6098-0126
Abstract: 6098-0 diode c02 D0D82345-32010D D0D82345-20060C MT Series 6098-0061 6098-0022 6098-0017 6098-0129
Text: MT SERIES 090/WITH BUILT-IN DIODE Small connector incorporating large capacity diode of high reliability and excellent heat radiation for the applications C-10 requiring rectifying function. Structure Diode Connector M Connector F Housing F Connector M with built-in chip diode
|
Original
|
PDF
|
090/WITH
D0D82345-32010D
6098-0126
6098-0
diode c02
D0D82345-20060C
MT Series
6098-0061
6098-0022
6098-0017
6098-0129
|
Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD200GB UL;E76102 M Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
|
Original
|
PDF
|
DD200GB
E76102
DD200GB
DD200GB40
|
HALF WAVE RECTIFIER CIRCUITS
Abstract: two transistor forward DD200GB40 DD200GB80
Text: DIODE MODULE DD200GB UL;E76102 M Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
|
Original
|
PDF
|
DD200GB
E76102
DD200GB
DD200GB40
DD200GB80
HALF WAVE RECTIFIER CIRCUITS
two transistor forward
DD200GB40
DD200GB80
|
zener diode
Abstract: WT-Z108N
Text: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z108N
137um)
zener diode
WT-Z108N
|
Untitled
Abstract: No abstract text available
Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,
|
Original
|
PDF
|
OT-23
OT323
OT-23
OT-323
OT-323
OT-143
OT-143
OT-363
OT-363
|
DD200GB40
Abstract: DD200GB80
Text: DIODE MODULE DD200GB UL;E76102 (M) Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
|
Original
|
PDF
|
DD200GB
E76102
DD200GB
42max
34max
05C/W
DD200GB40
DD200GB80
|
LL HP
Abstract: chip die hp SOT 23 Package equivalent
Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,
|
Original
|
PDF
|
OT-23
OT323
OT-143
OT-363
OT-363
5966-0399E
LL HP
chip die hp
SOT 23 Package equivalent
|
Untitled
Abstract: No abstract text available
Text: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z108P
|
DD200GB40
Abstract: DD200GB80 sanrex
Text: DIODE MODULE DD200GB UL;E76102 (M) Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating
|
Original
|
PDF
|
DD200GB
E76102
DD200GB
42max
34max
05C/W
DD200GB40
DD200GB80
sanrex
|
ZENER Vr 3V
Abstract: Zener Diode 3v zener- diode WT-Z111N
Text: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z111N
160um)
ZENER Vr 3V
Zener Diode 3v
zener- diode
WT-Z111N
|
Untitled
Abstract: No abstract text available
Text: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z108N-4
137um)
|
3.2 v zener diode
Abstract: No abstract text available
Text: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z108P-AU
3.2 v zener diode
|
um 54 diode
Abstract: zener diode chip 3.2 v zener diode
Text: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z108N-AU
137um)
um 54 diode
zener diode chip
3.2 v zener diode
|
WT-Z108P
Abstract: No abstract text available
Text: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z108P-4
WT-Z108P
|
|
z106
Abstract: DIODE ZENER X
Text: WT-Z106P-4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-14 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z106P-4-14
150mm)
25-Jan-07
z106
DIODE ZENER X
|
3.2 v zener diode
Abstract: 105um DIODE ZENER X
Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode
|
Original
|
PDF
|
WT-Z106P-4-12
150mm)
05-Dec-06
3.2 v zener diode
105um
DIODE ZENER X
|
std883
Abstract: Zener diode DIODE ZENER X
Text: WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode
|
Original
|
PDF
|
WT-Z106N-AU4
MIL-STD883
24-Nov-05
std883
Zener diode
DIODE ZENER X
|
3.2 v zener diode
Abstract: diode zener protection ZENER 5V diode Zener LED zener diode WT-Z105P-AU4 DIODE ZENER X
Text: WT-Z105P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 2. Structure: 2-1 Planar type: P/N Diode
|
Original
|
PDF
|
WT-Z105P-AU4
MIL-STD883
3.2 v zener diode
diode zener protection
ZENER 5V diode
Zener LED
zener diode
WT-Z105P-AU4
DIODE ZENER X
|
DBES105A
Abstract: SAS diode
Text: DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for
|
Original
|
PDF
|
DBES105a
DBES105a
DSDBES1051067
-08-Mar-01
SAS diode
|
DIODE CHIP
Abstract: No abstract text available
Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters, or by a three element
|
Original
|
PDF
|
OT-23
OT-323
OT-143
OD-323
5966-0399E
AV02-0038EN
DIODE CHIP
|
CD4148WP
Abstract: DIODE 1206 "switching Diode" CD4148
Text: CHIP SWITCHING DIODE 2000-AUG-15 Document No. CDWTP050633 www.mayloon.com.hk CD4148WP 1206 CHIP SWITCHING DIODE 2000-AUG-15 Document No. CDWTP050633 www.mayloon.com.hk CD4148WP (1206) CHIP SWITCHING DIODE 2000-AUG-15 Document No. CDWTP050633 www.mayloon.com.hk
|
Original
|
PDF
|
2000-AUG-15
CDWTP050633
CD4148WP
CD4148WP
DIODE 1206
"switching Diode"
CD4148
|
S09ZD
Abstract: Tyntek
Text: Si Zener-diode Chip-TKS09ZD-L Preliminary 1. Scope •The specification applies to planar Zener diode. •Extra lower leakage current •Special thickness for special assembly process. 2. Structure •Planar type Zener diode. •Electrode P anode :Aluminum.
|
Original
|
PDF
|
ChipTKS09ZD-L
100uA
S09ZD
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
S09ZD
Tyntek
|
Untitled
Abstract: No abstract text available
Text: Si Zener-diode Chip-TKS09ZD-L Preliminary 1. Scope •The specification applies to planar Zener diode. •Extra lower leakage current •Special thickness for special assembly process. 2. Structure •Planar type Zener diode. •Electrode P anode :Aluminum.
|
Original
|
PDF
|
ChipTKS09ZD-L
100uA
S09ZD
Tel886-3-5781616
Fax886-3-5780545
Tel886-37-582997
Fax886-37-582908
|
LED pigtailed
Abstract: Diode PH 13M
Text: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier
|
OCR Scan
|
PDF
|
STM-4/OC-12,
LED pigtailed
Diode PH 13M
|