DIODE TA 70/04
Abstract: Q62702-A846 TA 70/04 DIODE BAS JS v marking code 76s schottky 73s Q62702-A118 Q62702-A711 Q62702-A730 Q62702-A774
Text: Silicon Schottky Diodes BAS 70 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-A118
OT-23
Q62702-A730
Q62702-A711
Q62702-A774
DIODE TA 70/04
Q62702-A846
TA 70/04
DIODE BAS JS v
marking code 76s
schottky 73s
Q62702-A118
Q62702-A711
Q62702-A730
Q62702-A774
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DIODE 4004
Abstract: diode 4007 Q62702-D980 diode marking 515 44S DIODE Q62702-D339 Q62702-D978 Q62702-D979 MARKING 720 SOT23 4004 diode
Text: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-D339
OT-23
Q62702-D980
Q62702-D979
Q62702-D978
DIODE 4004
diode 4007
Q62702-D980
diode marking 515
44S DIODE
Q62702-D339
Q62702-D978
Q62702-D979
MARKING 720 SOT23
4004 diode
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DIODE 4004
Abstract: Q62702-D980 D1314 d339 transistor marking 47s Q62702-D339 Q62702-D978 Q62702-D979 44S marking code 45s MARKING CODE
Text: Silicon Schottky Diodes BAS 40 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-D339
OT-23
Q62702-D980
Q62702-D979
Q62702-D978
DIODE 4004
Q62702-D980
D1314
d339
transistor marking 47s
Q62702-D339
Q62702-D978
Q62702-D979
44S marking code
45s MARKING CODE
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44S DIODE
Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
Text: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065
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0-04W
0-05W
0-06W
Q62702-A1065
Q62702-A1066
Q62702-A1067
OT-323
44S DIODE
Q62702-A1066
marking 45s
marking C1
MARKING 44s
Q62702-A1065
Q62702-A1067
cu marking code diode
DIODE BAS JS v
Marking on semiconductor 720
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Abstract: No abstract text available
Text: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol
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Q62702-A95
Q62702-A113
Q62702-A79
OT-23
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Untitled
Abstract: No abstract text available
Text: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
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IRF7309PbF-1
IRF7309TRPr
D-020D
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Abstract: No abstract text available
Text: IRF7455PbF-1 SMPS MOSFET HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) V 0.0075 Ω 37 nC 15 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification
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IRF7455PbF-1
D-020D
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Abstract: No abstract text available
Text: IRF7406PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -10V) Q g (max) ID -30 V 0.045 Ω 59 nC -5.8 (@TA = 25°C) A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7406PbF-1
IRF7406TRPbF-1
D-020D
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IRF7331TRPBF-1
Abstract: No abstract text available
Text: IRF7331PbF-1 HEXFET Power MOSFET VDS RDS on max 20 V (@VGS = 4.5V) mΩ RDS(on) max 45 (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 30 13 nC 7.0 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package
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IRF7331PbF-1
IRF73er
D-020D
IRF7331TRPBF-1
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Abstract: No abstract text available
Text: IRF7380PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID 80 V 73 15 S1 1 8 D1 mΩ G1 2 7 D1 nC S2 3 6 D2 G2 4 5 D2 3.6 (@TA = 25°C) A SO-8 Top View Applications l High frequency DC-DC converters Features Industry-standard pinout SO-8 Package
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IRF7380PbF-1
IRF73e
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IRF7907PBF
Abstract: No abstract text available
Text: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications
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IRF7907PbF-1
IRF7907PBF
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Untitled
Abstract: No abstract text available
Text: IRF7410PbF-1 HEXFET Power MOSFET VDS -12 RDS on max V 7 (@VGS = -4.5V) RDS(on) max 9 (@VGS = -2.5V) RDS(on) max mΩ 13 (@VGS = -1.8V) Qg (typical) ID (@TA = 25°C) 91 nC -16 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package
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IRF7410PbF-1
D-020D
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Untitled
