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    DIODE B2L Search Results

    DIODE B2L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE B2L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    code diode b2l

    Abstract: No abstract text available
    Text: MBR0520L SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0718, Rev. - Green Products MBR0520L SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection


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    PDF MBR0520L N0718, MBR0520L OD-123, MIL-STD-202xpressed code diode b2l

    Untitled

    Abstract: No abstract text available
    Text: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.


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    PDF REJ03G0043-0400 PTSP0002ZA-A

    MARK B3L

    Abstract: diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L
    Text: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.


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    PDF REJ03G0043-0400 REJ03G0043-0400 PTSP0002ZA-A MARK B3L diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L

    B140

    Abstract: CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l
    Text: PL IA NT CO M *R oH S Features • ■ ■ ■ Applications RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode


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    PDF CD216A-B120L DO-216AA RS-481-A B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l

    smd diode B140

    Abstract: smd b140 diode b3l JEDEC DO-216aa code diode b2e DO216AA
    Text: T PL IA N M CO *R oH S Features Applications • RoHS compliant* ■ Cellular phones ■ Low profile ■ PDAs ■ Surface mount ■ Desktop PCs and notebooks ■ Very low forward voltage drop ■ Digital cameras ■ MP3 players CD216A-B120L~B140 MITE Chip Diode


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    PDF CD216A-B120L DO-216AA smd diode B140 smd b140 diode b3l JEDEC DO-216aa code diode b2e DO216AA

    smd diode B140

    Abstract: DIODE B140
    Text: T PL IA N M CO *R oH S Features Applications • RoHS compliant* ■ Cellular phones ■ Low profile ■ PDAs ■ Surface mount ■ Desktop PCs and notebooks ■ Very low forward voltage drop ■ Digital cameras ■ MP3 players CD216A-B120L~B140 MITE Chip Diode


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    PDF CD216A-B120L DO-216AA smd diode B140 DIODE B140

    CD216A-B120L

    Abstract: B140 CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l diode b140
    Text: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode


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    PDF CD216A-B120L DO-216AA RS-481-A CD216A-B120L B140 CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l diode b140

    diode b2l

    Abstract: code diode b2l diode b3l 050 B3L DO216-AA DO216AA
    Text: NT IA PL M • *R oH S CO Features ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode


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    PDF CD216A-B120L DO-216AA diode b2l code diode b2l diode b3l 050 B3L DO216-AA DO216AA

    code diode b2l

    Abstract: B2L DIODE DO216AA B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
    Text: PL IA NT CO M *R oH S Features • ■ ■ ■ ■ Applications Lead free RoHS compliant* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode


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    PDF CD216A-B120L DO-216AA RS-481-A code diode b2l B2L DIODE DO216AA B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140

    diode b140

    Abstract: diode b2l code diode b2l B2L DIODE b4s 050 B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
    Text: Features • ■ ■ Applications Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly


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    PDF CD216A-B120L DO-216AA RS-481-A e/IPA0303 diode b140 diode b2l code diode b2l B2L DIODE b4s 050 B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140

    Untitled

    Abstract: No abstract text available
    Text: APT50M75B2LL G APT50M75LLL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 500V POWER MOS 7 R MOSFET 57A 0.075 Ω B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


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    PDF APT50M75B2LL APT50M75LLL Puls22) O-247

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL APT5010LLL 0.100Ω 500V 46A R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT5010B2LL APT5010LLL O-264 O-264 O-247

    009F

    Abstract: APT6010B2LL APT6010LLL 6710 mosfet
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT6010B2LL APT6010LLL O-264 O-264 O-247 009F APT6010B2LL APT6010LLL 6710 mosfet

    Untitled

    Abstract: No abstract text available
    Text: APT6013B2LL APT6013LLL 0.130Ω 600V 43A R POWER MOS 7 MOSFET B2LL T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT6013B2LL APT6013LLL O-264 O-264 O-247

    DD2030

    Abstract: No abstract text available
    Text: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT6013B2LL APT6013LLL O-264 O-247 DD2030

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


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    PDF APT5010B2LL APT5010LLL O-247

    APT5010B2LL

    Abstract: APT5010LLL
    Text: APT5010B2LL APT5010LLL 500V 46A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT5010B2LL APT5010LLL O-264 O-264 O-247 APT5010B2LL APT5010LLL

    APT8020B2LL

    Abstract: APT8020LLL
    Text: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT8020B2LL APT8020LLL O-264 O-264 O-247 APT8020B2LL APT8020LLL

    an 7073

    Abstract: APT8024B2LL APT8024LLL 106F
    Text: APT8024B2LL APT8024LLL 800V 31A 0.240Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT8024B2LL APT8024LLL O-264 O-264 O-247 an 7073 APT8024B2LL APT8024LLL 106F

    apt10035lllg

    Abstract: No abstract text available
    Text: APT10035B2LL G APT10035LLL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 1000V 28A 0.350Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


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    PDF APT10035B2LL APT10035LLL O-247 apt10035lllg

    Untitled

    Abstract: No abstract text available
    Text: APT8024B2LL APT8024LLL 800V 31A 0.240Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT8024B2LL APT8024LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6017B2LL APT6017LLL 600V 35A 0.170Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT6017B2LL APT6017LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6017B2LL APT6017LLL 600V 35A 0.170Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT6017B2LL APT6017LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


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    PDF APT8020B2LL APT8020LLL O-264 O-264 O-247