Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS200R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS100R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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6A243
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FS150R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS150R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
6A243
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FS75R06KE3 IGBT-Module IGBT-modules EconoPACK mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™ with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS75R06KE3
CEE32
1322D14
CEE326
632CF5CD
1CE73
2313ECEC
3265CDDC14ECF
1231423567896AB2CDEF1B6
54E36F
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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Quality Technologies optocouplers
Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
SS16/1,
HP19-3EY
00035A
Quality Technologies optocouplers
B613
IC 1296
QT OPTOELECTRONICS
PONT DIODE
0884 qt
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B41 diode smd
Abstract: No abstract text available
Text: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608QR51F/D-AMT Cyan ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emitting Diode. Static electricity and surge damage the LEDS.
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APT1608QR51F/D-AMT
2000pcs
ED4701/100
DSAL4281
DEC/04/2010
B41 diode smd
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B41 diode smd
Abstract: b31 smd diode
Text: 2.2x1.4mm SURFACE MOUNT LED LAMP Part Number: AA2214QR51S/D-AMT Cyan ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emit- Features ting Diode. z High reliability LED package.
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AA2214QR51S/D-AMT
2000pcs
EIAJED4701/100
DSAL4279
DEC/02/2010
B41 diode smd
b31 smd diode
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diode B61
Abstract: No abstract text available
Text: T-1 3mm CYLINDRICAL LED LAMP Part Number: WP424QR51WT/D-AMT Cyan ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The source color devices are made with InGaN Light Emitting Diode. Static electricity and surge damage the LEDS.
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WP424QR51WT/D-AMT
DSAL4343
DEC/01/2010
diode B61
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semikron semitrans SKM 440 B
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC
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b512F-2
Abstract: L312F CRYDOM b512f-2 M508012F M5010045V M50-100-SB-1200 L522F M508012 CRYDOM efg15f SCR DIODE MODULE
Text: C r y d o m Company Power Modules For Complete Product Specifications c FAX-ON-DEMAND, Call 888-267-9188 for Instant Specs on Your FAX c www.crydom.com Ñ View and Download Specifications Power Modules 4 Crydom is your single source for all your SCR/diode power module needs. Feature highly effective thermal management
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F1842SD600
F1857HD600
F1857SD1200
F1857SD600
EFE15C
F1892D1200
EFE16F
F1892D600
EFF01FF
F1892RD1200
b512F-2
L312F
CRYDOM b512f-2
M508012F
M5010045V
M50-100-SB-1200
L522F
M508012
CRYDOM efg15f
SCR DIODE MODULE
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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SKM 300 CIRCUIT
Abstract: SKM 400 gal 124 IGBT D 145 SKM 300 GB 123 D SKM 600 gb semikron skm 150 gb 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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GAL 700
Abstract: 1002C skm 141
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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300GB
Abstract: GAL 700 semikron skm 300 gar 123 SKM 300 GB 123 D
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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B6-100
300GB
GAL 700
semikron skm 300 gar 123
SKM 300 GB 123 D
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m252512f
Abstract: cc1217 CC1215-ND CC1212-ND m252512 LA 7693 CC1203 CRYDOM b512f-2 B512F-2 CC1217-ND
Text: Fig. 2 — EF Series Fig. 1 — B-2, B-2T Series NEW! SCR/Diode Power Modules 1.25 31.7 These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Applications: Full-wave power rectification for high current DC circuits, heavy duty power controls, electric
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M5050:
M5060:
M50100:
25003-ST
G2-AB02-ST
G2-DA01-ST
G2-DA06-ST
CC1319TR-ND
CC1327TR-ND
G2-AB02-SR
m252512f
cc1217
CC1215-ND
CC1212-ND
m252512
LA 7693
CC1203
CRYDOM b512f-2
B512F-2
CC1217-ND
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skm 152 ga 123
Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C
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1k3a
Abstract: VICTOREEN 440 Cl-49 B6-253 Scans-0017344 general electric
Text: — PRODUCT INFORMATION — Page 1 Diode 1K3-A FOR TV HIGH-VOLTAGE RECTIFIER APPLICATIONS TUBES 22000 VOLTS DC MONOCHROME TYPE X-RADIATION RATING 0.5 MILLIAMPERES DC The 1K3-A is a filamentary diode designed for use in television receivers as the highvoltage rectifier to supply power to the anode of the television picture tube. It is
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SQD65BB75
Abstract: sqd65B
Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.
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SQP65BB75
SQD65BB75
00DEE22
SQD65BB75
sqd65B
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Wf VQE 23 F
Abstract: WF VQE 23 D Wf VQE 23 E wf vqe 24 d WF vqe 24 e WF VQE 22 c WF VQE 22 d wf vqe 14 e wf vqe 24 f wf vqe 23
Text: 5EMIKR0N Absolute Maximum Ratings Symbol VcES VcGH lc ICM Vges P.o< Ti, Tag Visol humidity climate Values Conditions ' Rge = 20 k ii Tease = 25/80 "0 Tease ~ 25/80 C . tp — 1 ms per IGBT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode
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B697
Abstract: 10R-A10
Text: SEMIKRON Absolute Maximum Ratings Symbol VcES VcGR lc ICM VqeS Plot Tj. Ts* Visol humidity climate Rge = 20 k£i Tease = 25/80 “C Tease ~ 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC68T.1 Inverse Diode Tease = 25/80 C If= - lc
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IEC68T
B697
10R-A10
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10
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TFM 1380 T
Abstract: No abstract text available
Text: 1D I 3 O O M - O 5 O 300a Ä ± / < 7— ✓\ ° 7 - ' Outline Drawings POWER TRANSISTOR MODULE • Features • hFE*v'' \.v High DC Current Gain • High speed switching Including Free Wheeling Diode .Insulated Type • A p p licatio n s • ’X M .t) 7*4 "/•?■>?
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E82988
1995-9Cl95t/R89)
TFM 1380 T
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