA075N15N3
CCD MARKING
|
Untitled
Abstract: No abstract text available
Text: IPD180N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H-( )0 Y I ,+ 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z#
|
Original
|
PDF
|
IPD180N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
|
Untitled
Abstract: No abstract text available
Text: BSZ440N10NS3 G 3 Power-Transistor Product Summary Features V 9H J R 9H"[Z#$YMd , Y Q(@D9=9J546?B43 433?>F5BC9?> I9 )0 6 Q' 381>>5<>?B=1<<5F5< E=%IH9HDC%0
|
Original
|
PDF
|
BSZ440N10NS3
381B75à
931D9?
D1B75Dà
|
Untitled
Abstract: No abstract text available
Text: IPB036N12N3 G 3 Power-Transistor Product Summary Features Q#451<6?B89786B5AE5>3ICG9D389>71>4 3?>F5BD5BC QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H *( J R 9H"[Z#$YMd +&. Y I9 )0( 6 Q.5BI<?G?> B5C9CD1>35+9H"[Z#
|
Original
|
PDF
|
IPB036N12N3
381B75à
CG9D389
D5CD54
D1B75Dà
931D9?
D85BG9C5à
|
B1C DIODE
Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Text: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH
|
Original
|
PDF
|
IPB039N10N3
B1C DIODE
marking 1c
marking a5 4r diode
|
Untitled
Abstract: No abstract text available
Text: IPB039N10N3 G 3 Power-Transistor Product Summary Features P' 381>>5<>?A=1<<5E5< PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P.5AH<?F?> A5B9BC1>35R 9H"[Z# P"9783DAA5>C31@129<9CH
|
Original
|
PDF
|
IPB039N10N3
381A75à
C1A75Cà
931C9?
C85AF9B5à
|
Untitled
Abstract: No abstract text available
Text: IPA086N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H 0&. Y I9 ,- 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5
|
Original
|
PDF
|
IPA086N10N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
|
Untitled
Abstract: No abstract text available
Text: IPB065N15N3 G 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H -( J R ,?>=1H-( .&- Y I9 )+( 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z#
|
Original
|
PDF
|
IPB065N15N3
381B75à
D1B75Dà
931D9?
CG9D389
B53D96931D9?
D85BG9C5à
|
Untitled
Abstract: No abstract text available
Text: IPB031NE7N3 G TM 3 Power-Transistor Product Summary Features ?> Q#451<6?B89786B5AE5>3ICG9D389>71>4 3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D (&
|
Original
|
PDF
|
IPB031NE7N3
B53D96931D9?
CG9D389
381B75à
D5CD54
D1B75Dà
931D9?
|
diode B14A
Abstract: B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode
Text: MIL SPECS IC|D00D15S 0D00L.S2 S | « 1^ - 19500/91 31^ A»eod»cnt 1 1 M y i960 KXLITARI STFEUFICATIO SDdCOOTWCTOT DEVICE DIODE, SILICOTI, POWER RECTIFUR TXTE W2153 Thla Ancndment forme a part of Military ' Specification KIL-S-19500/9HS1kC j, 2 No t 59 Page 1, paragraph 1.1 table., (l (surge) column: Delete "50" pertaining to
|
OCR Scan
|
PDF
|
0000bS2
KIL-S-195O0/9l
1JJ2I53
KIL-S-19500/91
N2I53
diode B14A
B14A
B14A diode
crystal diode
if6 hall
hall o4E
DIODO LK
diodo FAG 50
FAG 50 diode
FAG 32 diode
|