DIODE DG3
Abstract: DG3 diode
Text: CG3 / DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction
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18-Jul-08
DIODE DG3
DG3 diode
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DIODE DG3
Abstract: DG3 diode
Text: CG3/DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode \ Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction
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D-74025
28-Jan-03
DIODE DG3
DG3 diode
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DIODE DG3
Abstract: DG3 diode
Text: CG3 / DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction
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Original
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PDF
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D-74025
11-Aug-04
DIODE DG3
DG3 diode
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DIODE DG3
Abstract: DG3 diode
Text: CG3 / DG3 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction
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08-Apr-05
DIODE DG3
DG3 diode
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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C 33725
Abstract: 7DFL
Text: b2E D • NEC bM2752S DG37blD 7Dfl H N E C E ELECTRONICS INC LASER DIODE M ODULE NDL5605P 1 310nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5605P is a 1 310 nm DFB Distributed Feed-Back laser diode B utterfly package module w ith optical isolator. It in
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bM2752S
DG37blD
NDL5605P
310nm
NDL5605P
b427525
C 33725
7DFL
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BB240
Abstract: glass diode green band
Text: BB240 _ VHF VARIABLE CAPACITANCE DIODE The BB240 is a V H F variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 M Hz in all-band tuners. The diode is encapsulated in the hermetically sealed glass envelope SOD- 8O suitable for surface mounting.
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BB240
BB240
003213S
glass diode green band
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precap
Abstract: No abstract text available
Text: bEE ]> • bM27SSS 0037b53 0T3 «NECE N E C ELECTRONICS INC PHOTO DIODE / _ N D L 5 4 0 5 C 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS <£80 i i m InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405C is an InGaAs PIN photo diode for a light detector of long wavelength transmission systems. It covers the
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NDL5405C
precap
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F7422D
Abstract: No abstract text available
Text: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V
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1412H
F7422D
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GE monitor
Abstract: NEC PM
Text: N E C ELECTRONICS INC bEE D • bM2752S 0 0 3 7 ^ 4 bEl M N E C E PRELIMINARY DATA SHEET N EC LASER DIODE MODULE NDL5723P ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIO NS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5723P is a 1 550 nm laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed fo r a
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bM2752S
NDL5723P
NDL5723P
NDL5717P
NDL5720P*
NDL5723P*
NDL5731P
NDL5735PA--
NDL5736PA--0
14PIN
GE monitor
NEC PM
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thermistor 40k
Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Text: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is
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b4S7S25
NDL5762P
NDL5762P
400mA,
JT-40K
T-40K
thermistor 40k
NEC LASER DIODE PIN DIP
thermo electrical cooler module
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Untitled
Abstract: No abstract text available
Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings
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N60U1
N60AU1
O-247
4hflb22b
20N60U1
20N60AU1
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY S E M I C O N D U C T O R S DS4150-5.5 DSF8045SK FAST RECOVERY DIODE KEY PARAMETERS 4500V ^BRM 430A Jf AV 3500A U m 440|iC Or 3.07|is K APPLICATIONS • Snubber Diode For G TO Applications. FEATURES ■ Double side cooling. ■ High surge capability.