Abstract: No abstract text available
Text: IRF7342PbF-1 HEXFET Power MOSFET VDS -55 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V S1 1 8 D1 G1 2 7 D1 3 6 D2 4 5 D2 0.105 Ω 26 nC S2 -3.4 A G2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7342PbF-1
IRF7342TRPbF-1
TD-020D
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Untitled
Abstract: No abstract text available
Text: IRF7404PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -4.5V) Qg ID (@TA = 25°C) -20 V 0.04 Ω 50 nC -6.7 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7404PbF-1
IRF7404TRPbF-1
D-020D
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MARKING 74s
Abstract: PF 7004S
Text: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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70-04S
VPS05604
70-04S
Q62702-A3468
OT-363
MARKING 74s
PF 7004S
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Untitled
Abstract: No abstract text available
Text: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708
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Q62702-A242
Q62702-A707
Q62702-A708
Q62702-A95
Q62702-A113
Q62702-A79
3AS19
fl23b320
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sot23 js marking
Abstract: BAS20 BAS21 DIODE BAS JS v
Text: BASI9/BAS20 BAS21 1 Surface M o u n t S w itching Diode SWITCHING DIODE 200mA MPERS 120-250VO ITS Features: *F ast S w itc h in g S peed •S u rfa c e M o u n t P ackage Id e a lly S u ite d fo r A u to m a tic In s e rtio n *H ig h C o n d u c ta n c e *F or G eneral P u rp o se S w itc h in g A p p lic a tio n s
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BASI9/BAS20
BAS21
OT-23
MIL-STD-202.
008grams
200mA
120-250VOLTS
OT-23
Cha100
sot23 js marking
BAS20
BAS21
DIODE BAS JS v
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Untitled
Abstract: No abstract text available
Text: MCC SMALL SIGNAL SCHOTTKY DIODES OPERATING/STORAGE TEMPERATURE RANGE: -55 *0 TO 125°C Peak Reverse Voltage PRV Marking Code MCC Part Number Maximum Reverse Current VpK V Surge Current 1 Second Pulse Maximum Forward Voltage Drop Capacitance Ir V F @ If V f @ lF
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BAT54
BAT54A
BAT54C
BAT54S
DO-35
BAT45
BAT46
100nA
BAT85
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smd diode marking A7 SOT-23
Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad
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OT-23
OT-143
PMLL4151
PMLL4153
PMLL4446
PMLL4448
OT-223
OT-143
smd diode marking A7 SOT-23
SMD DIODE A6 t SOT-23
5d smd sot-23
L21 SMD
marking codes sot-23 A4
A7 w sot-23
diode SOT89 smd marking A5
sod a4 marking smd diode
SOT23 A6
smd diode marking A3 sot23
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MG30G2YL1
Abstract: No abstract text available
Text: MG30G2YL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hpE=100 Min. (1^=3
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MG30G2YL1
50i------------------------------
77--r
MG30G2YL1
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DIODE Sl
Abstract: No abstract text available
Text: Bridge Diode Low Noise type Single In-line Package • W IN -ä sia OUTLINE DIMENSIONS D6SB60L TO 600V 6A 45 £1 • » s ü s iP A ’ s / ' r - y •U L1S W UL File No,E 1 4 2 4 2 2 m n -n x m *- y*J RATINGS Absolute Maximum Ratings (fêÆ £v'Srê- T c=25°C )
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D6SB60L
50HzIE&
J514-5
DIODE Sl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOS V 2 S J 40 2 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS TO-22QFL 4 V Gate Drive
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2SJ402
O-22QFL
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MG200H1AL1
Abstract: T-52-13-25
Text: TOSHIBA {DISCRETE/OPTOJ 5b 9097250 TOSHIBA DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTO N POWER MODULE)_ D E § TCHTSSG □□00237 5 f bt>C 08237 T-52-13-25 MG200H1AL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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T-52-13-25
MG200H1AL1
MG200H1AL1
T-52-13-25
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Untitled
Abstract: No abstract text available
Text: TO SHIBA YTAF830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV Y T A F R 3 fl HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 10 ± 0.3 —I ^
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YTAF830
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