Untitled
Abstract: No abstract text available
Text: SKM 600GA12T4 27 8& $ / Absolute Maximum Ratings Symbol Conditions IGBT , ; 27 8 ; 6C7 8 >+ 6233 D63 - E3 8 C33 - 6E33 - G 23 63 J 27 8 C37 - E3 8 7F3 - 6E33 - F2 3 - 733 - 9 3 :6C7 8 9 3 :627
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600GA12T4
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Untitled
Abstract: No abstract text available
Text: SKM 600GA12T4 27 8& $ / Absolute Maximum Ratings Symbol Conditions IGBT , ; 27 8 ; 6C7 8 >+ 6233 D63 - E3 8 C33 - 6E33 - G 23 63 J 27 8 C37 - E3 8 7F3 - 6E33 - F2 3 - 733 - 9 3 :6C7 8 9 3 :627
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600GA12T4
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Untitled
Abstract: No abstract text available
Text: SKM 150GB12T4 27 8$ " - Absolute Maximum Ratings Symbol Conditions IGBT * ; 27 8 ; 6>7 8 A 6233 2?3 + @3 8 6@3 + 73 + B 23 63 F 27 8 6C3 + @3 8 6 3 + 73 + C33 + 233 + 9 3 :6>7 8 9 3 :627
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150GB12T4
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BD3 diode
Abstract: 6n06e k4366
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS100B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
BD3 diode
6n06e
k4366
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Untitled
Abstract: No abstract text available
Text: SKiiP 16GH066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 5#0 > 5 #0 0 '& +6 ) '& 9:/; + 6. ) *&/ + ) '& 9:/; + 6. ) *:& + ) * . MiniSKiiP 1 H-bridge inverter SKiiP 16GH066V1
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16GH066V1
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diode b33
Abstract: DIODE ga 6c
Text: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 > % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications
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400GA124D
diode b33
DIODE ga 6c
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Untitled
Abstract: No abstract text available
Text: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 > % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications
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400GA124D
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diode 1233
Abstract: No abstract text available
Text: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 > % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications
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400GA124D
diode 1233
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Untitled
Abstract: No abstract text available
Text: SKM 400GA124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .< %!8 > % SEMITRANSTM 4 Low Loss IGBT Modules SKM 400GA124D , 5 13 D @D > 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications
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400GA124D
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6ca DIODE
Abstract: DIODE 6ca inverter 3 phase
Text: SKiiP 39AC066V4 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 6#1 > 6 #1 1 * '& ,7 * '& 9:0; , 7/ * +&0 , * '& 9:0; , 7/ * +:& , * + / MiniSKiiP 3 3-phase bridge inverter SKiiP 39AC066V4
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39AC066V4
6ca DIODE
DIODE 6ca
inverter 3 phase
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inverter 3 phase
Abstract: 6ca DIODE DIODE 6ca 39AC066V4
Text: SKiiP 39AC066V4 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter 6#1 > 6 #1 1 * '& ,7 * '& 9:0; , 7/ * +&0 , * '& 9:0; , 7/ * +:& , * + / MiniSKiiP 3 3-phase bridge inverter SKiiP 39AC066V4
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39AC066V4
FiC066V4
inverter 3 phase
6ca DIODE
DIODE 6ca
39AC066V4
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ga sot-89
Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Text: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C
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VPS05162
EHA07007
OT-89
EHB00094
EHB00095
EHB00096
EHB00097
ga sot-89
SOT89 marking GA
diode 78a
SOT89 marking GD
MARKING GA SOT-89
marking GC diode
baw 78b
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19J6
Abstract: 19EA8 19ez8 6bg6 19BG6-GA 19T8 6bg6ga 6BG6G 19AU4-GTA 6au4
Text: 19AU4-GTA 19BG6-GA 19CL8-A 19EA8 19EZ8 19J6 19T8 ^ gfotfW* TUBES ET-T934B Page 1 3-60 - DESCRIPTION AND RATING = = = = = = = = 19AU4-GTA Diode. Identical to the 6AU4-GTA except for heater ratings and addition of a controlled heater- warm-up characteristic. Refer to the 6AU4-GTA Description and Rating sheet for complete data.
