KDS121E
Abstract: transistor ESM 30
Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC
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KDS121E
KDS121E
transistor ESM 30
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marking H1
Abstract: BAW56T
Text: SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage Reverse Voltage VR 80 V Continuous Forward Current
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BAW56T
marking H1
BAW56T
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Marking H2
Abstract: marking .H2 transistor ESM 30 BAV70T
Text: SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current
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BAV70T
Marking H2
marking .H2
transistor ESM 30
BAV70T
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transistor ESM 30
Abstract: kds221e
Text: SEMICONDUCTOR KDS221E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. B Low Forward Voltage : VF=1.0V Max. . D G H A 2 C 3 1 DIM A B MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +
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KDS221E
transistor ESM 30
kds221e
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ESM diode
Abstract: KDS121E
Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). D H : CT=0.9pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES
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KDS121E
100Temperature
100mA
ESM diode
KDS121E
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esm power diodes
Abstract: KDS120E
Text: SEMICONDUCTOR KDS120E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). D H : CT=2.2pF (Typ.). C 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + DIM A B G 2 A FEATURES
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KDS120E
100mA
esm power diodes
KDS120E
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2fu smd transistor
Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR
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TC55V1001ASTI/ASRI
TC55V2001STI/SRI
TC55V020FT/TR
TC55V2161FTI
TC55V200FT/TR
TC55V040FT/TR
TC55V400FT/TR
TC58VT
TC75S55FU
2fu smd transistor
Infrared sensor TSOP 1738
diode ESM 765
tsop Ir sensor
smd 1608
TSOP44 Package layout
TSOP infrared
infrared sensor (TSOP 1738)data sheet
Compact High-Current and Low VF Surface Mounting Device SBD
TC58V16BFT
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ESM6045DV
Abstract: No abstract text available
Text: SGS-THOMSON llO O M iL iC T IM iK S ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
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6045DV
ESM6045DV
ESM6045DV
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ESM3030DV
Abstract: No abstract text available
Text: r Z 7 S G S -T H O M S O N ^ 7# M D œ m iC T IfM D Ig ESM 3030DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS
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3030DV
ESM3030DV
ESM3030DV
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pnp transistor 1000v
Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A
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BUV48
BUV47
CB-244
CB-285
pnp transistor 1000v
transistor buv 90
bux diode
darlington NPN 1000V transistor
pnp transistor 600V
transistor ESM 30
buv PNP
transistor BU 104
NPN Transistor VCEO 1000V
transistor BUX 48
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TRANSISTOR BDX
Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T
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BUV48
BUV47
O-22CIAB
CB-117
BUV37
CB-244
CB-285
TRANSISTOR BDX
TRANSISTOR BDX 285
pnp transistor 1000v
TRANSISTOR BDX 53
transistor BDX 65
transistor BDX 80
bux diode
darlington NPN 1000V isotop
DARLINGTON ESM 749
transistor BU 184
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diode ESM 15
Abstract: diode ESM 245-1000 diode ESM 244-600 ESM 244-600 diode 606 esm diodes ESM diode Diodes de redressement DIODE REDRESSEMENT esm 200
Text: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types •o Vr r m ■ fsm 10 ms A (V) (A) 60 A / T ç g j g = 90 °C ESM ESM ESM ESM ESM 243- 50, 243-100, 243-200, 243-300, 243-400, (R) (R) (R) (R) (R) j = 165°C 1■ 60 A / Tçase = 90 °C
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CB-34)
CB-256)
CB-319)
diode ESM 15
diode ESM 245-1000
diode ESM 244-600
ESM 244-600
diode 606
esm diodes
ESM diode
Diodes de redressement
DIODE REDRESSEMENT
esm 200
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Untitled
Abstract: No abstract text available
Text: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE
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CB-262
CB-262)
CB-19)
