Untitled
Abstract: No abstract text available
Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91451B
IRG4BC30FD
O-220AB
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IRG4BC30FD
Abstract: diode bridge LT 405
Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91451B
IRG4BC30FD
O-220AB
IRG4BC30FD
diode bridge LT 405
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IRG4BC30FD
Abstract: fl 014
Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91451B
IRG4BC30FD
O-220AB
IRG4BC30FD
fl 014
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Untitled
Abstract: No abstract text available
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
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AN-994
Abstract: IRG4BC20SD-S
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
AN-994
IRG4BC20SD-S
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AN-994
Abstract: IRG4BC20SD-S irg4bc
Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4BC20SD-S
AN-994
IRG4BC20SD-S
irg4bc
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LT W04G
Abstract: diode bridge LT 405 W005G-W10G W02G W04G W06G W08G W10G W005G W01G
Text: W005G–W10G Vishay Lite–On Power Semiconductor 1.5A Glass Passivated Bridge Rectifier Features D Glass passivated die construction D Diffused junction D Low forward voltage drop, high current capability D D D D Surge overload rating to 50A peak Ideal for printed circuit boards
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W005G
E95060
W005G
D-74025
24-Jun-98
LT W04G
diode bridge LT 405
W005G-W10G
W02G
W04G
W06G
W08G
W10G
W01G
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2w005g2
Abstract: 2W005G 2W01G 2W02G 2W04G 2W06G 2W08G 2W10G 2w005g-2w10g
Text: 2W005G–2W10G Vishay Lite–On Power Semiconductor 2.0A Glass Passivated Bridge Rectifier Features D Glass passivated die construction D Diffused junction D Low forward voltage drop, high current capability D D D D Surge overload rating to 60A peak Ideal for printed circuit boards
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2W005G
2W10G
E95060
2W005G
2W01G
2W02G
2W04G
2W06G
2W08G
2w005g2
2W01G
2W02G
2W04G
2W06G
2W08G
2W10G
2w005g-2w10g
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str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
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2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
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TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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CPC945
Abstract: PPC970 PPC970FX PowerPC 970 970MP IBM PPC970FX RISC Microprocessor and CPC945 Bridge Design Guidelines PowerPC 970 user manual PPC-970FX GD31244 IBM schematics t21
Text: Title Page IBM PowerPC 970FX RISC Microprocessor and CPC945 Bridge and Memory Controller Design Guide SA14-970FXDG-03 October 31, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation 2007 All Rights Reserved Printed in the United States of America October 2007
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970FX
CPC945
SA14-970FXDG-03
PPC970
PPC970FX
PowerPC 970
970MP
IBM PPC970FX RISC Microprocessor and CPC945 Bridge Design Guidelines
PowerPC 970 user manual
PPC-970FX
GD31244
IBM schematics t21
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CPC945
Abstract: PPC970MP GD31244 SA14-970MPDG-03 PPC970MP DIMM hypertransport PowerPC970MP thermal diode 970MP PPC970FX PPC-970FX
Text: Title Page IBM PowerPC 970MP RISC Microprocessor and CPC945 Bridge and Memory Controller Design Guide SA14-970MPDG-03 September 13, 2007 Copyright and Disclaimer Copyright International Business Machines Corporation 2006, 2007 All Rights Reserved Printed in the United States of America September 2007
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970MP
CPC945
SA14-970MPDG-03
PPC970MP
GD31244
SA14-970MPDG-03
PPC970MP DIMM
hypertransport
PowerPC970MP thermal diode
PPC970FX
PPC-970FX
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Darlington transistor to 92
Abstract: N50 DIODE
Text: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P DESCRIPTION T h e Integrated Telecom Circuit series com bines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications.
