HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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transistor r1009
Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02
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CTM805SVSERV
107-800455-4G
127-476042-0D
130-600101-0G
190-R63300-02
774-R63301-00
774-R63302-00
774-R63303-00
849-R63301-00
892-R63301-06
transistor r1009
ctv350s
ZD405
OPT601
r63302
ic902
TH901
q702 transistor
w17 transistor
philips carbon film resistor
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2SK2225
Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Text: CONTENTS • Index. 4 ■ General Information.
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PM50150K
31Max
2SK2225
2sj150
2sk1058
2SK215 equivalent
2sk135 application note
2SK975 equivalent
2SK2416
2sk135 audio application
2SK135 audio amplifier
2SK2225 equivalent
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2SJ172
Abstract: 2SK970 4AM16
Text: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching
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4AM16
2SJ172
2SK970
4AM16
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2SJ172
Abstract: 2SK970 4AM16
Text: 4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP–12 High speed power switching Features 1 • Low on–resistance N Channel : RDS on ≤ 0.17Ω, VGS = 10V , ID = 4A P Channel : RDS(on) ≤ 0.2Ω, VGS = -10V , ID = -4A • High speed switching
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4AM16
2SJ172
2SK970
4AM16
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smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain
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des691
10F-A,
smps 1000W
600V 300A igbt dc to dc boost converter
SP6-P
DRF1400
smps 500w half bridge
DRF1300
1000w inverter MOSFET
1000W solar power inverter
APT30GT60BRG
3000w inverter mosfet circuit
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Untitled
Abstract: No abstract text available
Text: 60V, 1A/2A Peak, 1/2 Bridge Driver with 4V UVLO HIP2103, HIP2104 Features The HIP2103 and HIP2104 are half bridge drivers designed for applications using DC motors, three-phase brushless DC motors, or other similar loads. • 60V maximum bootstrap supply voltage
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HIP2103,
HIP2104
HIP2103
HIP2104
HIP2104)
Inte58)
5m-1994.
FN8276
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Untitled
Abstract: No abstract text available
Text: 60V, 1A/2A Peak, Half Bridge Driver with 4V UVLO HIP2103, HIP2104 Features The HIP2103 and HIP2104 are half bridge drivers designed for applications using DC motors, three-phase brushless DC motors, or other similar loads. • 60V maximum bootstrap supply voltage
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HIP2103,
HIP2104
HIP2103
HIP2104
HIP2104)
5m-1994.
FN8276
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com AN-9077 Motion SPM 7 Series User’s Guide Table of Contents 1 2 3 4 Introduction. 2 Application Example . 14 1.1. Design Concept .2
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AN-9077
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Untitled
Abstract: No abstract text available
Text: Détecteurs opto-électroniques. Fibres optiques et amplificateurs pour fibres optiques. Précis, quelle que soit votre application. Edition 2014 Les détecteurs opto-électroniques Baumer allient des technologies éprouvées et des innovations ambitieuses.
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CH-8501
0x/12
11xxxxxx
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circuit diagram bridge transducer 4-20ma
Abstract: 4-20mA transmitter for a bridge type transducer SCADA complete notes design of a 4-20mA transmitter for a bridge type LT1049 weight transducer 4-20ma 2N6121 XTR104 XTR104AP XTR104AU
Text: XTR104 4-20mA Current Transmitter with BRIDGE EXCITATION AND LINEARIZATION FEATURES APPLICATIONS ● LESS THAN ±1% TOTAL ADJUSTED ERROR, –40°C TO +85°C ● INDUSTRIAL PROCESS CONTROL ● FACTORY AUTOMATION ● BRIDGE EXCITATION AND LINEARIZATION ● WIDE SUPPLY RANGE: 9V to 40V
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XTR104
4-20mA
50ppm/
110dB
XTR104
4-20mA,
1N4148
RCV420
circuit diagram bridge transducer 4-20ma
4-20mA transmitter for a bridge type transducer
SCADA complete notes
design of a 4-20mA transmitter for a bridge type
LT1049
weight transducer 4-20ma
2N6121
XTR104AP
XTR104AU
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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EH75
Abstract: EH60 EH6002B EH6004B EH6006B EH6008B EH6010B EH7502B EH7504B EH7506B
Text: Single Phase Bride e Modules EH60, EH75 Dim. Inches Minimum c ± I- l-L -l —H Microsemi Catalog Number EH6002B* EH7502B* EH6004B* EH7504B* EH6006B* EH7506B* EH6008B* EH7508B* EH6010B* EH7510B* EH6012B* EH7512B* Millimeter Maximum Minimum Maximum Notes A