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19AU4-GTA
19BG6-GA
19CL8-A
19EA8
19EZ8
ET-T934B
19B66-GA
19CL8-A
ET-T934A,
19J6
19EA8
19ez8
6bg6
19T8
6bg6ga
6BG6G
6au4
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SKM 300 GA 102 D
Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Text: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C
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13bb71
813bh71
DDD3717
39-3i
GA102
SKM 300 GA 102 D
si 13003 br
hc 13003
ml 13003
skm300ga122d
semikron diode 200a
DDG371B
SKM 300 CIRCUIT
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L1N08LE
Abstract: Rlp1N08le
Text: RLP1N08LE S e m ic o n d u c to r April 1999 Data Sheet File Num ber 2252.3 Features 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET • 1A, 80V T he R LP 1N 08L E is a s e m i-sm a rt m on olithic po w e r circu it w h ich in co rp o ra te s a lateral b ipo lar transistor, tw o resistors,
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RLP1N08LE
750i2
11E-3
23E-5)
54E-3
1e-30
32E-10
L1N08LE
Rlp1N08le
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2N6657
Abstract: 2N6658 VN66AF VN67AA 2N6656 VN64GA VN88AF VN-99-A 2N6657 siliconix IRF120
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
2N6657
2N6658
VN66AF
VN67AA
2N6656
VN64GA
VN88AF
VN-99-A
2N6657 siliconix
IRF120
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TLP573
Abstract: TLP575 ixp 400 75S-G TlP61 TLP641 TOSHIBA THYRISTOR DIODE ga 6c TA525 TLP641J
Text: TOSHIBA {DIS CR ETE/O PT O} ‘H 9097250 TOSHIBA <DISCRETE/OPTO> 99D D eT J ÌD17ESG 0017472 17472 D 7-HI-ZS TLP573 INFRARED L E D +P H O TO D IO D E + DARLINGTON TLP573 CAN CONTROL OC 1A. THIS UNIT tS A 9-LEAO OIP PACKAGE. • MOTOR CONTROL • ftC MACHINE
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D17ESG
TLP573
TLP573
250OV
E67349
Ta225
Ta525f
RHS60Z)
27kfl
TLP575
ixp 400
75S-G
TlP61
TLP641
TOSHIBA THYRISTOR
DIODE ga 6c
TA525
TLP641J
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1RF720
Abstract: VN64GA 1rf820 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142
Text: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35
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IRF150
IRF152
IRF140
IRF142
VN1000A
IRF130
VN1001A
IRF132
IRF120
IRF122
1RF720
VN64GA
1rf820
2N6658
IRF120
IRF122
IRF130
IRF132
IRF140
IRF142
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G118
Abstract: D123 G116 G117 G119 n channel enhancement MOSFET
Text: O N fflM G 1 1 6 -G 1 1 5 and 6-Channel MOS-FET Switches Military Series - 5 5 ° C t o + 1 2 5 °C GENERAL DESCRIPTION FEATURES These switches may be connected d ire ctly to the IN TE R S IL switch-driver D123 series w ith o u t need o f any interfacing
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G116-G11Â
-90VI
G118
D123
G116
G117
G119
n channel enhancement MOSFET
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3N81
Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
Text: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of
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Untitled
Abstract: No abstract text available
Text: 30E D NEC b 4S7SSS 002=1537 1 • ELECTRONICS INC LASER DIODE / NDL5008 1 200 nm O P T IC A L F IB E R C O M M U N IC A T IO N S InGaAsP DOUBLE H ETEROSTRUCTURE LA SER DIODE D E S C R IP T IO N N D L 5 0 0 8 is a long wavelength laser diode especially designed fo r long distance high capacity transm ission systems. The D C *
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NDL5008
b427525
002c123£
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IRFP9240
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFETS IRFP9240/9241 FEATURES • L o w e r R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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IRFP9240/9241
IRFP9240
-200V
IRFP9241
-150V
IRFP9240
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74HC123AN
Abstract: 74HC123AM 74HC123A
Text: A I R C H S eptem ber 1983 I L D Revised February 1999 S E M IC O N D U C T O R TM General Description p u t p u ls e e q u a tio n is s im p ly : P W = R e x t ( ^ e x t ) ! w h e re The M M 74H C 123A high speed m onostable m ultivibrators (one shots) utilize advanced silicon-gate C M OS te ch n ol
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MM74HC123A
MM74HC123A
74HC123AN
74HC123AM
74HC123A
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diagram 3 phase heater control
Abstract: diagram 3 phase heater 6cn7 reactance tube rs tube transistor+6cn
Text: 6 C N7 TUNOSOL D U P L E X - D IO D E T R IO D E M IN I A T U R E TYPE COATED UN I P O T E N T I A L CATHODE SE RI E S H EA TE R 6 . 3 + 0 . 6 VOLTS 3 0 0 MA. PARALLEL. 3 . 1 5 VOLTS 6 0 0 + 4 0 MA. AC OR DC ANY MOUNTING P O S I T I O N CONTROL OF A P P L I E S ONLY
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