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ITC117P/ITC135P/ITC137P
ITC117P/ITC135P/ITC137P
ITC117P/ITC135P/1TC137P
Darlington transistor to 92
N50 DIODE
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LT 0216 diode
Abstract: 20/LT 0216 diode diode bridge LT 405
Text: DIXYS MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ^TRMS ^TAVM V RRM V RSM V RRM VDSM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS’ ^FRMS T VJ - T VJM Tc = 85°C; 180° sine ^TAVM’ ^FAVM ^TSM’ ^FSM Ji2dt
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255-12io1
255-14io1
255-16io1
255-18io1
4bflb22h
GD03230
LT 0216 diode
20/LT 0216 diode
diode bridge LT 405
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E78996 scr
Abstract: p402w
Text: • International Ek>r]Rectifier 4Ô5S4SE GDlbS3T 'ÎÔT ■ INR INTERNATIONAL RECTIFIER bSE » SERIES P400 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features ■ Glass passivated junctions for greater reliability ■ Electrically isolated base plate ■ Available up to 1200 V RRM, V DRM
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E78996
E78996 scr
p402w
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D International Hil]Rectifier • MÖSSHS2 DDlbMfi? 751 ■ s e r ie s mb SINGLE PHASE BRIDGE & jb Power Modules 1 0 A Features 2 5 A ■ Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package,
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100JB-L
36MB-A
250JB-L
35MB-A
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CLAREX
Abstract: Vactec optocoupler 118MFRTD BLH ELECTRONICS CALIBRATION TF5SX17ZZ VTL5C10 50hz wien oscillator VTL5C1 Wheatstone Bridge amplifier Sage Laboratories Phase Shifters
Text: rrun^Aß J Ê k tm F Application Note 43 TECHNOLOGY June 1990 Bridge Circuits Marrying Gain and Balance Jim Williams Bridge circuits are among the most elemental and powerful electrical tools. They are found in measurement, switching, oscillator and transducer circuits. Additionally, bridge tech
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AN43-47
61/TPuT
AN43-48
CLAREX
Vactec optocoupler
118MFRTD
BLH ELECTRONICS CALIBRATION
TF5SX17ZZ
VTL5C10
50hz wien oscillator
VTL5C1
Wheatstone Bridge amplifier
Sage Laboratories Phase Shifters
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Untitled
Abstract: No abstract text available
Text: MITEL MP03 XX 440 Series Dual Diode Modules SEMICONDUCTOR Supersedes O ctober 1992 version, 1.0 DS5106-2.0 D ecem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint
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DS5106-2
1250A
MP03/440
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MP03
Abstract: No abstract text available
Text: MP03 XX 440 Series MITEL Dual Diode Modules SEMICONDUCTOR Supersedes O ctober 1992 version, 1.0 DS5106-2.0 D ecem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina non-toxic Isolation Medium
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DS5106-2
1250A
MP03/440
MP03
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36MB80A
Abstract: 36MB40A 36MB60A 26MB diode d39 axn 4 S50J 100JB1-L
Text: 55 INTERNATIONAL RECTIFIER ' 4855452 I N T E R NAT TONAL R EC T IF I ER DeTJ 4Ö5SLIS2 000S1Ö7 55C 05167 D Data Sheet No. PD-4.007D INTERNATIONAL RECTIFIER IO R 100JB, S50JB, 26MB, 35MB AND 36MB SERIES 10 to 35 amp rectifier bridges Description/Features Major Ratings and Characteristics
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000S1
100JB,
S50JB,
100JB
250JB
36MB80A
36MB40A
36MB60A
26MB
diode d39
axn 4
S50J
100JB1-L
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transistor IR 840
Abstract: OZ930
Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC20UD
T0220AB
transistor IR 840
OZ930
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IR p123
Abstract: T100K KL23008 P405W p105w T140K IR P124 25016D P102W L170-16
Text: 1 I n t e r n a t io n a l R e c t if ie r Phase Control SCR Part Number 20 Doubler Circuit Doubler Circuit Positive Control Negative Control VRRM Vdrm (V) lT(AV)«Tc •RAVI CQ (A) IT5M,IfSM(2) SOHz 50 Hz (A) (15) RthJCDC (K/W) nom- Fax-onDemand Number
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T100K
T120K
T140K
T160K
IR p123
KL23008
P405W
p105w
IR P124
25016D
P102W
L170-16
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