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    DIODE ADS MODEL Search Results

    DIODE ADS MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE ADS MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ADS 10 diode

    Abstract: diode ADS model S11 SCHOTTKY diode LSSP pn junction diode HSMS-2665 EESof b286DIE h286 die 5968-1885E
    Text: Diode Detector Simulation using Hewlett-Packard EESOF ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Hewlett-Packard EESOF ADS software package can be used to simulate a diode detector circuit reliably against temperature.


    Original     		PDF HSMS-2865, 5968-1885E ADS 10 diode diode ADS model S11 SCHOTTKY diode LSSP pn junction diode HSMS-2665 EESof b286DIE h286 die 5968-1885E

    S11 SCHOTTKY diode

    Abstract: Avago Technologies Schottky diode ADS model rf detector diode low power LSSP ADS 10 diode HSMS2865 k 2865 EEsof Circuit Components for Manual for ADS B-286
    Text: Diode Detector Simulation using Avago Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Avago Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against


    Original     		PDF HSMS-2865, 5968-1885E S11 SCHOTTKY diode Avago Technologies Schottky diode ADS model rf detector diode low power LSSP ADS 10 diode HSMS2865 k 2865 EEsof Circuit Components for Manual for ADS B-286

    ADS 10 diode

    Abstract: S11 SCHOTTKY diode LSSP diode ADS model rf detector diode low power pn junction diode H286 b286DIE pn junction diode ideality factor HSMS-2865
    Text: Diode Detector Simulation using Agilent Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Agilent Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against temperature.


    Original     		PDF HSMS-2865, 5968-1885E ADS 10 diode S11 SCHOTTKY diode LSSP diode ADS model rf detector diode low power pn junction diode H286 b286DIE pn junction diode ideality factor HSMS-2865

    diode RF 302

    Abstract: APD0520-000 BRO375-09A APD0505-000 APD0510-000 APD0805-000 APD0810-000 APD1510-000 APD1520-000 APD2220-000
    Text: Applications • General purpose, switching Features • Low capacitance • Low resistance • Fast switching • Low distortion attenuation • ADS models available Silicon PIN Diode Chips Skyworks broad product portfolio includes PIN diodes as packaged and bondable silicon


    Original     		PDF BRO375-09A diode RF 302 APD0520-000 BRO375-09A APD0505-000 APD0510-000 APD0805-000 APD0810-000 APD1510-000 APD1520-000 APD2220-000

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    BlackBox Models for Discrete and Integrated Low Noise Amplifiers

    Abstract: No abstract text available
    Text: February 2013 BlackBox Models for Discrete and Integrated Low Noise Amplifiers By Eric Marsan, Stephen Moreschi, Ambarish Roy, and Vivian Tzanakos, Skyworks Solutions, Inc. In communications systems, Low Noise Amplifiers LNAs amplify weak signals received by the antenna.


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    INFINEON TVS diode process

    Abstract: ESD TVS ESD5V3L1B-02LS tvs diodes tvs- diode agilent ads advanced design system TSSLP21
    Text: ESD TVS Diodes Agilent ADS Design Kit Manual Revision: 1.0.4 - October 7, 2011 RF a n d P r o te c ti o n D e vi c e s Edition 2009.11.16 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    Avago 9886

    Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
    Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8


    Original     		PDF com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes

    Untitled

    Abstract: No abstract text available
    Text: WHITE PAPER Accurate System Level Design with Low Noise Amplifier’s BlackBox Models By Eric Marsan, Stephen Moreschi, Ambarish Roy, and Vivian Tzanakos, Skyworks Solutions, Inc. To amplify weak signals received by the antenna in communication systems, low noise amplifiers LNAs are deployed. LNAs


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    PIN diode ADS model

    Abstract: PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860
    Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Agilent HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing


    Original     		PDF HMPP-3865 5988-8470EN PIN diode ADS model PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860

    PIN diode ADS model

    Abstract: PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 HMPP-3865 MCH18 RG200D
    Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Avago Technologies HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing the maximum frequency


    Original     		PDF HMPP-3865 5988-8470EN HSMP-389V HSMP-3890 PIN diode ADS model PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 MCH18 RG200D

    PIN diode ADS model

    Abstract: Microwave PIN diode spice Microwave detector diodes 18 GHz HSMS-285x model ADS 10 diode Microwave detector diodes HSMS-286 diode ADS model spice HSMS-285X
    Text: 6 July 1999 Choosing the Right Diode For Your AGC Detector Raymond W. Waugh Diode Applications, Wireless Semiconductor Division Hewlett-Packard Company AGC Automatic Gain Control loops are used to control the gain or output power of amplifiers in a wide variety


    Original     		PDF HSMS-282x HSMS-285x HSMS-286x theHSMS-282x HSMS-286x PIN diode ADS model Microwave PIN diode spice Microwave detector diodes 18 GHz HSMS-285x model ADS 10 diode Microwave detector diodes HSMS-286 diode ADS model spice

    PIN diode ADS model

    Abstract: APN1002 bluetooth advantages and disadvantages BAP51-02 diode ADS model BAP51 Series RX-2 -G rx tx switch 433 TXC18 microstripline FR4
    Text: Philips Semiconductors Application note AN10173-01 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high performance RF switch. The switch main function is to switch an RF port ANT between the transmitter


