Le57D11
Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Text: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the
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Le57D11
Legerity SLAC
L11A050AA
jr223
RTX22
AM79Q021
diode AR s1 55
CD11
CD12
CD22
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AO6604
Abstract: No abstract text available
Text: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO6604
AO6604
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AO4612
Abstract: Complementary diode AR s1 56
Text: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4612
AO4612
Complementary
diode AR s1 56
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Untitled
Abstract: No abstract text available
Text: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4612
AO4612
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3X2A
Abstract: No abstract text available
Text: AON4803 20V P-Channel MOSFET General Description Product Summary The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON4803
AON4803
15nsient
3X2A
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Untitled
Abstract: No abstract text available
Text: AO4892 100V Dual N-Channel MOSFET General Description Product Summary The AO4892 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an
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AO4892
AO4892
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AON4803
Abstract: No abstract text available
Text: AON4803 20V Dual P-Channel MOSFET General Description Product Summary The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON4803
AON4803
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Untitled
Abstract: No abstract text available
Text: AO4892 100V Dual N-Channel MOSFET General Description Product Summary The AO4892 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an
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AO4892
AO4892
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STK14N05
Abstract: STK14N06 diode AR s1 56 P032B
Text: STK14N05 STK14N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STK14N05 50 V < 0.12 Ω 14 A STK14N06 60 V < 0.12 Ω 14 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STK14N05
STK14N06
100oC
175oC
OT-82
OT-194
STK14N06
diode AR s1 56
P032B
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STM8405
Abstract: diode AR s1 56 diode AR S1 86 diode AR s1 8N
Text: S T M8405 S amHop Microelectronics C orp. Nov.23, 2004 ver 1.4 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A
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M8405
STM8405
diode AR s1 56
diode AR S1 86
diode AR s1 8N
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ISS133
Abstract: M8305
Text: S T M8305 S amHop Microelectronics C orp. May,13 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID
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M8305
ISS133
M8305
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diode AR S1 86
Abstract: EQUIVALENT STM8405 STM8405 M8405 diode AR s1 56
Text: S T M8405 S amHop Microelectronics C orp. MAY .04,2006 ver 1.5 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A
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M8405
diode AR S1 86
EQUIVALENT STM8405
STM8405
M8405
diode AR s1 56
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diode AR s1 39
Abstract: No abstract text available
Text: AON6850 100V Dual N-Channel MOSFET SDMOS TM General Description Product Summary The AON6850 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
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AON6850
AON6850
diode AR s1 39
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AON6850
Abstract: diode AR s1 56 diode AR s1 39
Text: AON6850 100V Dual N-Channel MOSFET SDMOS TM General Description Product Summary The AON6850 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
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AON6850
AON6850
diode AR s1 56
diode AR s1 39
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MINI SMA
Abstract: No abstract text available
Text: MS 120 THR U MS 1100 C HIP S C HOT T K Y B AR R IE R DIODE S MINI/SOD-123 0.154 3.9 0.138(3.5) Pla stic p a c ka ge ha s Und e rwrite rs La b o ra to ry Fla m m a b ility C la ssific a tio n 94 V-0 Utilizing Fla m e • Re ta rd a nt Ep o xy Mo ld ing C o m p o und
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MINI/SOD-123
ML-S-19
300us
MINI SMA
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Untitled
Abstract: No abstract text available
Text: AON6971 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Q1
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AON6971
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AON6970
Abstract: No abstract text available
Text: AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Q1
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AON6970
AON6970
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Voltage Doubler with 555 circuit
Abstract: LNK562-564 LNK564 LNK562 LNK562P LNK563P LNK564P M52240 m52240539141
Text: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC
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LNK562-564
Voltage Doubler with 555 circuit
LNK562-564
LNK564
LNK562
LNK562P
LNK563P
LNK564P
M52240
m52240539141
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LNK564
Abstract: LNK562-564 DIP-8B EE16 core transformer HIGH FREQUENCY Transformer ee19 LNK563 LNK562 LNK562P LNK563P LNK564P
Text: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC
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LNK562-564
LNK564
LNK562-564
DIP-8B
EE16 core transformer
HIGH FREQUENCY Transformer ee19
LNK563
LNK562
LNK562P
LNK563P
LNK564P
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LNK564
Abstract: HIGH FREQUENCY Transformer ee19 LNK562-564 Transformer ee19 SMD 564 regulator 8 pin SMD ic 4570 datasheet DIP-8B EE16 core transformer W 5% ZENER 1N4003 LNK562
Text: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC
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LNK562-564
LNK564
HIGH FREQUENCY Transformer ee19
LNK562-564
Transformer ee19
SMD 564 regulator
8 pin SMD ic 4570 datasheet
DIP-8B
EE16 core transformer
W 5% ZENER 1N4003
LNK562
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564 smd 6 pin
Abstract: No abstract text available
Text: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC
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LNK562-564
564 smd 6 pin
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SKM652
Abstract: SKM692F SKM682F
Text: SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ô S E M IK R O N Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj.Tstg Visol humidity climate Values Units 1000 1000 9 36 ±20 225 - 5 5 . . + 150 2500 Class F 55/150/56 V V Conditions 1 R gs = 20 k fì
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ai3bLj71
fll3bb71
T-39-15
SKM651
SKM652F
SKM681F
SKM682F
SKM691F
SKM692F
SKM652
SKM692F
SKM682F
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SK 10 BAT 065
Abstract: 0/SK 10 BAT 065 20/SK 10 BAT 065
Text: A dvanced P o w er Te c h n o lo g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025a 75A 0.030Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd *DM VGS V GSM PD t j ,t stg All Ratings: Tc = 25°C unless otherwise specified.
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APT10M25BNR
APT10M30BNR
APT10M25BNR
APT10M30BNR
Opera00
O-247AD
G0G1415
SK 10 BAT 065
0/SK 10 BAT 065
20/SK 10 BAT 065
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4040 cmos
Abstract: transistor 2N 3055 IC 74ls244 ic 2114 diode S3L 7d ls y201 AY-3-1015 ic 74ls245 IC 74LS02 ic 74LS08
Text: Applied Microsystems Corporation 5020 148th Avenue N.E. P.O. Box 568 Redmond, WA 98052 206 882-2000 (800)426-3925 P R E L I M I N A R Y S E R V I C E M A N U A L EM-180/180B Diagnostic Emulator * Document Number 920-10648 ♦Diagnostic Emulator is a trademark of Applied Microssyterns Corp.
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148th
EM-180/180B
EM-180)
EM-180B)
14Install
8W401
RS401
4040 cmos
transistor 2N 3055
IC 74ls244
ic 2114
diode S3L 7d
ls y201
AY-3-1015
ic 74ls245
IC 74LS02
ic 74LS08
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