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EH6002B*
EH7502B*
EH6004B*
EH7504B*
EH6006B*
EH7506B*
EH6008B*
EH7508B*
EH6010B*
EH7510B*
EH75
EH60
EH6002B
EH6004B
EH6006B
EH6008B
EH6010B
EH7502B
EH7504B
EH7506B
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Untitled
Abstract: No abstract text available
Text: DB 25-005.-16 Dreiphasen-Si-Brfickengleichrichter 3-Phase Si-Bridee Rectifiers Nominal current Nennstrom 25 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1600 V Plastic case with Al-bottom Kunststoffgehäuse mit Alu-Boden 28.5 x 28.5 x 10 [mm]
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UL94V-0
R0D1RS14
000017S
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BRIDGE RECTIFIERS kbpc 2512
Abstract: No abstract text available
Text: KBPC 2500.2516 Silizium-Bruckengleichrichter Silicon-Bridee Rectifiers 25 A Nominal current - Nennstrom 3 5 .,1000 V Alternating input voltage - Eingangswechselspannung Type “W r Type “F” 28.6 X 28.6 X 7.1 [mm] Metal case Metallgehäuse Casting compound has UL classification 94V-0
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UL94V-0
R0D1RS14
Q0Q0174
000017S
BRIDGE RECTIFIERS kbpc 2512
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Untitled
Abstract: No abstract text available
Text: B40FS.B380FS Schnelle Si-Briickengleichrichter für die Oberflächenmontage Fast Switching Surface Mount Si-Bridee Rectifiers 1A Nominal current Nennstrom Alternating input voltage Eingangswechseispannung J_ L n= B — Q- Plastic case Kunststoffgehäuse
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B40FS.
B380FS
UL94V-0
B40FS
B80FS
B125FS
B250FS
R0D1RS14
DGG174
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VERPACKUNGSVORSCHRIFT
Abstract: No abstract text available
Text: B.C 2300-1500 Silizium-Brückengleichrichter Silicon-Bridee Rectifiers — 2.3 A / 1.5 A Nominal current Nennstrom 19 - • 2 x 4 5 * -j 40.500 V Alternating input voltage Eingangswechselspannung 'yp A ir ¡id. a ■ 1 9 x 5 x 1 0 [mm] Pastic case
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UL94V-0
B125C
B250C
B380C
B500C
R0D1RS14
000017S
VERPACKUNGSVORSCHRIFT
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diode bridge KBU 8K
Abstract: diode bridge KBU 8d
Text: K B U 8 A .M Siliziiim -Briickengleichrichter Silicon-Bridee Rectifiers Nominal current N ennstrom \ — 4.5 45° 8.0 A Alternating input voltage Eingangswechselspannung 3 5 .7 0 0 V 23.5 x 7 x 19.3 [mm] Pastic case Kunststoffgehause J W eight approx.
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G0174
000017S
diode bridge KBU 8K
diode bridge KBU 8d
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diodo 2B
Abstract: No abstract text available
Text: 7 » > y v s rf*-K Bride» Diodo S Q . I . P . 5 2 Square In-line Package • JHß-tfäsBI O U T L IN E D IM E N S IO N S S5VBD 6 0 0 V 6 A a - z n e ^ c f f li jt3.2-°oi — ì H 1 > Î1 i m r I)-5 U nit 1 mm ■ ^ *£ 3 5 R A TIN G S Absolute Maximum Ratings
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S5VB20
50HzE3Â
diodo 2B
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MG75N2YS1
Abstract: No abstract text available
Text: GTR MODULL SILICON N CHANNEL IGBT MG75N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf= l .Ofis Max. trr= 0 .5fis (Max. ) . Low Saturation Voltage: VcE(sat)=5.OV(Max.) . Enahncement-Mode . Includes a Complete Half Bride in One
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MG75N2YS1
MG75N2YS1
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mg75n2ys
Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
Text: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.
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MG75N2YS1
mg75n2ys
LTA 703 S
MG75N2YS1
MG75N2
MG75N2Y
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4J52
Abstract: magnetrons Philips magnetrons sharp magnetron facon diode haute tension P 939 DIODE M501 sharp modulateur magnetron CONDENSATEUR PHILIPS
Text: P H IL IP S PÏÏ52 Forced-air cooled packaged MAGNETRON for use as pulsed oscillator, operating at a fixed frequency within the range 9345-94-05 Mc/s, capable of delivering a peak output power of atout 80 kW ' MAGNETRON refroidi par air forcé, avec aimant incorporé,
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7R51326
7R51270
4J52
magnetrons Philips
magnetrons
sharp magnetron
facon diode haute tension
P 939 DIODE
M501
sharp modulateur
magnetron
CONDENSATEUR PHILIPS
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Untitled
Abstract: No abstract text available
Text: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC
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0D021A4
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B2HKF
Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °
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