A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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free pdf transistor a4s
Abstract: marking code a4s SOT-23 marking A4s diode a4s A4S SOT-23 Q68000-A6622 MARKING a4s SOT-23
Text: Silicon Switching Diode Array BAV 70 For high-speed switching ● Common cathode ● Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage
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Q68000-A6622
OT-23
free pdf transistor a4s
marking code a4s
SOT-23 marking A4s
diode a4s
A4S SOT-23
Q68000-A6622
MARKING a4s SOT-23
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diode a4s
Abstract: marking code a4s A4S SOT-23 Q68000-A6622 DIODE BAV JS v A4s diode
Text: Silicon Switching Diode Array BAV 70 For high-speed switching ● Common cathode ● Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage
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Q68000-A6622
OT-23
diode a4s
marking code a4s
A4S SOT-23
Q68000-A6622
DIODE BAV JS v
A4s diode
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BAV70
Abstract: No abstract text available
Text: BAV70 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70
VPS05161
EHA07004
EHB00066
EHB00067
Jul-31-2001
EHB00068
BAV70
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SOT-23 marking A4s
Abstract: SIEMENS VF 100 Q68000-A6622 marking code a4s a4s sot23 Q68000A6622 diode a4s A4s marking code a4s sot-23 diode A4S SOT-23
Text: Silicon Switching Diode Array BAV 70 For high-speed switching ● Common cathode ● 2 3 1 Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage
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Q68000-A6622
OT-23
SOT-23 marking A4s
SIEMENS VF 100
Q68000-A6622
marking code a4s
a4s sot23
Q68000A6622
diode a4s
A4s marking code
a4s sot-23 diode
A4S SOT-23
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BAV70
Abstract: SOT-23 marking A4s A4S SOT-23
Text: BAV 70 Silicon Switching Diode Array 3 • For high-speed switching applications • Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPS05161
EHA07004
OT-23
EHB00066
EHB00067
Oct-07-1999
EHB00068
BAV70
SOT-23 marking A4s
A4S SOT-23
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BAV70W
Abstract: VSO05561 10TSV
Text: BAV70W Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VSO05561 EHA07179 Type Marking BAV70W A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70W
VSO05561
EHA07179
OT323
Jul-06-2001
EHB00068
EHB00065
BAV70W
VSO05561
10TSV
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SC75
Abstract: BAV70T
Text: BAV70T Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70T
VPS05996
EHA07179
Aug-24-2001
EHB00068
EHB00065
SC75
BAV70T
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BAV70U
Abstract: SC74 10325v
Text: BAV70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration
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BAV70U
VPW09197
EHA07182
Jul-06-2001
EHB00068
EHB00065
BAV70U
SC74
10325v
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EHA07182
Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Text: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s
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VPS05604
EHA07182
OT-363
Tstg10
Oct-07-1999
EHB00068
EHB00065
EHA07182
BAV70S
VPS05604
6C12
5a2 DIODE
C2A26
marking 5a2
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Untitled
Abstract: No abstract text available
Text: BAV 70U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diode arrays in one package 3 Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration
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VPW09197
EHA07182
SC-74
Oct-07-1999
EHB00068
EHB00065
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smd transistor A4S
Abstract: a4s smd transistor smd transistor A1s smd A1s A1s SMD smd a4s transistor A4s smd SMD A1S datasheet BAW222 Z10C
Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! , ! , , , Type BAV222* BAW222* Package SC75 SC75 Configuration
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BAV222
BAW222
OT416)
BAV222
BAV222*
BAW222*
smd transistor A4S
a4s smd transistor
smd transistor A1s
smd A1s
A1s SMD
smd a4s
transistor A4s smd
SMD A1S datasheet
BAW222
Z10C
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smd code A1s
Abstract: DIODE smd marking A4s smd code A4s DIODE smd marking A1s marking a4s SMD A1S DIODE smd marking Ag smd a4s BAW22
Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! , ! , , , Type BAV222* BAW222* Package SC75 SC75 Configuration
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BAV222
BAW222
OT416)
BAV222
BAV222*
BAW222*
BAV222,
BAW222,
smd code A1s
DIODE smd marking A4s
smd code A4s
DIODE smd marking A1s
marking a4s
SMD A1S
DIODE smd marking Ag
smd a4s
BAW22
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SC-75
Abstract: No abstract text available