CB-428)
CB-244
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BUF 460 AV
Abstract: IC 2030 schematic diagram 3030DV BUV 460 C esm 200 buf 450 diode diode ESM 15 diagram DARLINGTON buv 40 a 6045AV
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ra0 S ®(IlLll(E?(si®R!IOlgg POWER MODULES BIPOLAR IN ISOTOP ISOTOP; Standard version ISOTOP : Faston version Darlingtons Bipolar transistors Bipolar transistors Darlingtons Internal schematic diagrams J J BO- O C
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ESM thyristor
Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Text: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000
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CB-486
DFB51
ESM thyristor
thyristor disc Vrrm 20000
MDF656
esm 2000
thyristor disc Vrrm 2000
mu 86
452 thyristor
sgs Thomson Thyristor
DF 652
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diode ESM 134
Abstract: No abstract text available
Text: II LbS3131 D 0 n i a 3 1 D EVELO PM EN T DATA ESM6045A V ESM6045D(V) This data sheet coi. ains advance information and specifications are subject to change without notice. N AflER PHILIPS/DISCRETE E5E D T - 2 3 -3 5 “ S IL IC O N D A R LIN G T O N P O W E R T R A N S IS T O R S
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LbS3131
ESM6045A
ESM6045D
6045D
ICsat/50
diode ESM 134
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relay 12 volt
Abstract: diode SM 88A 12 VOLT 2 AMP regulator diode ESM 15 MODEL SA 12 volt 10 amp relay 12 volt relay 100 volt 60 amp to 220
Text: features Four useful power rails in one package Rugged construction Universal mains input Overvoltage Protection on all 5 volt rails “ Off the shelf” availability description The "ESM" Series of System Power Units have been developed to meet the general requirements of hybrid analogue/digital systems
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MIL217B
relay 12 volt
diode SM 88A
12 VOLT 2 AMP regulator
diode ESM 15
MODEL SA
12 volt 10 amp relay
12 volt relay
100 volt 60 amp to 220
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE APX bbS3^31 DDEfibDD b3S b'lE D ESM3045A V ESM3045D(V) J V SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISO T O P package, intended for use in motor drives, converters, switch mode power supplies (SM PS) and uninterruptable power supplies (UPS).
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ESM3045A
ESM3045D
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BUS11A PHILIPS SEMICONDUCTOR
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV
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Q01b22Q
32-0t
OT-93
BUV90
BUV90F
OT-199
ESM3045AV
3045DV
ESM4045AV
BUS11A PHILIPS SEMICONDUCTOR
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Untitled
Abstract: No abstract text available
Text: ~ rs 7 S C S -T H O M S O N ^ 7# s QUAD COMPARATOR INTERFACE CIRCUIT • MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT :0 .3 V ■ OUTPUT CURRENT : 15 mA ■ LARGE SUPPLY VOLTAGE RANGE : + 10 V TO + 35 V . INTERNAL THERM AL PROTECTION ■ INPUT AND OUTPUT CLAMPING PROTEC
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ESM1602B
IP-14/2
ESM1602B
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SOT227B package
Abstract: mb 428 mb 428 ic data ESM4045A ESM4045D SOT227A 4045D
Text: PHILIPS INTERNATIONAL 45E ]> 7110fl2ti 0031233 T M P HIN ESM4045A V ESM4045D(V) T '- 3 3 - d Q SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).
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711082b
ESM4045A
lESM4045D
4045D
ICsat/50
Bon11
Csat/50;
711002b
SOT227B package
mb 428
mb 428 ic data
ESM4045D
SOT227A
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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Diode BAY 71
Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a
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1N456
BAW21A
BAW75
BAW76
BAX84
SFD43
CB-104)
34/CB-104)
CB-127
CB-127.
Diode BAY 71
Diode BAY 45
Diode BAY 46
Diode BAY 88
BAW21
ESM 3070
1n 4009 diode
BAY67
SFD49
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J295
Abstract: BU705 BU705D
Text: I [ PHILIPS INTERNATIONAL MSE D E3 711QñHb OD3üñcí3 3 E3PHIN BU705 BU705D A T '3 3 - P SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching, glass passivated npn pow er transistor in a S O T 9 3 A envelope, intended fo r use in horizontal deflection circuits o f television receivers. The B U 7 0 5 D has an integrated efficiency
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711QfiHt.
BU705
BU705D
T-33-P
OT93A
BU705D
BU705D)
J295
BU705
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