Untitled
Abstract: No abstract text available
Text: 1N 5817.1N 5819 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A
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Untitled
Abstract: No abstract text available
Text: SM 5817.SM 5819 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Schottky barrier rectifiers diodes 5 0 ; < 6
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hM sot-353
Abstract: SBAS21DW5T1G BAS19LT1G SBAS20LT1G SBAS21LT1G BAS21 SOT-23 SBAS21LT3G SOT23 Marking JX HM SOT23-3 bas21dw5t
Text: BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com Features HIGH VOLTAGE SWITCHING DIODE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique
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BAS19L,
BAS20L,
SBAS20L,
BAS21L,
SBAS21L,
BAS21DW5,
SBAS21DW5
AEC-Q101
OT-23
BAS19
hM sot-353
SBAS21DW5T1G
BAS19LT1G
SBAS20LT1G
SBAS21LT1G
BAS21 SOT-23
SBAS21LT3G
SOT23 Marking JX
HM SOT23-3
bas21dw5t
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BAS19L
Abstract: No abstract text available
Text: BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com Features HIGH VOLTAGE SWITCHING DIODE • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique
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BAS19L,
BAS20L,
SBAS20L,
BAS21L,
SBAS21L,
BAS21DW5,
SBAS21DW5
BAS19
BAS20,
SBAS20
BAS19L
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NSVBAS21
Abstract: marking code js sod323
Text: BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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BAS21HT1,
NSVBAS21HT1G,
NSVBAS21HT3G
AEC-Q101
OD-323
BAS21HT1/D
NSVBAS21
marking code js sod323
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Untitled
Abstract: No abstract text available
Text: BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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BAS21HT1G,
NSVBAS21HT1G,
NSVBAS21HT3G
AEC-Q101
BAS21HT1/D
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marking code js sod323
Abstract: Diode marking CODE 5M SOD
Text: BAS21HT1G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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BAS21HT1G,
NSVBAS21HT1G,
NSVBAS21HT3G
AEC-Q101
OD-323
BAS21HT1/D
marking code js sod323
Diode marking CODE 5M SOD
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Untitled
Abstract: No abstract text available
Text: BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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BAS21HT1,
NSVBAS21HT1G,
NSVBAS21HT3G
BAS21HT1/D
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NSVBAS21
Abstract: marking code js sod323
Text: BAS21HT1, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • NSV Prefix for Automotive and Other Applications Requiring • HIGH VOLTAGE SWITCHING DIODE Unique Site and Control Change Requirements
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BAS21HT1,
NSVBAS21HT1G,
NSVBAS21HT3G
AEC-Q101
OD-323
BAS21HT1/D
NSVBAS21
marking code js sod323
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BAS19L
Abstract: No abstract text available
Text: BAS19L, BAS20L, BAS21L, BAS21DW5 High Voltage Switching Diode Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant HIGH VOLTAGE SWITCHING DIODE • S and NSV Prefixes for Automotive and Other Applications
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BAS19L,
BAS20L,
BAS21L,
BAS21DW5
BAS19
BAS20
BAS21
BAS19L
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Untitled
Abstract: No abstract text available
Text: BAV70DXV6T5G Monolithic Dual Switching Diode Common Cathode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current
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BAV70DXV6T5G
BAV70DXV6T1
BAV70DXV6T1/D
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Untitled
Abstract: No abstract text available
Text: BAT54M3T5G Schottky Barrier Diode This Schottky barrier diode is designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAT54M3T5G
BAT54M3T5G
BAT54M3/D
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Untitled
Abstract: No abstract text available
Text: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
SC-70
AEC-Q101
SC-70
OT-323)
M1MA141WAT1G
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Abstract: No abstract text available
Text: M1MA141WAT1G, M1MA142WAT1G, SM1MA142WAT1G Common Anode Silicon Dual Switching Diode http://onsemi.com This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WAT1G,
M1MA142WAT1G,
SM1MA142WAT1G
M1MA141WAT1/D
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Untitled
Abstract: No abstract text available
Text: M1MA141WKT1G, M1MA142WKT1G, SM1MA142WKT1G, Common Cathode Silicon Dual Switching Diode http://onsemi.com This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low
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M1MA141WKT1G,
M1MA142WKT1G,
SM1MA142WKT1G,
M1MA141WKT1/D
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k 790
Abstract: BAS19LT1G BAS19L
Text: BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com HIGH VOLTAGE SWITCHING DIODE Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 • S and NSV Prefixes for Automotive and Other Applications
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BAS19L,
NSVBAS19L,
BAS20L,
SBAS20L,
BAS21L,
SBAS21L,
BAS21DW5,
SBAS21DW5
AEC-Q101
OT-23
k 790
BAS19LT1G
BAS19L
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BAS19LT1G
Abstract: BAS19L
Text: BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5 High Voltage Switching Diode http://onsemi.com HIGH VOLTAGE SWITCHING DIODE Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−23 • S and NSV Prefixes for Automotive and Other Applications
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BAS19L,
NSVBAS19L,
BAS20L,
SBAS20L,
BAS21L,
SBAS21L,
BAS21DW5,
SBAS21DW5
AEC-Q101
OT-23
BAS19LT1G
BAS19L
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Abstract: No abstract text available
Text: NSR1020MW2 Schottky Barrier Diodes This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in
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NSR1020MW2
NSR1020MW2/D
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Abstract: No abstract text available
Text: MMBD301M3T5G Silicon Hot-Carrier Diode SCHOTTKY Barrier Diode The MMBD301M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed primarily for high−efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications
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MMBD301M3T5G
OT-723
MMBD301M3/D
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514AA
Abstract: BAS16P2T5G
Text: BAS16P2T5G Switching Diode The BAS16P2T5G Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOD−923 surface mount package. This device is ideal for low−power surface mount applications, where board space is
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BAS16P2T5G
OT-23
OD-923
BAS16P2/D
514AA
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Untitled
Abstract: No abstract text available
Text: BAS16P2T5G Switching Diode The BAS16P2T5G Switching Diode is a spin−off of our popular SOT−23 three−leaded device. It is designed for switching applications and is housed in the SOD−923 surface mount package. This device is ideal for low−power surface mount applications, where board space is
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BAS16P2T5G
OT-23
OD-923
BAS16P2/D
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diode marking N9
Abstract: No abstract text available
Text: DAN222M3T5G Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium.
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DAN222M3T5G
OT-723
631AA
DAN222M3/D
diode marking N9
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Untitled
Abstract: No abstract text available
Text: DAN222, NSVDAN222 Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications, where board space is at a
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DAN222,
NSVDAN222
OT-416/SC-75
AEC-Q101
DAN222/D
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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