    Original     		PDF AN10173-01 BAP64-02 APN1002 PIN diode ADS model bluetooth advantages and disadvantages BAP51-02 diode ADS model BAP51 Series RX-2 -G rx tx switch 433 TXC18 microstripline FR4

    PIN diode ADS model

    Abstract: BAP51-02 HIGH POWER ANTENNA SWITCH PIN DIODE APN1002 BAP64-02 SC79 bluetooth transmitter circuit diagram spdt switch ADS 10 diode tl144
    Text: Application Philips Semiconductors Business Line RF Modules, MST Consumer Title: 2.45 GHz T/R, RF switch for e.g. bluetooth application using PIN diodes Author: Johan Janssen Doc. Nr RNR-T20-APPL-01/1686 Date: 2001-09-25 1 Introduction. One of the most important building blocks for today’s wireless communication equipment is a high


    Original     		PDF RNR-T20-APPL-01/1686 BAP64-02 APN1002 PIN diode ADS model BAP51-02 HIGH POWER ANTENNA SWITCH PIN DIODE SC79 bluetooth transmitter circuit diagram spdt switch ADS 10 diode tl144

    PIN diode ADS model

    Abstract: HSMS-2820 LSSP S11 SCHOTTKY diode 1UW SOT 23 diode ADS model 84192 HSMS2820 HSMS-2825 HSMS-282K
    Text: Design of an Input Matching Network for a DC biased 850 MHz Small Signal Detector Application Note 1187 Introduction This application note describes the use of the HSMS-2820 in small signal detector applications at 850 MHz. The single series diode HSMS-2820 has a detection sensitivity[1] of about 30 mV /µW; i.e., it can produce an output of


    Original     		PDF HSMS-2820 HSMS-2820) OT-23 6042-16b LL2012-F22NK LL2012F3N3K HSMS-2820 5968-7756E PIN diode ADS model LSSP S11 SCHOTTKY diode 1UW SOT 23 diode ADS model 84192 HSMS2820 HSMS-2825 HSMS-282K

    Current-Voltage Based Lookup-Table Diode Model

    Abstract: No abstract text available
    Text: Accurate Scalable Capacitance/Current-Voltage Based Lookup-Table Diode Model Ce-Jun Wei1, Yu Zhu, Hong Yin, D. Whitefield, Frank Gao, and Dylan Bartle SKYWORKS SOLUTION INC., 20 SYLVAN ROAD, WOBURN, MA 01801, USA 1 [email protected] ABSTRACT — A capacitance and Current look-up table based


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    Untitled

    Abstract: No abstract text available
    Text: PRESS RELEASE New Tools Announcement rd Date : December 7th , 2000 Author : Marketing group United Monolithic Semiconductors releases Agilent EEsof EDA ADS Design Kits for its open mode technologies To Business Editors/High Tech Writers ORSAY, Dec 7th, 2000-Team Focus : Foundry Services


    Original     		PDF 2000-Team D-89081

    bipolar transistor ghz s-parameter

    Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10
    Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in


    Original     		PDF HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10

    RF Transistor s-parameter

    Abstract: HBFP-0450 ADS MODEL HBFP0450
    Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction Hewlett-Packard’s HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in a 4-lead SOT-343 SC-70 surface mount package. Described as a high performance, medium


    Original     		PDF HBFP-0450 OT-343 SC-70) 031-inch 5968-2788E RF Transistor s-parameter HBFP-0450 ADS MODEL HBFP0450

    AN2657

    Abstract: walkie-talkie NONLINEAR MODEL LDMOS military mobility DB-54003L-175 PD54003L-E T200 PD54003L microwave heating equations
    Text: AN2657 Application note An innovative verilog model for predicting LDMOS DC, small and large signal behavior Introduction To reduce the design cycle time and cost for wireless applications it is useful to have models that can help RF Engineers predict and simulate the behavior of RF power transistors.


    Original     		PDF AN2657 AN2657 walkie-talkie NONLINEAR MODEL LDMOS military mobility DB-54003L-175 PD54003L-E T200 PD54003L microwave heating equations

    igbt spice model

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR
    Text: Power Semiconductor Application Note AN_PSM2e IEEE Industry Applications Society Annual Meeting New Orleans, Louisiana, October 5-9, 1997 Parameter Extraction Methodology and Validation for an Electro-Thermal Physics-Based NPT IGBT Model J. Sigg, P. Türkes, R. Kraus*


    Original     		PDF D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet IGBT THEORY AND APPLICATIONS calculation of IGBT snubber shockley diode spice shockley diode SIEMENS THYRISTOR

    triangle wave

    Abstract: ADS1210 ADS1211 ADS1212 ADS1213 REF1004
    Text: OVERDRIVING THE INPUTS TO THE ADS1210, ADS1211, ADS1212, AND ADS1213 By Bonnie C. Baker A common situation, yet undesirable condition, is to have the input signal of an A/D converter such as one of BurrBrown’s delta-sigma converters overdrive the input stage.


    Original     		PDF ADS1210, ADS1211, ADS1212, ADS1213 ADS1212 ADS1213 10Vp-p. triangle wave ADS1210 ADS1211 REF1004

    Untitled

    Abstract: No abstract text available
    Text: bbS3R31 D02b4SA ADS LRE D N AMER PHILIPS/DISCRETE IAPX B Y 228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television


    OCR Scan     		PDF bbS3R31 D02b4SA OD-64. D02b4fe BY228