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    DIODE D405 Search Results

    DIODE D405 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D405 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: D405-120 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 120mW laser diode● 405nm laser diode 120mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)


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    PDF D405-120 405nm 120mW 120mW

    diode D405

    Abstract: No abstract text available
    Text: D405-20 Features • Device: • Power: • Package Type: • PIN configuration ● 405nm 20mW laser diode● 405nm laser diode 20mW 5.6mm TO Style B ▪ Absolute Maximum Rating Tc=25°C Characteristics Symbols Optical power Reverse Voltage (Laser) Reverse Voltage (PIN)


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    PDF D405-20 405nm diode D405

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    zener diode 1NU 9F

    Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
    Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:


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    PDF BCE0001A BCE0001B zener diode 1NU 9F diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5

    U1FWJ44P

    Abstract: I-FLAT PACKAGE
    Text: Schottky Barrier Diodes NEW PRODUCT GUIDE The U3FWK42 is a commercial Schottky barrier diode SBD based on sub-micron trench technology. The U3FWK42 seeks to improve on the existing trade-off between forward voltage (VF) and instantaneous reverse current (IR) in Schottky barrier diodes.


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    PDF U3FWK42 U3FWK42 U1FWJ44P I-FLAT PACKAGE

    zener smd marking GA

    Abstract: S6 SMD zener diode Zener diode smd marking 07 5DL2CZ smd schottky diode s6 CMS11 CMS19 CMG03 marking h01 rf semiconductors
    Text: 2008-8 PRODUCT GUIDE Small and Medium Diodes s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1. Diode Product Tree 3 2. Key Features 4 3. New Small & Medium Diodes 5 4. Selection Guide 6 5. Symbols, Terms and Definitions


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    PDF BCE0001F E-28831 BCE0001G zener smd marking GA S6 SMD zener diode Zener diode smd marking 07 5DL2CZ smd schottky diode s6 CMS11 CMS19 CMG03 marking h01 rf semiconductors

    R1448NS

    Abstract: Westcode Semiconductors R1448NS20 r1448 THYRISTOR tv 930 R1448NS14 Westcode N thyristor Westcode N thyristor Semiconductors
    Text: Date:- 18 Aug, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1448NS14# to R1448NS20# Old Type Number: D405CH02-18 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note 1) 1400-2000 V VDSM


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    PDF R1448NS14# R1448NS20# D405CH02-18) R1448NS Westcode Semiconductors R1448NS20 r1448 THYRISTOR tv 930 R1448NS14 Westcode N thyristor Westcode N thyristor Semiconductors

    c5411

    Abstract: c5411 transistor S2000N equivalent 2SC5570 equivalent S2055N equivalent 2SD1555 equivalent c5411 equivalent S2055AF equivalent 2SD2539 equivalent 2SD2499 equivalent
    Text: Horizontal-Deflection Output Transistors PRODUCT GUIDE Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density


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    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


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    2SC4288A

    Abstract: c5411 c5411 transistor 2Sc5858 equivalent MA 8910 2SD2499 equivalent 2SC5446 equivalent 2sc5858 2SD2539 equivalent TV horizontal Deflection Systems
    Text: 2003-9 PRODUCT GUIDE BCE0015A Horizontal-Deflection Output Transistors 2003 http://www.semicon.toshiba.co.jp/eng 1 Outline Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors HV-Trs . Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density


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    PDF BCE0015A 3531C-0103 F-93561, 2SC4288A c5411 c5411 transistor 2Sc5858 equivalent MA 8910 2SD2499 equivalent 2SC5446 equivalent 2sc5858 2SD2539 equivalent TV horizontal Deflection Systems

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


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    PDF KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112

    Untitled

    Abstract: No abstract text available
    Text: IRMD2231Q International Rectifier • 233 Kansas Street, El Segundo, CA 90245 IRMD22381Q Demo Board For 3-phase / 380V motor drives IR22381Q Demo Board without IGBT Power Module www.irf.com USA IRMD22381Q IRMD22381Q Demo Board For 3-phase / 380V motor drives


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    PDF IRMD2231Q IRMD22381Q IR22381Q IRMD22381Q

    IGBT DRIVER SCHEMATIC 3 PHASE

    Abstract: IGBT desaturation Motor Driver Circuit schematic 10 ampere igbt based active filter circuit diagram IR22381Q 3phase GROUND Fault detection CIRCUIT Motor Driver Circuit schematic 20 ampere igbt desaturation driver schematic 3 phase rectifier circuit diagram igbt high power igbt AC 3 phase controller
    Text: IRMD2231Q International Rectifier • 233 Kansas Street, El Segundo, CA 90245 IRMD22381Q Demo Board For 3-phase / 380V motor drives IR22381Q Demo Board without IGBT Power Module www.irf.com z USA IRMD22381Q IRMD22381Q Demo Board For 3-phase / 380V motor drives


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    PDF IRMD2231Q IRMD22381Q IR22381Q IRMD22381Q IGBT DRIVER SCHEMATIC 3 PHASE IGBT desaturation Motor Driver Circuit schematic 10 ampere igbt based active filter circuit diagram 3phase GROUND Fault detection CIRCUIT Motor Driver Circuit schematic 20 ampere igbt desaturation driver schematic 3 phase rectifier circuit diagram igbt high power igbt AC 3 phase controller