Text: BAV 70T Silicon Switching Diode Array Preliminary data 3 • For high-speed switching applications • Common cathode 2 C1/C2 3 1 1 2 A1 A2 VPS05996 EHA07179 Type Marking BAV 70T A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SC-75 Maximum Ratings Parameter
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VPS05996
EHA07179
SC-75
Oct-07-1999
EHB00068
EHB00065
SC-75
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BAV70S
Abstract: Q62702-A1097 5a2 DIODE
Text: BAV 70S Silicon Switching Diode Array • For high speed switching applications • Common cathode • Internal galvanic isolated Diodes Arrays in one package Type Marking Ordering Code Pin Configuration BAV 70S A4s 1/4=A1 Q62702-A1097 2/5=A2 Package 3/6=C1/2 SOT-363
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Q62702-A1097
OT-363
Nov-28-1996
BAV70S
Q62702-A1097
5a2 DIODE
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diode a4s
Abstract: BAV70 BAV70S free pdf transistor a4s A4s diode a4s sot23 BAV70U bav70 transistor transistor BAV70 SC75
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration BAV70 BAV70F BAV70L3 BAV70T BAV70W BAV70S BAV70U $ ! " # , ! , , " , Type BAV70 BAV70F* BAV70L3 * BAV70S BAV70T BAV70U BAV70W , , ! Package
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BAV70.
BAV70
BAV70F
BAV70L3
BAV70T
BAV70W
BAV70S
BAV70U
BAV70F*
diode a4s
BAV70
BAV70S
free pdf transistor a4s
A4s diode
a4s sot23
BAV70U
bav70 transistor
transistor BAV70
SC75
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BAV70S
Abstract: BAV70 BAV70T BAV70U BAV70W SC74 SC75 A4S 29 SOt323 marking code 6X
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below BAV70 BAV70T BAV70W BAV70S BAV70U $ ! " # , ! , , " , Type BAV70 BAV70S BAV70T
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BAV70.
BAV70S
BAV70
BAV70T
BAV70W
BAV70S
BAV70U
BAV70
BAV70T
BAV70U
BAV70W
SC74
SC75
A4S 29
SOt323 marking code 6X
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INFINEON PART MARKING
Abstract: A4S 29
Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70
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BAV70.
BAV70S
BAV70
BAV70W
BAV70U
BAV70U
INFINEON PART MARKING
A4S 29
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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OCR Scan
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PDF
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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diode a4s
Abstract: marking code fs 1 sot 323 A4s diode
Text: SIEMENS BAV 70W Silicon Switching Diode Array •For high speed switching applications ■Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 =A1 Q62702-A1030 2 = A2 Package 3 = C1/CÍ SOT-323 Maximum Ratings per Diode Parameter Symbol
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OCR Scan
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PDF
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Q62702-A1030
OT-323
40mmm
diode a4s
marking code fs 1 sot 323
A4s diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BAV 70 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel B A V 70 A4s Q68000-A6622 Pin Configuration Package1) 3 ° SOT-23 Ol Î - K 1 EHA07004 Maximum Ratings per Diode Valúes
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OCR Scan
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PDF
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Q68000-A6622
OT-23
EHA07004
OMOM23
S235bOS
23SLDS
G12D3T3
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marking a4s
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BAV 70 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 70 A4s Q68000-A6622 Pin Configuration Package1) 3 ° fri I SOT-23 K l -S EH A0700« Maximum Ratings per Diode Parameter
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OCR Scan
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PDF
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Q68000-A6622
OT-23
A0700«
BAV70
marking a4s
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BAV 70W Silicon Switching Diode Array • For high speed switching applications >Common cathode C1/C2 _EL n r U 1 =A1 II Pin Configuration Q62702-A1030 CM Ordering Code A4s' < Marking BAV 70W CM Type Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode
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OCR Scan
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PDF
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Q62702-A1030
OT-323
5B35bDS
BAV70W
flE35b05
012040D
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GaAs SPDT IC FET
Abstract: SW-239TR MESFET Application
Text: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon able that operate to 3 GH z as analog attenuators, digital attenuators
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OCR Scan
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ATC100A
AT-210/AT-220
GaAs SPDT IC FET
SW-239TR
MESFET Application
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