DIODE 1.0A 1000V
Abstract: DIODE B44 marking B44
Text: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Cathode mark 11 Lot No. B44 0 6 Abridged type name
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ERB44
ERB44
DIODE 1.0A 1000V
DIODE B44
marking B44
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diode b44
Abstract: ERB44 diode 1000V 10a marking B44 b4406
Text: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Cathode mark 11 Lot No. B44 0 6 Abridged type name
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ERB44
ERB44
diode b44
diode 1000V 10a
marking B44
b4406
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diode 1000V 10a
Abstract: No abstract text available
Text: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics Cathode mark
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ERB44
ig-10
ERB44
diode 1000V 10a
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ka2 DIODE
Abstract: SD3553C DIODE B44
Text: Preliminary Data Sheets I2098 SD3553C.S20R SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST rectifier diode series 3500 A 2.0 µs recovery time High voltage ratings up to 2500 V High current capability Optimized turn on and turn off characteristics
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I2098
SD3553C.
ka2 DIODE
SD3553C
DIODE B44
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diode 1000V 10a
Abstract: marking B44 b4406 DIODE B44 10MSA ERB44 DIODE 1.0A 1000V
Text: ERB44 1.0A ( 200 to 1000V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications High speed switching 種 機 Maximum ratings and characteristics
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ERB44
ERB44
diode 1000V 10a
marking B44
b4406
DIODE B44
10MSA
DIODE 1.0A 1000V
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DIODE B44
Abstract: I2097
Text: Preliminary Data Sheet I2097 SD2053C.S50R SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST rectifier diode series 2000 A 5.0 µs recovery time High voltage ratings up to 4500 V High current capability Optimized turn on and turn off characteristics
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I2097
SD2053C.
DIODE B44
I2097
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B4 diode
Abstract: No abstract text available
Text: SKiiP 12NAB066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *#5 @ 5. '&0,
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12NAB066V1
B4 diode
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semikron thyristor skt 16
Abstract: No abstract text available
Text: SKT 16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor SKT 16 Features
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skiip25ac126v1
Abstract: Diode 6a8
Text: SKiiP 25AC126V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter , $3 9 ,$3 1 ' 2 0
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25AC126V1
skiip25ac126v1
Diode 6a8
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Untitled
Abstract: No abstract text available
Text: Aluminum electrolytic capacitors Capacitors with screw terminals Series/Type: B44020, B44030 Date: September 2006 EPCOS AG 2007. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B44020,
B44030
B44020
B44020B0001B025
B44020B0002B030
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Untitled
Abstract: No abstract text available
Text: Aluminum electrolytic capacitors Capacitors with screw terminals Series/Type: B44020, B44030 Date: December 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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B44020,
B44030
B44020
B44020B0001B025
B44020B0002B030
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BA314
Abstract: IEC134 UBC671 bb53
Text: N AUER PH IL IP S/ DIS CR ETE blE D b b S B ^ l A oosbiso a?i BA314 LOW VOLTAGE STABISTOR Silicon planar epitaxial diode in DO-35 envelope. This diode is intended fo r low voltage stabilizing e.g. bias stabilizer in ciass-B o u tp u t stages, clipping, clamping and meter protection.