    MP6101

    Abstract: Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002
    Text: Power Modules PRODUCT GUIDE CONTENTS 1. 2. 3. 4. 5. 6. Product List Introduction to the Products and Their Features Structure and Dimensions Power Module Packages System Diagram of Power Module Products Power Module Product Matrix 7. Product Line-ups Listed by Package


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    PDF MP4005~ MP4101~ MP4301~ MP6301 MP4501~ MP6901 S-10M MP4208~ S-12M MP4410~ MP6101 Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002

    varo r634

    Abstract: SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer V VF IR IF Max RRM •FSM Max A 00 (A) 00 @ Test 25 °C @ (A) (A) IR VR Test M T2 @ Test (A) c r> Toper Package Style Max (°C) G n ral-Purp se, lo >= 25 A (Cont'd) . . . . 5 -10 .


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    PDF FB3504 RA354 35SP04 DD716 ST4-40 NCR35-400 1N4526 1N1188 D4055W TRA1130 varo r634 SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230

    130001 power transistor

    Abstract: fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400
    Text: Pi Factors Report Page 1 of 63 SortBy: PartType/PN/RefDes Date: 4/5/2007 2:00 PM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Lambda Americas DOC: LZSA1000.CIR RECORDS: 321 DESCRIPTION: LZSA1000 ENV: GB TEMP: 40.00 C CF: 1.00000 MODEL: Serial


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    PDF LZSA1000 LZSA1000 SFBT000054 -------------------------------SHKA171285 -------------------------------SHKA171286 130001 power transistor fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400

    FBT-00

    Abstract: D400 npn transistor FBL-00 D400 npn Q413 1L400 D425 fbnl TRANSISTOR J406 D413
    Text: Pi Factors Report Page 1 of 62 SortBy: PartType/PN/RefDes Date: 1/9/2006 11:20 AM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Your Company Name Here DOC: LZSA500_P1.CIR RECORDS: 316 DESCRIPTION: LZSA500 ENV: GB TEMP: 40.00 C CF: 1.00000


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    PDF LZSA500 LZSA500 SFBT000054 -------------------------------SHKA171285 -------------------------------SHKA171286 FBT-00 D400 npn transistor FBL-00 D400 npn Q413 1L400 D425 fbnl TRANSISTOR J406 D413

    toshiba smd marking

    Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
    Text: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency


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    TIL306 Application Notes

    Abstract: TIL306 so2 sensor Opto-Sensor simple Photodiode SN74123 application note block diagram of so2 sensor NE 565 texas instruments so2 sensor datasheet TSL230 sensor
    Text: TSL213 64 x 1 INTEGRATED OPTO SENSOR SOES009A D4059, NOVEMBER 1992 – REVISED AUGUST 1993 • • Contains 64-Bit Static Shift Register TOP VIEW Contains Analog Buffer With Sample and Hold for Analog Output Over Full Clock Period • • • • SI


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    PDF TSL213 SOES009A D4059, 64-Bit 500-kHz TSL213 TIL306 Application Notes TIL306 so2 sensor Opto-Sensor simple Photodiode SN74123 application note block diagram of so2 sensor NE 565 texas instruments so2 sensor datasheet TSL230 sensor

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


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    PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


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    PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    thyristor handbook

    Abstract: S6A13 TOSHIBA Thyristor S6992 thyristor toshiba toshiba THYRISTOR diode
    Text: New Product Guide High-di /dt and High-Pulse Current Thyristor Series PRODUCT GUIDE High-di/dt, High-Pulse Current and High-Voltage Thyristor Series Overview Package Dimensions Toshiba have developed a high-voltage thyristor capable of controlling high-di/dt and


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    PDF O-220FL S6A13, S6A29* thyristor handbook S6A13 TOSHIBA Thyristor S6992 thyristor toshiba toshiba THYRISTOR diode

    HPND4050

    Abstract: IC STU 404 D HPND-4050
    Text: E 3 Pa c k a r d APPLICATION NOTE 971 The HPND-4050 Beam Lead Mesa PIN in Shunt Applications INTRODUCTION The beam lead PIN diode, w h ile sa tisfyin g requirem ents fo r low ca pa citan ce and planar c irc u it attachm ent, is g e n e ra lly fa b rica te d as a planar PIN diode in o rd e r to


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    PDF HPND-4050 D-4050 HPND4050 IC STU 404 D

    fabrimex

    Abstract: unitronics avnet 8945 TOSHIBA
    Text: European Sales Offices Toshiba European Headquarter Toshiba Electronics Europe GmbH Hansaallee 181 D-40549 Düsseldorf Tel.: +49-211-5 29 60 Fax: +49-211-5 29 64 00 Toshiba Sales Office Toshiba Electronics Europe GmbH München Office Tel.: +49-89-7 48 59 50


    OCR Scan
    PDF D-40549 fabrimex unitronics avnet 8945 TOSHIBA