C3D0406
Abstract: C3D04065 C3D04 D0406 TO-220 package thermal resistance CSD10060 C3D04065A
Text: C3D04065A–Silicon Carbide Schottky Diode VRRM = 650 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D04065A
650-Volt
O-220-2
C3D04065A
C3D0406
C3D04065
C3D04
D0406
TO-220 package thermal resistance
CSD10060
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c4d02120
Abstract: C4D02120A
Text: C4D02120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 2 A Qc =15 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching
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C4D02120A
O-220-2
C4D02120A
C4D02120
c4d02120
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5082-2565
Abstract: hp 2817 hp 5082 2207 S3H 02 diode U1Z 07 u1z 99 hp 5082 2817 5082-2500 5082-2711 5082-2766
Text: COMPONENTS 5082 -2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6 5082 - 2 7 9 4 /9 5 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS
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VALVO
Abstract: No abstract text available
Text: 12 D o u L I e-d io d e v a ria b le-m u p e n to d e This valve combines a pentode w ith tw o diodes, bu ilt round a common cathode. The pentode section has variable characteristics, sliding screen voltage having been adopted w ith a view to th e use of the valve as an I .F amplifier ; th e anode current is accordingly
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S3H 02 diode
Abstract: hp 5082 2207 U1Z 09 5082-2202 F 5082 HP 2202 5082-2200 DIODE S3H
Text: SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS AND DETECTORS COMPONENTS SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD 5082 - 2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6
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Untitled
Abstract: No abstract text available
Text: LK SLIM POWER RELAY WITH HIGH INRUSH CURRENT CAPABILITY LK-RELAYS UL File No.: E43028 CSA File No.: LR26550 • High insulation resistance between contact and coil C re e p a g e d is ta n c e a n d c le a r a n c e s in co m p lia n c e w ith IE C 6 5 1 Creepage distance and clearances
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E43028
LR26550
IEC65)
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diode ax 277
Abstract: No abstract text available
Text: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S40HC1R5 Package I MTO-3P 22± aa%j T y p e No. » 5 . 0 ±0-3 \r D a te code >Tjl25°C US V f = 0.41V r +0.5 lo-o.^ 4>33±0-2 15V 4 0 A Unit • mm -, \ 2 . 0 ±0-3 S # 2 . 4 ±0-3
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S40HC1R5
Tjl25
S40HC
50HziE5K
50H0HC1R5
25tTYP
J515-5
diode ax 277
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diode f40c
Abstract: 3845a ESM6045DV
Text: 3DE m D 7«ÌSRS37 GD3GM74 4 • ESM6045DF ESM6045DV SGS-THOMSON [*[im[I gTI[iMQ(gS S G S-THOMSON ' NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE
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7TSRS37
GD3GM74
ESM6045DF
ESM6045DV
T-91-20
O-240)
diode f40c
3845a
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KSS 240
Abstract: No abstract text available
Text: SIEMENS BUZ 31 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 31 Vds 200 V to 14.5 A ^DS on 0.2 f l Package Ordering Code TO-220 AB C67078-S.1304-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values
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O-220
C67078-S
1304-A2
GPT35I55
KSS 240
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BUK445-100A
Abstract: BUK445-100B BT diode BUK445
Text: PHILIPS INT ERNATIONAL bSE D WM 7110flSb O O b a W Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched M ode Power Supplies
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BUK445-100A/B
-SOT186
BUK445-100A
BUK445-100B
BT diode
BUK445
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1N4150
Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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100/iA
1N4150*
1N4450
1N4606
100/tA
1N445I
1N4607
1N460B
DT230C
DT230H
1N4150
D035
JS-2-65-11
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Untitled
Abstract: No abstract text available
Text: # 8-bit R e g is te r/B in a ry Counter w ith 3 -s ta te I/O T h e H D 7 4 H C 5 9 3 c o n sists of a parallel input, 8-bit storage register feeding an 8-bit bin ary counter. and the clocks. co u n te r have in d ivid u al | PIN ARRANGEMENT B o th the register
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C20T06Q C20T06Q-11A 22A/60V GCQ20A06 FCQ20A06 FEATURES o 1SQUARE-PA k I TO-263AB SMD Packaged in 24mm Tape and Reel : C20T06Q O Tabless TO-220: C20T06Q-11A o T0-220AB : GCQ20A06 o T0-220AB Fully Molded Isolation : FCQ20A06 o Dual Diodes - Cathode
