BAY80
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAY80 General purpose diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification General purpose diode BAY80 FEATURES
|
Original
|
PDF
|
M3D176
BAY80
DO-35)
BAY80
MAM246
|
Untitled
Abstract: No abstract text available
Text: BAY80 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS
|
Original
|
PDF
|
BAY80
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
50K/box
BAY80
BAY80-TR
BAY80-TAP
|
BAY80
Abstract: MAM246 Diode BAY80
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAY80 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification General purpose diode BAY80 FEATURES DESCRIPTION • Hermetically sealed leaded glass
|
Original
|
PDF
|
M3D176
BAY80
DO-35)
BAY80
MAM246
MAM246
Diode BAY80
|
Untitled
Abstract: No abstract text available
Text: BAY80 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, High Voltage FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
|
Original
|
PDF
|
BAY80
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
BAY80-TR
BAY80-TAP
|
BAY80
Abstract: No abstract text available
Text: BAY80 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80–TAP BAY80–TR Remarks Ammopack Tape and Reel Absolute Maximum Ratings
|
Original
|
PDF
|
BAY80
BAY80â
D-74025
14-Feb-01
BAY80
|
BAY80
Abstract: No abstract text available
Text: BAY80 Vishay Telefunken Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80–TAP BAY80–TR Remarks Ammopack Tape and Reel Absolute Maximum Ratings
|
Original
|
PDF
|
BAY80
BAY80
D-74025
14-Feb-01
|
BAY80
Abstract: No abstract text available
Text: BAY80 Vishay Semiconductors Switching Diode Features D Silicon Epitaxial Planar Diode Applications 94 9367 General purpose Order Instruction Type Type Differentiation BAY80 VRRM = 150 V Ordering Code BAY80–TAP BAY80–TR Remarks Ammopack Tape and Reel Absolute Maximum Ratings
|
Original
|
PDF
|
BAY80
BAY80
D-74025
14-Feb-01
|
BAY80
Abstract: No abstract text available
Text: BAY80 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diode Applications General purpose Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options: TR / 10 k per 13 " reel 52 mm tape , 50 k/box
|
Original
|
PDF
|
BAY80
DO-35
BAY80
BAY80-TR
BAY80-TAP
D-74025
31-Mar-04
|
BAY80
Abstract: BAY80-TAP BAY80-TR DO35
Text: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purpose 94 9367 Mechanical Data
|
Original
|
PDF
|
BAY80
2002/95/EC
2002/96/EC
TR/10
TAP/10
BAY80-TAP
BAY80-TR
08-Apr-05
BAY80
BAY80-TR
DO35
|
Untitled
Abstract: No abstract text available
Text: BAY80 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diode Applications General purpose Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options: TR / 10 k per 13 " reel 52 mm tape , 50 k/box
|
Original
|
PDF
|
BAY80
DO-35
BAY80
BAY80-TR
BAY80-TAP
08-Apr-05
|
BAY80
Abstract: BAY80-TAP BAY80-TR DO35
Text: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purpose 94 9367 Mechanical Data
|
Original
|
PDF
|
BAY80
2002/95/EC
2002/96/EC
TR/10
TAP/10
BAY80-TR
BAY80-TAP
08-Apr-05
BAY80
BAY80-TAP
DO35
|
BAY80
Abstract: BAY80-TAP BAY80-TR DO35
Text: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purpose 94 9367 Mechanical Data
|
Original
|
PDF
|
BAY80
2002/95/EC
2002/96/EC
TR/10
TAP/10
BAY80-TR
BAY80-TAP
18-Jul-08
BAY80
BAY80-TAP
DO35
|
Untitled
Abstract: No abstract text available
Text: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
|
Original
|
PDF
|
BAY80
AEC-Q101
2002/95/EC
2002/96/EC
DO-35
TR/10
TAP/10
BAY80
BAY80-TR
BAY80-TAP
|
Untitled
Abstract: No abstract text available
Text: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
|
Original
|
PDF
|
BAY80
AEC-Q101
2002/95/EC
2002/96/EC
DO-35
TR/10
TAP/10
BAY80
BAY80-TR
BAY80-TAP
|
|
|
Untitled
Abstract: No abstract text available
Text: BAY80 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21
|
Original
|
PDF
|
BAY80
AEC-Q101
2002/95/EC
2002/96/EC
DO-35
TR/10
TAP/10
BAY80
BAY80-TR
BAY80-TAP
|
BAY80
Abstract: No abstract text available
Text: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
|
Original
|
PDF
|
BAY80
01-Apr-99
D-74025
BAY80
|
BAY80
Abstract: No abstract text available
Text: BAY80 Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
|
Original
|
PDF
|
BAY80
12-Dec-94
D-74025
BAY80
|
BAY80
Abstract: ulm28 103fd 50N13
Text: Philips Semiconductors Product specification General purpose diode BAY80 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAY80 is a switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
|
OCR Scan
|
PDF
|
BAY80
DO-35)
BAY80
711DfiEh
ulm28
103fd
50N13
|
Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
|
OCR Scan
|
PDF
|
1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
|
10 35 DIODE
Abstract: BA217 BAY71 BY 236 BA128 BA129 BA130 BA218 BA316 BA317
Text: NATL SEMICOND DISCRETE 11E D I b S D llB Q UÜ37 Jib! 4 m This Material Copyrighted By Its Respective Manufacturer This Diode Pro Electron Series Material z > Diode Pro Electron Series Continued Part No. Copyrighted BAY19 BAY71 BAY72 BAY73 BAY74 BAY80 BAY82
|
OCR Scan
|
PDF
|
BA128
DO-35
BA129
BA130
BA217
BA218
10 35 DIODE
BAY71
BY 236
BA316
BA317
|
Untitled
Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE APX ^ 5 3*13 1 DD2b3?a 712 BAY80 b'lE » GENERAL PURPOSE DIODE Silicon planar epitaxial diode in DO-35 envelope; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
|
OCR Scan
|
PDF
|
BAY80
DO-35
|
diode 334
Abstract: BAY80
Text: N AUER PHILIPS/DISCRETE □TE D • IAPX tbS3R31 DQ2b37fl 712 BAY80 I GENERAL PURPOSE DIODE S ilicon planar ep itaxial diode in D O -3 5 envelope; intended fo r switching and general purposes in industrial eq u ip m e n t e.g. oscilloscopes, digital voltm eters and video o u tp u t stages in c o lo u r television.
|
OCR Scan
|
PDF
|
tbS3R31
DQ2b37fl
BAY80
DO-35
DO-35
diode 334
BAY80
|
BAY80
Abstract: No abstract text available
Text: BAY80_ Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current
|
OCR Scan
|
PDF
|
BAY80_
01-Apr-99
01-Apr-99
BAY80
|
Untitled
Abstract: No abstract text available
Text: _ BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose y Absolute Maximum Ratings Tj = 25° C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
|
OCR Scan
|
PDF
|
BAY80
-Apr-99
01-Apr-99
|