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BA314
DO-35
DO-35
OD-27)
DD2bl52
BA314
IEC134
UBC671
bb53
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Untitled
Abstract: No abstract text available
Text: l I T T °N ÏNB/LITTON SOLI» Litton SbE D • 55442GG 00004^5 b44 ■ LITT PRODUCT ANNOUNCEMENT Solid State Division 140 GHz InP GUNN DIODE • LOW COST POWER AT VERY HIGH FREQUNCY • RELIABLE SOLID STATE POWER SOURCE • HIGH EFFICIENCY, LOW VOLTAGE AND CURRENT
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55442GG
LST-9123S1
T-9123S
123S3
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RB441Q40
Abstract: No abstract text available
Text: Diodes Schottky Barrier Diode RB441Q-40 •Applications •External dimensions Units: mm Low current rectification •Features Schottky barrier diodes 1) Glass sealed envelope 2)Small pitch enables insertion on PCBs 3)High reliability •Construction Silicon epitaxial
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RB441Q-40
10mter
100mA
B441Q-40
RB441Q40
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1M823-1
Abstract: 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 Hav 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,
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MIL-S-19500/159H
MIL-S-19500/159G
1N821,
1N823,
1N825,
1N827,
1N829,
1N821-1,
1N823-1,
1N825-1,
1M823-1
1N827
DIODE 1N827
1N821-1
1N823
DIODE 1N825
1N829-1
1N825
1N827-1
1N821-1 JANTX
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 64. W Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz • Low resistance and short carrier lifetime • For frequencies up to 3 GHz BAR 64-04W Cl/AZ M BAR 64-05W
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4-04W
4-05W
4-06W
Q62702-A1264
Q62702-A1265
Q62702-A1266
OT-323
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L9959
Abstract: "MC 140" transistor B444 BU71 B444 MODULE L995 30S3 M206 T151 T460
Text: 2DI5OA-14OC50A )V /< 7 — POW ER TRA N SISTO R MODULE • ¡ t t S : Features • High Voltage • 7 ' ) - / + ^ U > ? 9 4 t — K rtflft • ASO A'TSv,' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type : Applications • Power Switching
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2DI5OA-14O
E82988
L995-9
95t/R89)
L9959
"MC 140" transistor
B444
BU71
B444 MODULE
L995
30S3
M206
T151
T460
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the
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QCA200BA60
E76102
7T11243
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EVK71-050
Abstract: SRFE T151 F25 transistor
Text: EVK71-050 75a POWER TRANSISTOR MODULE : Features • 7 V —ft 4 V • y < KrtSK Including Free Wheeling Diode High DC Current Gain • ÎÊ # t Wt Insulated Type •fflüÊ : Applications • Power Switching •A C t - ^ J » • DC ^ AC Motor Controls —9 W &
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EVK71-050
E82988
EHTS30S3%
l95t/R89
SRFE
T151
F25 transistor
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JU003
Abstract: No abstract text available
Text: 2DI5OZ-14O 50a * ± / < 7 - jE S > 3 . - ì W ’ Outline Drawings POWER TRANSISTOR MODULE : Features • ïf t liJ E High Voltage • 7 'J — Kfàjft • Including F re e w h e e lin g Diode Excellent Safe Operating Area • fôSiüJfé Insulated Type
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2DI5OZ-14O
E82988
19S24^
I95t/R89)
Sh150
JU003
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EVK71-050
Abstract: No abstract text available
Text: EVK71-050 75A : Outline Drawings ' <7 - POW ER T R A N S IST O R M ODULE : Features • 7 y - * * y > ^ y -r * - • hFE*''S5L' • K rtu Including Free W heeling Diode High DC Current Gain Insulated Type 1 Applications • Power Sw itching • A C « - * * »
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EVK71-050
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B245A
Abstract: k 151 transistor
Text: 2DI5OA-14O 50a ✓ * 9 — ,\ = 7 > j> 7 * 9 i ± / Ñn — í n .— ÌV : Outline Drawings j.- ;u POWER TRANSISTOR MODULE • i f è ë : F e a tu re s • & iiJ± High Voltage •7 U— U > ¥ ¥ 'f + — Krtflft • ASO •S Including Free W heeling Diode
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2DI5OA-14O
E82988
l95t/R89)
B245A
k 151 transistor
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B446
Abstract: transistor B446 SAL 41 B-446 2di50z application T151 B-447
Text: 2DI5OZ-14O 50a * ± / < 7 - jE S > 3 . - ì W ’ Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • ïf t liJ E High Voltage • 7 'J — Kfàjft • Including F re e w h e e lin g Diode Excellent Safe Operating Area • fôSiüJfé Insulated Type
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2DI5OZ-14OC50A)
E82988
095t/R89
B446
transistor B446
SAL 41
B-446
2di50z application
T151
B-447
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stk audio power amplifiers
Abstract: D556 stk 80 w
Text: TTETSa? rZ J m 7# DD 4L .0 47 b44 • SGTH S G S -T H O M S O N [ » ^ » [IC T IiM O Û S STK 4 N3 0 L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N30L . ■ . . ■ V dss RDS(on Id 300 V < 1 .4 Q 4 .2 A TYPICAL RDS(on) = 1.25 Q AVALANCHE RUGGED TECHNOLOGY
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STK4N30L
OT-82
OT-194
7TST237
G04b0S3
stk audio power amplifiers
D556
stk 80 w
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