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DS4150-5
DSF8045SK
DSF8045SK45
DSF8045SK44
DSF8045SK43
DSF8045SK42
DSF8045SK41
DSF8045SK40
37bflS22
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S-40T
Abstract: SGS40TA045 SGS40
Text: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING
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SC04520
O-240)
PC-029«
S-40T
SGS40TA045
SGS40
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3SB diode
Abstract: No abstract text available
Text: NEC ELECTRONICS INC LEE D • b42?SS5 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aAsP D C -P B H P U L SE D L A SE R D IO D E M O D U L E DESCRIPTIO N N D L 5 7 6 2 P is a 1 3 1 0 nm pulsed laser diode D IP module with singlemode fiber and internal thermo-electric cooler. It is
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NDL5762P
T-40K
JT-40K
3SB diode
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NDL5300
Abstract: NDL5302 NDL5302L1 NDL5310 NDL5312 NDL5314 Double Heterostructure led
Text: N E C ELECTRONICS INC b5E D • b4S7S2S DOSAIS^ «ÏT4 « N E C E DATA SHEET NEC LIGHT EMITTING DIODE NDL5312 ELECTRON DEVICE 1 30 0 nm O P T IC A L FIBER C O M M U N IC A T IO N S InGaAsP D O U B LE H ETERO STRUCTU RE LED DESCRIPTION N D L 5 3 1 2 is a 1 3 0 0 nm InGaAsP double heterostructure LED. It can achieve high speed response and effective optical
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NDL5312
NDL5312
NDL5300
NDL5302
NDL5310
NDL5314
NDL5320
NDL6320
SI-10/125
NDL5302L1
Double Heterostructure led
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Untitled
Abstract: No abstract text available
Text: TONE RINGER WITH BRIDGE DIODE KA2418B/28 INTRODUCTION T h e K A 2 4 1 8 B /2 8 is a m o n o lith ic in te g ra te d c irc u it te le p h o n e to n e rin g e r w ith b rid g e d io d e , w h e n c o u p le d w ith an a p p ro p ria te tra n s d u c e r, it re p la c e s th e e le c tro m e c h a n ic a l bell. T h is d e v ic e is
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KA2418B/28
2418B
2428B
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1N60N
Abstract: 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6081 50-3-A-12
Text: MME V SPECS □ QGG1SS DG33131 T • M I L S INCH-POUNDI The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 October 1993_ J HIL-S-19500/503A 12 April 1993 SUPERSEDING MIL-S-19500/503 EL 12 May 1975
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DG33131
MIL-S-19500/503A
MIL-S-19500/503CEL)
1N6073
1N6081,
1N60N
1N6074
1N6075
1N6076
1N6077
1N6078
1N6081
50-3-A-12
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STF6045DV
Abstract: BD405 transistor b 1185 BD 149 transistor
Text: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL
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DG30SDb
STF6045DF
STF6045DV
O-240)
PC-029«
STF6045DV
BD405
transistor b 1185
BD 149 transistor
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DYNEx
Abstract: DG306AE
Text: Part and Ordering Number = vDBM/ioo v DR„ v RRM @ T„ ^DRM @ T VJ ^T AV *TCM @ C s @ T V] ^T(RMS) ^TSM @ T yj @ T VJ ^TM (V) (V) (mA) (A) (A) (^F) (A) (kA) DGT304SE* 1300 16 25 250 700 2 390 4 2.2 DG306AE* 2500 16 50 225 600 1 350 3.5 DG406BP* 2500
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DGT304SE*
DG306AE*
DG406BP*
DG646BH*
DG856BW*
DG408BP*
DGT304SE
DG306AE
DG406BP
DG646BH
DYNEx
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BUK481-60A
Abstract: F6 sot223
Text: b^E J> N AUER PHILIPS/DISCRETE • bbS3T31 DG3G71S bl7 BiAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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003G715
BUK481-60A
OT223
D3D72D
OT223.
BUK481-60A
F6 sot223
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Untitled
Abstract: No abstract text available
Text: SbE D • 7^2^237 DG3'î7fl2 W ■ SGTH SGS-THOMSON ilLIOTMgi M54HC30 M74HC30 S G S-THOMSON T - f 3 ~ 2/ 8-INPUT NAND GATE ■ HIGH SPEED tpo = 13 ns TYP. at Vcc = 5V ■ LOW POWER DISSIPATION lCc = 1 /¿A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCC (MIN.)
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M54HC30
M74HC30
M54HC30
M74HC30
M54/74HC30
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M74HC00
Abstract: No abstract text available
Text: Sb E G Z T> m 7^2^237 DG3T73D S'ìD • S G T H S C S -T H O M SO N HD»I[L[l RiO gi s G S-THÖHS0N M54HCÖÖ M74HC00 T -*i3 -Z ( QUAD 2-INPUT NAND GATE ■ HIGH SPEED tpD = 8 ns (TYP. at Vcc = 5V ■ LOW POWER DISSIPATION Ice = 1 i*A (MAX.) at Ta = 25°C
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DG3T73D
M54HCÃ
M74HC00
54/74LS00
M74HC00
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DG308
Abstract: DG308ADY DG309CJ DG308A DG308AAK DG308ABK DG308ACJ DG309 DG309DY
Text: C A L O G I C CÔRP 4flE D • 1844352 0000^44 1 « C G C Quad Monolithic SPST CMOS Analog Switches -T -S t-H DG308A/DG309 Preliminary Product Announcement FEATURES: DESCRIPTION: • • • • • Calogic's DG308A and DG309 are quad single-pole single-throw analog switches designed for high speed
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DG308A/DG309
130ns)
DG308A
DG309
DG308
DG308ADY
DG309CJ
DG308AAK
DG308ABK
DG308ACJ
DG309DY
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