IRG7PH42U
Abstract: No abstract text available
Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode
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IRG7PH42UD1M
1300Vpk
IRFPE30
O-247AC
IRG7PH42U
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IRG7PH42U
Abstract: No abstract text available
Text: IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode
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IRG7PH42UD1MPbF
1300Vpk
O-247AD
IRG7PH42UD1M"
IRG7PH42UD1MPbF"
IRG7PH42U
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IRG7PH42UD1M
Abstract: 30A, 600v RECTIFIER DIODE
Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode
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IRG7PH42UD1M
1300Vpk
D-020D
IRG7PH42UD1M
30A, 600v RECTIFIER DIODE
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IRG7PH42U
Abstract: No abstract text available
Text: IRG7PH42UD1M INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode
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IRG7PH42UD1M
1300Vpk
IRG7PH42U
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BAW78M
Abstract: SCT595 78-AD
Text: BAW78M Silicon Switching Diode 4 Switching applications 5 High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage
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BAW78M
VPW05980
SCT595
Aug-21-2001
EHB00047
EHB00048
BAW78M
SCT595
78-AD
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SCT-595
Abstract: 78-AD
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPW05980
SCT-595
Oct-08-1999
EHB00047
EHB00048
SCT-595
78-AD
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFK78N50P3 IXFX78N50P3 Polar3TM HiPerFETTM Power MOSFETs VDSS ID25 = = 500V 78A 68m 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions
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IXFK78N50P3
IXFX78N50P3
250ns
O-264
78N50P3
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C67076-A2010-A70
Abstract: 06 diode
Text: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM 50 GAL 120 DN2 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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C67076-A2010-A70
Mar-29-1996
C67076-A2010-A70
06 diode
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Eupec BSM
Abstract: C67076-A2010-A70
Text: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GAL 120 DN2 1200V 78A IC Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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C67076-A2010-A70
Eupec BSM
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bsm 75 gal 120 dn2 CIRCUIT DIAGRAM
Abstract: C67076-A2010-A70
Text: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GAL 120 DN2 1200V 78A IC Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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C67076-A2010-A70
bsm 75 gal 120 dn2 CIRCUIT DIAGRAM
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bsm 75 gal 120 dn2
Abstract: gal 900
Text: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GAL 120 DN2 1200V 78A IC Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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C67076-A2010-A70
Nov-24-1997
bsm 75 gal 120 dn2
gal 900
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C67076-A2010-A70
Abstract: No abstract text available
Text: BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GAL 120 DN2 1200V 78A IC Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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C67076-A2010-A70
C67076-A2010-A70
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5KP75A
Abstract: SA75A 88 867 103
Text: TVS DIODE Electrical Characteristics SA & 5KP Series: 5 to 180 Volts Transient Voltage Suppressor 500W & 5000W Break Reverse Maximum Series: SA (500W PPK) Series: 5KP (5000W PPK) Down Stand-Off Clamping Breakdown Voltage Peak Reverse Breakdown Voltage Peak
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DO-15
SA75A
P-600
5KP75A
C5DC04
5KP75A
SA75A
88 867 103
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5KP75A
Abstract: SA75A tvs diode 5000W
Text: TVS DIODE Electrical Characteristics SA & 5KP Series: 5 to 180 Volts Transient Voltage Suppressor 500W & 5000W Break Reverse Maximum Series: SA (500W PPK) Series: 5KP (5000W PPK) Down Stand-Off Clamping Breakdown Voltage Peak Reverse Breakdown Voltage Peak
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DO-15
SA75A
P-600
5KP75A
C5DC04
5KP75A
SA75A
tvs diode 5000W
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lt 39 diode smd
Abstract: smd diode 78a IRG4ZH71KD
Text: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,
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IRG4ZH71KD
SMD-10
lt 39 diode smd
smd diode 78a
IRG4ZH71KD
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600V 25A Ultrafast Diode
Abstract: IRGPC50FD2 IRGPC50FD 600v 20a IGBT transistor c128 current rating igbt 600v 20a
Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPC50FD2
10kHz)
O-247AC
C-132
600V 25A Ultrafast Diode
IRGPC50FD2
IRGPC50FD
600v 20a IGBT
transistor c128 current rating
igbt 600v 20a
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IRGPC50FD2
Abstract: No abstract text available
Text: PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGPC50FD2
10kHz)
O-247AC
C-132
IRGPC50FD2
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Untitled
Abstract: No abstract text available
Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses
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7480A
IRG7PH42UD1PbF
IRG7PH42UD1-EP
1300Vpk
O-247AD
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FDD6676A
Abstract: FDD6676AS
Text: FDD6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676AS
FDD6676AS
FDD6676A
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Untitled
Abstract: No abstract text available
Text: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDD6676S
FDS6676S
FDD6676S
O-252
O-252)
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Untitled
Abstract: No abstract text available
Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC50FDPbF
O-247AC
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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siemens igbt
Abstract: No abstract text available
Text: SIEMENS BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate BSM 50 GAL 120 DN2 UJ Ï? Type 1c 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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S00022
siemens igbt
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VQE 23 E
Abstract: VQE 23 F vqe 23 c VQE 23 D VQE 23 VQE 12
Text: euoec F BSM 50 G AL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 50 GAL 120 DN2 VCE h 1200V 78A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2010-A70
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C67076-A2010-A70
Nov-24-1997
VQE 23 E
VQE 23 F
vqe 23 c
VQE 23 D
VQE 23
VQE 12
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