Diode LT 02 KE
Abstract: LT-44 triangle KDI LT-62 lt 100 p LT-35 LT-38 LT-42 LT/SG3527A LT-49
Text: DIODE LIMITER SERIES LT 0.1-18 GHz GENERAL INFORMATION The LT ser ies high speed Diode Limiters receiver protectors are used at the input of sensiti v e receiv ers in order to protect them against accidental b urnout causedb y high levels of CW or pulsed op wer. Most mod els areb uilt i n “air free” solid dielectr ic str iplin e, and can there
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MIL-E-5400
LT-62
LT-68
LT-76
LT-82
LT-83
Diode LT 02 KE
LT-44
triangle KDI
LT-62
lt 100 p
LT-35
LT-38
LT-42
LT/SG3527A
LT-49
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LT-44
Abstract: IC STR Diode LT 02 KE LT-35 LT-59 Diode LT 44 LT-52 diode LT 42 LT/SG3527A LT-38
Text: DIODE LIMITER SERIES LT 0.1-18 GHz GENERAL INFORMATION The LT ser ies high speed Diode Limiters receiver protectors are used at the input of sensiti v e receiv ers in order to protect them against accidental b urnout causedb y high levels of CW or pulsed op wer. Most mod els areb uilt i n “air free” solid dielectr ic str iplin e, and can there
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MIL-E-5400
LT-59
LT-62
LT-68
LT-76
LT-82
LT-83
LT-44
IC STR
Diode LT 02 KE
LT-35
LT-59
Diode LT 44
LT-52
diode LT 42
LT/SG3527A
LT-38
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LT 007
Abstract: diode LT 42 LT-62 LT/SG3527A lt 68 DIODE LT-35 LT-38 LT-42 LT-44 LT-49
Text: DIODE LIMITER SERIES LT 0.1-18 GHz GENERAL INFORMATION The LT ser ies high speed Diode Limiters receiver protectors are used at the input of sensiti v e receiv ers in order to protect them against accidental b urnout causedb y high levels of CW or pulsed op wer. Most mod els areb uilt i n “air free” solid dielectr ic str iplin e, and can there
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MIL-E-5400
LT-59
LT-62
LT-68
LT-76
LT-82
LT-83
LT 007
diode LT 42
LT-62
LT/SG3527A
lt 68 DIODE
LT-35
LT-38
LT-42
LT-44
LT-49
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4321F
Abstract: TG12 LT432
Text: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and
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LT4321
RJ-45
LT4321
LTC4355
LTC4359
LTC4290/LTC4271
4321f
com/LT4321
4321F
TG12
LT432
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749022016
Abstract: 749022017 SMBJ58A
Text: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over
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DC2093A
LT4275/LT4321
LT4321,
DC2093A
DC2093A-A,
DC2093A-B,
DC2093A-C
DC2093A-A
LT4275A
dc2093af
749022016
749022017
SMBJ58A
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Step-up 12V to 36V 300mA
Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Text: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The
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LT3473/LT3473A
3473/LT3473A
50mm2.
LT3471
LT3479
TSSOP-16E
3473f
Step-up 12V to 36V 300mA
LT3473
LT3473A
LT3473AEDE
LT3473EDD
LTC3473A
ltc3436
3473
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1009I
Abstract: LT1009CZ LT317A 1009f 406p LT1019 LM136 LT1009 LT1009CH LT1009I
Text: LT1009 Series 2.5V Reference FEATURES DESCRIPTION n The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference
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LT1009
LM136
LT1236
LT1460
10ppm/
OT-23
LT1634
LT1461
1009ff
1009I
LT1009CZ
LT317A
1009f
406p
LT1019
LT1009CH
LT1009I
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Untitled
Abstract: No abstract text available
Text: LT1311 Quad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for Optical Disk Drives U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1311 is a quad current-to-voltage converter designed for the demanding requirements of photo diode
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LT1311
12MHz,
145ns
LT1311
14-Lead
20mV/Â
250nA
LT1169
LT1213/LT1214
28MHz,
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ltg2
Abstract: LT3464ETS8
Text: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect
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LT3464
115mA,
OT-23
3464f
LMK107
BJ105MA-T
GMK212
BJ334MG-T
BJ224MG-T
ltg2
LT3464ETS8
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12v to 3.7v converter data sheet 2a
Abstract: ltc 3681 DE14MA 0.47mf 5.5v nec 24v active clamp forward converter 3.7v 1500mA battery Schottky diode low voltage g14 DIODE schottky marking ida sot-23 MARKING TRANSISTOR BD RC
Text: LT3681 36V, 2A, 2.8MHz Step-Down Switching Regulator with Integrated Power Schottky Diode U FEATURES DESCRIPTIO • The LT 3681 is an adjustable frequency 300kHz to 2.8MHz monolithic buck switching regulator that accepts input voltages up to 34V (36V maximum). A high efficiency
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LT3681
300kHz
LT3681
QFN-24
TSSOP16E
LT3684
850mA,
DFN-10
MSOP10E
LT3685
12v to 3.7v converter data sheet 2a
ltc 3681
DE14MA
0.47mf 5.5v nec
24v active clamp forward converter
3.7v 1500mA battery
Schottky diode low voltage
g14 DIODE schottky marking
ida sot-23
MARKING TRANSISTOR BD RC
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ltg2
Abstract: LQH32CN470K LEMC3225 LT3464ETS8 BJ105MA-T murata lqh32cn470k ELJPA470KF LQH32CN220K53 LQH32CN470K53 LQH32CN680K53
Text: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect
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LT3464
OT-23.
40mm2.
LT3464
115mA
LTC3400/
LTC3400B
600mA
LTC3401
LTC3402
ltg2
LQH32CN470K
LEMC3225
LT3464ETS8
BJ105MA-T
murata lqh32cn470k
ELJPA470KF
LQH32CN220K53
LQH32CN470K53
LQH32CN680K53
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Collmer SC
Abstract: No abstract text available
Text: FUJI SMD RECTIFIER DIODE LIST SBD FAMILY -» i PACKAGE LLD 90 VO LT 60 VO LT 45 VO LT 200 VO LT 300 VO LT FRD GENERAL 200 - 600 VO LT 200 - 600 VO LT S C 311 -4 ,6 SC SINGLE SC 802-04 1A SINGLE K S 826S 04 5A DUAL KS823C04 5A SC802-O6 KS826S06 1A SC 802-09
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KS823C04
SC802-O6
KS826S06
S826S09
KS926S2
KS923C2
100nS
TS902C2
400nS
KS823C09
Collmer SC
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lt 68 DIODE
Abstract: Diode LT 45 LT76 DIODE Diode LT 44 LT/SG3527A
Text: DIODE LIMITER SERIES LT 0.1-18 GHz GENERAL INFORMATION The LT series high speed Diode Lim iters receiver protectors are used at the input of sensitive receivers in order to protect them against acci dental burnout caused by high levels of CW or pulsed power. M ost m od
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IL-E-5400
lt 68 DIODE
Diode LT 45
LT76 DIODE
Diode LT 44
LT/SG3527A
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diode LT 42
Abstract: Diode LT 44 lt 68 DIODE LT-55 kdi lt-49 LT-59 LT/SG3527A
Text: DIODE LIMITER SERIES LT 0.1-18 GHz GENERAL INFORMATION The LT s e ies high speed Diode Lim iters receiver protectors are used at the input of sensiti e recev ers in order to protect them against acci dental b u rn o u t caused) y high levels of CW or pulsedqn wer. M ost mad els areb uilt i n “air free "solid dieleat icstrip lin e , and can therfe ore handle
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IL-E-5400
diode LT 42
Diode LT 44
lt 68 DIODE
LT-55
kdi lt-49
LT-59
LT/SG3527A
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IR E78996
Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20
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IRKH136-14D20
IRKH136-16D25
IRKH142-14D20
IRKH142-16D25
IRKH142-18D28
IRKH142-20D32
IRKH162-14D20
IRKH162-16D25
170-14D20
IRKH170-16D25
IR E78996
E78996 rectifier module
E78996 Diode
E78996
E78996 IR
14D20
IR E78996 135
KL23014
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Untitled
Abstract: No abstract text available
Text: Diodes Schottky Barrier Diode RB500V-40 •Applications current rectification External dimensions Units: mm Low CATHODE MARK 1)Designed for mounting on small surface areas (UMD2) 2 2)High reliability Schottky barrier diodes •Features ! lT v ^ 0.310.05
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RB500V-40
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LT 0216 diode
Abstract: 20/LT 0216 diode Diode LT 410
Text: SGS-THOMSON ;[Li MM D(S MDS50 DIODE / THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ lT(AV) = 35 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for
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MDS50
MDS50
LT 0216 diode
20/LT 0216 diode
Diode LT 410
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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S60SC4MT
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode • fttg H Package S60SC4MT ' n^hkiVXW 40V 60A OUTLINE MTO-3PT Unit; mm Weight 5.2k Typ) - Feature • T j= 1 50 TC Tj=150°C • 9 jc lf t lt ô U Small 8 jc High lo Rating Main Use Switching Regulator DC/DC Converter Home Appliance, Game, Office Automation
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S60SC4MT
CJ533-1
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DD100HB160
Abstract: 1S43 DF30CA DF60A df30aa
Text: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800
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DF20AA
DF20BA
DF20CA
DF20DB
DF30AA
DF30BA
DF30CA
DF30DB
DG20AA
SDF2000B
DD100HB160
1S43
DF60A
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diode lt 341
Abstract: MICRO ELECTRONICS ltd transistor
Text: MICRO ELEC TRONICS LT» MIE D bOWûfl aüO[H7ô ñ C 3 MEHK MIC31TH INFRARED EMITTING DIODE MIC31TH is a GaAlAs infrared emitting diode molded in clear 3mm 0 package. With the lensing effect of the package, it has an narrow radiation angle measured from the optical axis to the half power
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MIC31TH
MIC31TH
MEL81.
1/16H
diode lt 341
MICRO ELECTRONICS ltd transistor
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DIODE 1N54
Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Text: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36
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1N34A
1N38A
1N38B
1N52A
1N54A
1N57A
1N58A
1N60A
1N63A
-100V
DIODE 1N54
1N60 germanium diode
1N34
1N542
1N48 diode
diode 1N69a
1n81a
1N75
1N68
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1N135
Abstract: diode 1n295 1n69 1N541 1N295 1N128 1N69A 1N69A diode diode 1N69a 1N295 diode
Text: CRIMSON S E M I CONDU CT OR INC dF | SSlIOÌt 0D003S0 7 2514096 C R IMSON S E M I C O N D U C T O R INC 99D 00350 D T'Ot'Ol GERMANIUM DIODE TYPE PEAK RE VE R SE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW AR D CURRENT A T 1 V O LT M A X IM U M
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0D003S0
1N66A
1N67A
-100V
1N68A
1N69A
1N70A
at-10V
1N81A
1N135
diode 1n295
1n69
1N541
1N295
1N128
1N69A diode
diode 1N69a
1N295 diode
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e
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