transistor k43
Abstract: FBAS40TW marking k43 diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS40TW
WBFBP-06C
transistor k43
FBAS40TW
marking k43 diode
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MAD1104
Abstract: 628-200
Text: MAD1104 and MAD1104e3 Switching Diode Array Steering Diode TVS Array SCOTTSDALE DIVISION APPEARANCE WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package
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MAD1104
MAD1104e3
14-PIN
MAD1104,
628-200
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Untitled
Abstract: No abstract text available
Text: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage
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UC1612
UC3612
UC3612
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
UC3610DW
UC3610DWTR
UC3610N
UC3610Q
UC3610QTR
SSYA008
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marking u1s SOT-143
Abstract: Marking code U1s sot143 marking code u1s switch diode DIODE JS Q62702-G38 DIODE Q marking
Text: Silicon Switching Diode Array ● Bridge configuration ● High-speed switch diode chip BGX 50 A Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage
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Q62702-G38
OT-143
Pac50
marking u1s SOT-143
Marking code U1s
sot143 marking code u1s
switch diode
DIODE JS
Q62702-G38
DIODE Q marking
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SM6503A
Abstract: SM6503AD SM6503AH
Text: SM6503A Diode Array for ESD Protection OVERVIEW The SM6503A is the Diode array for ESD protection. 5 circuits consisted of diode element are integrated into ultra-small 6 pin plastic package. It is the most appropriate to protect the external interface circuit of portable
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SM6503A
SM6503A
20MIN
SM6503AH
OT23-6)
OT23-6
SM6503AD
NC0023CE
SM6503AD
SM6503AH
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Untitled
Abstract: No abstract text available
Text: UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339B
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UC3610N
Abstract: UC2610N UC3610 UC1610 UC1610DW UC1610J UC2610 UC2610DW UC2610J UC3610DW
Text: UC1610 UC3610 SLUS339A – JUNE 1993 – REVISED MAY 2001 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for
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UC1610
UC3610
SLUS339A
UC16tion
UC3610N
UC2610N
UC3610
UC1610
UC1610DW
UC1610J
UC2610
UC2610DW
UC2610J
UC3610DW
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MMAD1108
Abstract: Diode marking code e3
Text: MMAD1108 and MMAD1108e3 Switching Diode Array Steering Diode TVS Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT,
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MMAD1108
MMAD1108e3
16-PIN
MMAD1108,
Diode marking code e3
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MMAD1109
Abstract: MMAD1107 msc diode
Text: MMAD1109 and MMAD1109e3 Switching Diode Array Steering Diode TVS Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering diodes protecting up to seven I/O ports from ESD, EFT,
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MMAD1109
MMAD1109e3
14-PIN
MMAD1109,
MMAD1107
msc diode
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marking tp sot23-6
Abstract: MARKING 53 SOT23-6 SOT23-6 MARKING DIODE V38 marking DIODE sot23-6 js marking SOT23-6 Marking TM SP3050 Marking c9 SOT23-6 A2 marking diode esd diode sot23-6
Text: SPA TVS Diode Array Products Low Capacitance Diode Array for ESD and Surge Protection SP3050 SERIES RoHS Pb GREEN The SP3050 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can
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SP3050
5/50ns)
4NBMM405QBDLBHJOH
SP3050-04HTG
OT23-6
OT-23
180mm
EIA-481
marking tp sot23-6
MARKING 53 SOT23-6
SOT23-6 MARKING
DIODE V38 marking
DIODE sot23-6 js marking
SOT23-6 Marking TM
Marking c9 SOT23-6
A2 marking diode
esd diode sot23-6
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diode 1334
Abstract: 1334 diode power diode with piv of 30v CA3141E CA3141 high voltage diodes MS-001-BB VF10 e16 diode 533 1334 diode
Text: CA3141 S E M I C O N D U C T O R High-Voltage Diode Array For Commercial, Industrial and Military Applications July 1996 Features Description • Matched Monolithic Construction - VF Match Each Diode Pair . . . . 0.55mV At IF = 1mA The CA3141E High Voltage Diode Array Consists of ten general purpose high reverse breakdown diodes. Six diodes are
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CA3141
CA3141E
CA3141
1-800-4-HARRIS
diode 1334
1334 diode
power diode with piv of 30v
high voltage diodes
MS-001-BB
VF10
e16 diode
533 1334 diode
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ARR20C020
Abstract: No abstract text available
Text: Industrial Microphotonics Company 20W CW Laser Diode Array Part Number: ARR20C020 E PACKAGE • Packaged Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER
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ARR20C020
785-1064nm)
------20W
laser2000
B-10/01
ARR20C020
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ARR01C120
Abstract: No abstract text available
Text: Industrial Microphotonics Company 120W CW Laser Diode Array Part Number: ARR01C120 DERRINGER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
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ARR01C120
785-1064nm
------120t
laser2000
B-10/01
ARR01C120
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Untitled
Abstract: No abstract text available
Text: RClamp0508M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive
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do000
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ARR04P2500
Abstract: No abstract text available
Text: Industrial Microphotonics Company 2500W QCW Laser Diode Array Part Number: ARR04P2500 Z PACKAGE • Packaged 72 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER
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ARR04P2500
785-1064nm
------2500Wt
laser2000
B-10/01
ARR04P2500
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SEMTECH YEAR DATE CODE
Abstract: SLP2020P6 0504N
Text: RClamp0504N RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive
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Untitled
Abstract: No abstract text available
Text: RClamp7002M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive
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RClampTM7002M
MSOP-10L
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land pattern for msOP 10
Abstract: marking code bbb MO-187 MSOP-10L POWER SUPPLY BOARD 20 94V0 MSOP10L
Text: RClamp7002M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive
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RClamp7002M
RClampTM7002M
MSOP-10L
7002M
land pattern for msOP 10
marking code bbb
MO-187
POWER SUPPLY BOARD 20 94V0
MSOP10L
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Untitled
Abstract: No abstract text available
Text: 1N5772 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 10-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
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1N5772
10-PIN
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
capC1610
UC3610
100mA
030S4
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Untitled
Abstract: No abstract text available
Text: y mumt UC1611 UC3611 UNITRODE Quad Schottky Diode Array FEATURES DESCRIPTION Matched, Four-Diode Monolithic Array This four-diode array is designed for general purpose use as individual di odes or as a high-speed, high-current bridge. It is particularly useful on
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UC1611
UC3611
UC3611
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diode fr 210
Abstract: 1506 diode diode s 360
Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Vr 50 V Peak reverse voltage V rm 70 Forward current If 140 mA Total power dissipation, Ts = 74 ‘ C
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Untitled
Abstract: No abstract text available
Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this
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UC1610
UC3610
UC3610
ambient40V
UC1611
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