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    DIODE MARKING 9H Search Results

    DIODE MARKING 9H Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING 9H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DA QG

    Abstract: No abstract text available
    Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C


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    PDF IPB065N06L IPP065N06L DA QG

    BC519

    Abstract: 81a diode
    Text: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C


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    PDF IPB070N06N IPP070N06N IPI070N06N BC519 81a diode

    Diode Marking C.3

    Abstract: da5 diode DA5 marking 5411C
    Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C


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    PDF IPB070N06L IPP070N06L Diode Marking C.3 da5 diode DA5 marking 5411C

    IPB085N06L

    Abstract: da5 diode marking 4rt IPB085N06L G
    Text: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J 0&* Y" 0( 6 P   S ? @5A1C


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    PDF IPB085N06L IPP085N06L da5 diode marking 4rt IPB085N06L G

    DA5 diode

    Abstract: No abstract text available
    Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J Y" /0 6 P   S ? @5A1C


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    PDF IPB110N06L IPP110N06L DA5 diode

    IPB065N15N3

    Abstract: 5F040 ED 05 Diode marking EB5
    Text: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D


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    PDF IPB065N15N3 7865AE5 5F040 ED 05 Diode marking EB5

    55b9

    Abstract: 55b9 sot23-5
    Text: IPB025N08N3 G  3 Power-Transistor Product Summary Features V 9H 0 J Q฀' 381>>5<฀>?B=1<฀<5F5< R 9H"[Z#$YMd *&- Y Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (& I9 *( 6 @B5F9?EC฀5>79>55B9>7฀ C1=@<5฀3?45 ?E7(*8C(0C


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    PDF IPB025N08N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? 55b9 55b9 sot23-5

    Untitled

    Abstract: No abstract text available
    Text: IPB027N10N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPB027N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: BSC360N15NS3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀  ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF BSC360N15NS3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    IPB025N10N3

    Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
    Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


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    PDF IPB025N10N3 IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c

    Untitled

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5 Q฀)2 6B55฀<514฀@<1D9>7฀+?",฀3?=@<91>D


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    PDF IPA075N15N3 D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( /&* Y I9 )( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPB072N15N3 IPP075N15N3 IPI075N15N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9?

    Untitled

    Abstract: No abstract text available
    Text: IPD122N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )*&* Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPA105N15N3 G TM  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H -( J R ,?>=1G฀ )(&- Y I9 +/ 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀ ฀S฀?@5A1C9>7฀C5=@5A1CDA5


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    PDF IPA105N15N3 381A75à C1A75Cà 931C9? C85AF9B5à

    CCD MARKING

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $    


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    PDF IPA075N15N3 CCD MARKING

    Untitled

    Abstract: No abstract text available
    Text: IPD180N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀-( ฀ )0 Y I ฀ ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPD180N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: BSZ440N10NS3 G  3 Power-Transistor Product Summary Features V 9H J R 9H"[Z#$YMd , Y Q฀(@D9=9J54฀6?B฀43 43฀3?>F5BC9?> I9 )0 6 Q฀' 381>>5<฀>?B=1<฀<5F5< E=%IH9HDC%0


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    PDF BSZ440N10NS3 381B75à 931D9? D1B75Dà

    Untitled

    Abstract: No abstract text available
    Text: IPB036N12N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H *( J R 9H"[Z#$YMd +&. Y I9 )0( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀฀+9H"[Z#


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    PDF IPB036N12N3 381B75à CG9D389 D5CD54 D1B75Dà 931D9? D85BG9C5à

    B1C DIODE

    Abstract: IPB039N10N3 marking 1c marking a5 4r diode
    Text: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH


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    PDF IPB039N10N3 B1C DIODE marking 1c marking a5 4r diode

    Untitled

    Abstract: No abstract text available
    Text: IPB039N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH


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    PDF IPB039N10N3 381A75à C1A75Cà 931C9? C85AF9B5à

    Untitled

    Abstract: No abstract text available
    Text: IPA086N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ 0&. Y I9 ,- 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPA086N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPB065N15N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( .&- Y I9 )+( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPB065N15N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPB031NE7N3 G TM  3 Power-Transistor Product Summary Features ?> Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&


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    PDF IPB031NE7N3 B53D96931D9? CG9D389 381B75à D5CD54 D1B75Dà 931D9?

    diode B14A

    Abstract: B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode
    Text: MIL SPECS IC|D00D15S 0D00L.S2 S | « 1^ - 19500/91 31^ A»eod»cnt 1 1 M y i960 KXLITARI STFEUFICATIO SDdCOOTWCTOT DEVICE DIODE, SILICOTI, POWER RECTIFUR TXTE W2153 Thla Ancndment forme a part of Military ' Specification KIL-S-19500/9HS1kC j, 2 No t 59 Page 1, paragraph 1.1 table., (l (surge) column: Delete "50" pertaining to


    OCR Scan
    PDF 0000bS2 KIL-S-195O0/9l 1JJ2I53 KIL-S-19500/91 N2I53 diode B14A B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode