HFA35HB60
Abstract: No abstract text available
Text: PD-20379 HFA35HB60 HEXFRED TM Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VF = 1.75V
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PD-20379
HFA35HB60
290nC
HFA35HB60
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HFA35HB120
Abstract: No abstract text available
Text: PD-20370 HFA35HB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets
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PD-20370
HFA35HB120
HFA35HB120
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IRHM7250
Abstract: IRHM3250 IRHM4250 IRHM8250 JANSF2N7269 JANSR2N7269
Text: PD - 90674C IRHM7250 JANSR2N7269 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) RDS(on)
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90674C
IRHM7250
JANSR2N7269
O-254AA)
MIL-PRF-19500/603
IRHM3250
JANSF2N7269
IRHM4250
IRHM7250
IRHM3250
IRHM4250
IRHM8250
JANSF2N7269
JANSR2N7269
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IRHM8450
Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Text: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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0673A
IRHM7450
IRHM8450
JANSR2N7270
JANSH2N7270
500Volt,
1x106
IRHM8450
2N7270
IRHM7450
JANSH2N7270
JANSR2N7270
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1453a
Abstract: IRG4BC30UD ITT 451 DIODE
Text: PD 9.1453A IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC30UD
O-220AB
1453a
IRG4BC30UD
ITT 451 DIODE
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irf 460A
Abstract: IRF3710S IRF3710s equivalent mosfet irf3710 AN-994 IRF3710
Text: PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.028Ω G ID = 46A
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IRF3710S
irf 460A
IRF3710S
IRF3710s equivalent
mosfet irf3710
AN-994
IRF3710
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irf 460A
Abstract: IRF3710S AN-994 IRF3710
Text: Previous Datasheet Index Next Data Sheet PD 9.1310 IRF3710S PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRF3710S
irf 460A
IRF3710S
AN-994
IRF3710
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2n7425
Abstract: IRHM9160 IRHM93160 JANSF2N7425 JANSR2N7425 2N742
Text: PD - 91415D IRHM9160 IRHM93160 JANSR2N7425 JANSF2N7425 REPETITIVE AVALANCHE AND dv/dt RATED [REF: MIL-PRF-19500/660] HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.073Ω International Rectifier’s P-Channel RAD HARD technology
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91415D
IRHM9160
IRHM93160
JANSR2N7425
JANSF2N7425
MIL-PRF-19500/660]
2n7425
IRHM9160
IRHM93160
JANSF2N7425
JANSR2N7425
2N742
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diode bridge LT 405
Abstract: IRG4BC20UD
Text: PD 9.1449A IRG4BC20UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC20UD
O-220AB
diode bridge LT 405
IRG4BC20UD
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IRG4PC30UD
Abstract: 6000uf igbt 600V
Text: Previous Datasheet Index Next Data Sheet PD 9.1462 IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC30UD
O-247AC
IRG4PC30UD
6000uf
igbt 600V
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IRG4PC50FD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20
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IRG4PC50FD
O-247AC
IRG4PC50FD
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IRG4PC30UD
Abstract: No abstract text available
Text: PD 9.1462A IRG4PC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC30UD
O-247AC
IRG4PC30UD
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IRG4BC30UD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1453 IRG4BC30UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4BC30UD
O-220AB
IRG4BC30UD
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IRG4PC50FD
Abstract: diode 10a 400v CC
Text: PD 9.1469A IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC50FD
O-247AC
IRG4PC50FD
diode 10a 400v CC
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vaillant
Abstract: Future Electronique ITT Semiconductors SF00500 ITT DIODE 87 BKC Semiconductors F9222 nedis
Text: ITT Semiconductors Sales Offices / Distributors / Agents ITT Semiconductors Distributors / Agents France ITT Semiconductors France 157, rue des Blains F-92220 Bagneux Tel. 1 4 5 4 7 8 1 8 1 Fax (1 )4 5 4 7 8 3 9 2 Australia CRUSADER Electronic Components Pty. Ltd.
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F-92220
F-93230
D-90425
NL-2718
NL-5321
NL-5320
NL-5503
NL-3439
N-1081
vaillant
Future Electronique
ITT Semiconductors
SF00500
ITT DIODE 87
BKC Semiconductors
F9222
nedis
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Untitled
Abstract: No abstract text available
Text: bitemational [g»lRectifier HEXFET Power MOSFET • • • • • • • PD -9.1225 IRFD310 Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V d s s = 400V
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IRFD310
0G224bl
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CK1055
Abstract: aerd gas diode marking eB diode marking code EZ Raytheon Company ETD 2 PLUS subminiature tubes
Text: rÄ Tech.nical Information on TECHNICAL INFORM ATION CK1055 SUBMINIATURE GAS DIODE SER VIC E MECHANICAL DATA The C K 10 55 is a cold cathode, g a s - ti ll e d diode of sub mi niature c o n s tr u c ti o n , desig ne d for service as a v olt ag e re gulato r tube. It has an op erat in g cu rren t range of 75 to 300 microampe res over which
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CK1055
CK1055
500hours
aerd
gas diode
marking eB diode
marking code EZ
Raytheon Company
ETD 2 PLUS
subminiature tubes
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sla 4038
Abstract: 4008 ic for 8bit full adder 4094 bp 4014 bp 2W21 sla 4051 IC4116 4068 BP tc 4030 IC 4093 bp
Text: ¡7] 1. C2MOS Standard Package Components Features o f The C 2MOS 1 The TC4xxxB Series C2MOS are designed and manufactured with the ratings and characteristics defined by the EIA/JEDEC standards. Specifically, these include basic requirements such as: Compatibility with wide supply voltage range. (3V to 18V)
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TC74HxER
12-STATE
sla 4038
4008 ic for 8bit full adder
4094 bp
4014 bp
2W21
sla 4051
IC4116
4068 BP
tc 4030
IC 4093 bp
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SCR induction furnace circuit diagram
Abstract: schematic diagram power inverter 1500w schematic diagram inverter 2000w 1200W inverter "circuit diagram" sc146d Triac cross reference scr 106d 12v to 220v inverter schematic diagram 2000w 220v DC MOTOR SPEED CONTROLLER using opto coupler 12 volt dc to 220v ac inverter 1500w schematic diagram solar tracker circuits
Text: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , 0 .3 A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 150 A COLD
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Triac SC141D
Abstract: Opto triac ot 195 schematic diagram inverter 2000w schematic diagram power inverter 1500w 12v 1200W DC POWER SUPPLY SCHEMATIC scr 106d st4 diac solar tracking street light system schematic diagram of 2000W induction heater 400W sine wave inverter circuit diagram
Text: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , Q.3A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 1 BOA COLD
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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"MARKING SO-8"
Abstract: 201 319 TPP25011 TPP25012
Text: / I T TP P 25011 TP P 25012 S G S -T H O M S O N PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR AND CURRENT REGULATION FEATURES • UNIDIRECTIONAL FUNCTION ■ PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 250 V ■ PROGRAMMABLE CURRENT LIMITATION FROM 40 mA TO 500 mA ■ HIGH SURGE CURRENT CAPABILITY
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TPP25011
TPP25012
TPP250
TPP25012
TPP250
"MARKING SO-8"
201 319
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Untitled
Abstract: No abstract text available
Text: PD-5.045 International Iö R Rectifier IGBT SIP MODULE Features CPV362M4K Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 1 0 fis@ 125°C, \feE = 15V • Fully isolated printed circuit board mount package
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CPV362M4K
360Vdc,
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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