61000-4-X
Abstract: industrial process measurement 20KV DIODE AN9607
Text: AN96-07 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS TRANSIENT IMMUNITY STANDARDS: IEC 61000-4-x just prior to contact Air discharge method . Contact discharge is the preferred test method, but air discharge is used where contact discharge cannot be
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AN96-07
61000-4-x
61000-4-X
industrial process measurement
20KV DIODE
AN9607
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AN9607
Abstract: 61000-4-X an96-07 TVS diode iec 61000-4-5 surge
Text: AN96-07 Surging Ideas TVS Diode Application Note PROTECTION PRODUCTS TRANSIENT IMMUNITY STANDARDS: IEC 61000-4-x just prior to contact Air discharge method . Contact discharge is the preferred test method, but air discharge is used where contact discharge cannot be
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AN96-07
61000-4-x
AN9607
61000-4-X
an96-07
TVS diode iec 61000-4-5 surge
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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10KV DIODE
Abstract: No abstract text available
Text: Surging Ideas TVS Diode Application Note AN96-07 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com TRANSIENT IMMUNITY STANDARDS: IEC 1000-4-x On January 1, 1996, exports into Europe began facing some tough transient immunity standards. The International Electrotechnical Commission
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AN96-07
1000-4-x
801-X
10lans
10KV DIODE
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Data Sheet RB160MM-50 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 0.1±0.1 0.05 1.2 lFeatures 1) Small power mold type 3.05 0.12 3.5±0.2 2.6±0.1 0.85 1.6±0.1 PMDU (PMDU) 2) High reliability
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RB160MM-50
OD-123FL
R1102A
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Data Sheet RB160MM-40 lApplication lDimensions Unit : mm General rectification lLand Size Figure (Unit : mm) 0.1±0.1 0.05 1.2 lFeatures 1) Small power mold type 3.05 3.5±0.2 0.12 2.6±0.1 0.85 1.6±0.1 PMDU (PMDU) 2) High reliability
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RB160MM-40
OD-123FL
R1102A
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2 input and gate 24v
Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode
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2SK3575
O-263
2 input and gate 24v
gate drive protection
smd transistor 26
2SK3575
2SK35
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2SK3511
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3511 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.2 2.54-0.2 +0.2 15.25-0.2 Low Ciss: Ciss = 5900 pF TYP. +0.1 0.81-0.1
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2SK3511
O-263
2SK3511
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2SK3510
Abstract: No abstract text available
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3510 TO-263 +0.1 1.27-0.1 Features Super low on-state resistance: +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode +0.1 0.81-0.1 2.54 +0.2
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2SK3510
O-263
2SK3510
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ciss
Abstract: 2SK3432 2SK34
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3432 TO-263 +0.1 1.27-0.1 Features MAX. VGS = 4 V, ID = 42 A Low Ciss: Ciss = 9500 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 6.9 m +0.2 4.57-0.2 +0.2 2.54-0.2
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2SK3432
O-263
ciss
2SK3432
2SK34
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mosfet 4800
Abstract: ,mosfet smd 4800 4800 power mosfet 4800 mosfet 2SJ606 ,Transistor smd 4800
Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ606 TO-263 Unit: mm +0.1 1.27-0.1 Features MAX. VGS = -4.0 V, ID =-42 A Low Ciss: Ciss = 4800 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 23m +0.2 4.57-0.2 +0.2
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2SJ606
O-263
--42A
mosfet 4800
,mosfet smd 4800
4800 power mosfet
4800 mosfet
2SJ606
,Transistor smd 4800
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Untitled
Abstract: No abstract text available
Text: Transistors MOSFET IC SMD Type Product specification 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode
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2SK3355
O-263
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2
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2SK3354
O-263
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S 170 MOSFET TRANSISTOR
Abstract: smd transistor nc 61 2SK3355
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3355 TO-263 +0.1 1.27-0.1 RDS on 2 = 8.8m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 9800 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2
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2SK3355
O-263
S 170 MOSFET TRANSISTOR
smd transistor nc 61
2SK3355
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785Nm
Abstract: infra red diode 785nm diode PL78T040FC2D-T-0 TO 5.6mm package
Text: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Near Infra Red Series of laser diodes. These units are available in ready-to-use, fibercoupled packages, including FC, ST, and SC receptacles, as well as fiberpigtailed units.
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PL78/83/98
780nm,
830nm
980nm.
200um
pl788398
785Nm
infra red diode
785nm diode
PL78T040FC2D-T-0
TO 5.6mm package
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gat 20
Abstract: smd transistor 26 2SK3479 1013M
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3479 TO-263 +0.1 1.27-0.1 RDS on 2 = 13 m MAX. (VGS = 4.5 V, ID = 42 A) Low Ciss: Ciss = 11000 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 MAX. (VGS = 10 V, ID = 42 A) +0.2 4.57-0.2
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2SK3479
O-263
gat 20
smd transistor 26
2SK3479
1013M
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NS-106
Abstract: 2SK3354 NS 106
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2
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2SK3354
O-263
NS-106
2SK3354
NS 106
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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IR Laser diode
Abstract: No abstract text available
Text: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging op tions for its’ Near Inf ra Red Series of laser diodes. These units are a vailable in read y-to-use, f ibercoupled pa ckages, including FC, ST, and SC rece ptacles, as well as f iberpigtailed units.
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PL78/83/98
980nm.
200um
pl788398
IR Laser diode
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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OCR Scan
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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2N2067
Abstract: 2N3214 2N158 germanium transistors NPN 2N3215 TO13 MT28 2N1759 2N158A 2N1042
Text: DI O D E T R A N S I S T O R CO INC ~flM 2 8 4 8 3 5 2 D I O D E T R A N S I S T O R C O INC DE Ja àMfl35E D Q D O i n 84D 0 0 1 1 9 |~ D r- ,5 3 - 0 7 DIODE TRANSISTOR CO.INC. 201 686-0400 • Tela*: 139-385 • O u ts id e N Y & N J «rea c a ll T O L L F R E E 800-526-4581
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2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
MT-28
MT-28
2N2067
2N3214
2N158
germanium transistors NPN
2N3215
TO13
MT28
2N1759
2N158A
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