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C20T06Q
C20T06Q-11A
2A/60V
GCQ20A06
FCQ20A06
O-263AB
O-220:
T0-220AB
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Untitled
Abstract: No abstract text available
Text: r Z Z S G S T H O M S O N ^ 7# s LUOTF^ORODSi T M M B A R 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION MINIMELF (Glass Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS (limiting values)
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N2N2222
Abstract: LT 8232 LM 555 National lm 317 battery charger circuits lm 555 LM 338 LM 358 OPAM 5X126 lm358 li ion charger circuit 181x1
Text: Semiconductor LM3420-4.2, -8.2, -8.4, -12.6, -16.8 Lithium-Ion Battery Charge Controller General Description The LM 3420 is available in a sub-m iniature 5-lead SO T23-5 surface m ount package thus allowing very com pact designs. The LM 3420 series of controllers are m onolithic integrated
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LM3420-4
LM3420
p0-272-9959
N2N2222
LT 8232
LM 555 National
lm 317 battery charger circuits
lm 555
LM 338
LM 358 OPAM
5X126
lm358 li ion charger circuit
181x1
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Untitled
Abstract: No abstract text available
Text: POWEREX INC ßOUUEREX liSE D • 75T4b21 0 0 0 3 S n □ ■ T -¿ 15-J.3 CC42_ 60 CN47_ 60 Powerex, Inc., Hillis Street, Youngwoad, Pennsylvania 15 6 9 7 412 9 2 5 - 7 2 7 2 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75. IS
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75T4b21
BP107
Amperes/400-1400
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Untitled
Abstract: No abstract text available
Text: LASER COMPONENTS GmbH Address LASERI COMPONENTS Werner-von-Siemens-Str. 15 P.O. Box 1129 D-82140 Olching D-82133 Olching Phone+49-8142-28640 • F ax+49-8142-286411 E-Mail: [email protected] • homepage: http://www.lasercomponents.de Datasheet for
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D-82140
D-82133
IRCC-2535.
IRCC-2535-GMP.
364-HV-1-46_
31/Jan/2003
364-HV-1-46
31/Jan/2003
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IRFP350
Abstract: IRFP 350 irfp 350 n TO218 package
Text: ZìiSGS-THOMSON EtJOT@res IRFP350 IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F P 3 5 0 IR F P 3 50 FI V dss RDS on Id 400 V 400 V 0 .3 Q 0.3 a 16 A 10 A . AVALANCHE RUGGEDNESS TECHNOLOGY • 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C
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IRFP350FI
IRFP350
IRFP350FI
IRFP350/FI
IRFP350
IRFP 350
irfp 350 n
TO218 package
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Semicon volume 1
Abstract: HVC-50F s5a1 LTA 902 sx
Text: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage
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1TP600
CTP700
CTP800
CTP1000
CTP1200
VB100
VB200
VB300
VB400
VB500
Semicon volume 1
HVC-50F
s5a1
LTA 902 sx
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 347 50 V h 45 A ^bs on Package Ordering Code 0.03 n TO-218AA C67078-S31 15-A2 Maximum Ratings Parameter Symbol Continuous drain current
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O-218AA
C67078-S31
15-A2
fl23SbOS
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Untitled
Abstract: No abstract text available
Text: - TC74VHC574F/FW/FS OCTAL D -TYPE FLIP-FLOP WITH 3 -STATE OUTPUT_ The TC74VHC574 is advanced high speed CMOS OCTAL FLIP - FLOP with 3 - STATE OUTPUT fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent
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TC74VHC574F/FW/FS
TC74VHC574
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M2279
Abstract: S3G73 25p 1200r BTS59-1200 I 342 GATE TURN-OFF THYRISTORS SOT-93 bts59 BTS59-1200R BTS59-850R IEC134
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 5BE ]> • 711002b 0053071 34E ■ P H I N b It>5y bfcl-Ufcö _ Jv_ FAST GATE TURN-OFF THYRISTORS T h y ris to rs in SOT-93 envelopes capable o f being tu rn e d b o th on and o f f via th e gate. T hey are suitable fo r use in high-frequency inverters, pow er supplies, m o to r c o n tro l etc. The devices have no
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OT-93
bts59-850r
1000r
1200r
BTS59
M2279
S3G73
25p 1200r
BTS59-1200
I 342
GATE TURN-OFF THYRISTORS SOT-93
BTS59-1200R
IEC134
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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AC187
BC157
BC158
BC159
BC186
BC187
BD201
BD202
BD203
BD204
TCA160
BY164
Mullard C296
TAA310A
TAA435
TAA700
TBA550
TBA480
PCC88
TAA300
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rca transistor manual
Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis
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