Untitled
Abstract: No abstract text available
Text: SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ B5818WS:SK B5819WS: SL - Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL - Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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B5817W
Abstract: B5818W B5819W Diode SJ Sj diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W
B5819W
Diode SJ
Sj diode
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Diode SJ 14
Abstract: DIODE marking Sl B5817WS-5819WS B5818WS B5819WS Diode SJ diode marking SJ B5817WS diode reverse voltage protection B5819WSSL
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
Diode SJ 14
DIODE marking Sl
B5817WS-5819WS
B5819WS
Diode SJ
diode marking SJ
B5817WS
diode reverse voltage protection
B5819WSSL
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B5817W-5819W
Abstract: DIODE marking Sl B5819W B5817W B5818W diode reverse voltage protection Schottky Diode 30V 1A SOD123 1A diode low reverse current
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE FEATURES + For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. - MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
B5817W-5819W
DIODE marking Sl
B5819W
B5817W
diode reverse voltage protection
Schottky Diode 30V 1A SOD123
1A diode low reverse current
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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Original
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PDF
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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Original
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PDF
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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Original
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PDF
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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PDF
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817WS: SJ
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Original
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PDF
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode B5817W-5819W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
B5817W-5819W
OD-123
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: NSR1020MW2 Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in
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NSR1020MW2
NSR1020MW2/D
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Untitled
Abstract: No abstract text available
Text: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
SC-70
AEC-Q101
SC-70
OT-323)
M1MA141WAT1G
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Untitled
Abstract: No abstract text available
Text: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
M1MA141WAT1/D
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Untitled
Abstract: No abstract text available
Text: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
M1MA141WKT1/D
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diode marking N9
Abstract: No abstract text available
Text: DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium.
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DAN222M3T5G
OT-723
631AA
DAN222M3/D
diode marking N9
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Untitled
Abstract: No abstract text available
Text: DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications, where board space is at a
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DAN222,
NSVDAN222
OT-416/SC-75
AEC-Q101
DAN222/D
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schottky diode FIT
Abstract: 74621 diode 5818 FIT rate failure rate
Text: Silicon Technology Reliability Vishay Siliconix SKYFET N-CHANNEL MOSFET AND SCHOTTKY DIODE ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 5818 1 264 846 965 0.719 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
28-Jul-08
schottky diode FIT
74621
diode 5818
FIT rate
failure rate
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514AA
Abstract: BAS16P2T5G
Text: BAS16P2T5G Switching Diode The BAS16P2T5G Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOD−923 surface mount package. This device is ideal for low−power surface mount applications, where board space is
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BAS16P2T5G
OT-23
OD-923
BAS16P2/D
514AA
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Untitled
Abstract: No abstract text available
Text: BAS16P2T5G Switching Diode The BAS16P2T5G Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOD−923 surface mount package. This device is ideal for low−power surface mount applications, where board space is
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BAS16P2T5G
OT-23
OD-923
BAS16P2/D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817W-5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ
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OD-123
OD-123
B5817W-5819W
B5817W:
B5818W
B5819W:
B5817W
B5818W
B5819W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS-5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications MARKING: B5817WS: SJ
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OD-323
B5817WS-5819WS
OD-323
B5817WS:
B5818WS
B5819WS:
B5817WS
B5818WS
B5819WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SOD-123 B5817LW-5819LW SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817LW: SJA
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OD-123
OD-123
B5817LW-5819LW
B5817LW:
B5818LW:
B5819LW:
B5817LW
B5818LW
B5819LW
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581 EL
Abstract: anode common fast recovery diode 30A PC30F8
Text: FAST RECOVERY DIODE MODULE 33A/800V/trr : 60nsec PC30F8 FEATURES ° Isolated Base ° Dual Diode Arms - Cathode Common ° Ultra - Fast Recovery ° High Surge Capability MAXIMUM R A T IN G S Approx. Net Weight : 105 Grains \ type Voltage Rating PC30F8 Unit Symbol"'-.
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3A/800V/trr
60nsec
PC30F8
D0D22Ã
bbl51i23
581 EL
anode common fast recovery diode 30A
PC30F8
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