DIODE RF DETECTOR
Abstract: "RF Power" MA40053 RF Power detector video amplifier MA40053-54 noise diode rf detector diode low power
Text: MA40053-54 SILICO SCHOTTKY DETECTOR DIODE PACKAGE STYLE 54 DESCRIPTION: The ASI MA40053-54 is a Silicon Schottky Detector Diode designed for use in Stripline, coaxial detectors and waveguides. FEATURES: • • High Sensitivity. Low Noise Figure. MAXIMUM RATINGS
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MA40053-54
MA40053-54
DIODE RF DETECTOR
"RF Power"
MA40053
RF Power detector
video amplifier
noise diode
rf detector diode low power
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australia heat sink
Abstract: ARR03P1900
Text: Industrial Microphotonics Company 1900W QCW Laser Diode Array Part Number: ARR03P1900 Y PACKAGE • Packaged 54 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER
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ARR03P1900
785-1064nm
------1900Wt
laser2000
australia heat sink
ARR03P1900
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australia heat sink
Abstract: ARR03P2400
Text: Industrial Microphotonics Company 2400W QCW Laser Diode Array Part Number: ARR03P2400 Y PACKAGE • Packaged 54 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER
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ARR03P2400
785-1064nm
------2400Wt
laser2000
australia heat sink
ARR03P2400
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ARR03P1900
Abstract: No abstract text available
Text: 1900W QCW Laser Diode Array Part Number: ARR03P1900 Y PACKAGE • Packaged 54 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN QCW Peak Power Output
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ARR03P1900
785-1064nm
------1900W
B-10/01
ARR03P1900
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Untitled
Abstract: No abstract text available
Text: MA4883 MEDIUM BARRIER SCHOTTKY DIODE DESCRIPTION: PACKAGE STYLE 54 The ASI MA4883 is a Silicon Schottky Mixer Diode designed for use in Stripline and coaxial mixers and upconverters. FEATURES: • • High Reliability. Low Noise Figure. MAXIMUM RATINGS I 2.0 mA
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MA4883
MA4883
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hsch 3486 zero bias schottky diode
Abstract: HSCH-3486 MA4E928B ma4e928B-54 "zero-bias schottky diode" HSCH3486 20 GHz PIN diode zero bias schottky diode detector
Text: HSCH-3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE: • Replacement for HSCH3486 and MA4E928B-54
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HSCH-3486
HSCH-3486
HSCH3486
MA4E928B-54
hsch 3486 zero bias schottky diode
MA4E928B
ma4e928B-54
"zero-bias schottky diode"
HSCH3486
20 GHz PIN diode
zero bias schottky diode detector
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ma4853
Abstract: MA4853M
Text: MA4853M MEDIUM BARRIER SCHOTTKY MATCHED PAIR DIODE PACKAGE STYLE 54 DESCRIPTION: The ASI MA4853M is a Silicon Schottky Mixer Matched pair Diode. Designed for use in Stripline and coaxial mixers and upconverters. FEATURES: • • High Reliability. Low Noise Figure.
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MA4853M
MA4853M
ma4853
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BYW52 200
Abstract: No abstract text available
Text: BYW52 / 53 / 54 / 55 / 56 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading
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BYW52
OD-57
MIL-STD-750,
BYW53
BYW54
BYW55
BYW56
BYW52 200
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BYW52
Abstract: BYW52 200
Text: BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading
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BYW52
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYW53
BYW54
BYW55
BYW56
BYW52 200
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BYW52
Abstract: BYW53 BYW54 BYW55 BYW56 BYW52 200
Text: BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading
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BYW52
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYW52
OD-57
BYW53
18-Jul-08
BYW54
BYW55
BYW56
BYW52 200
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BYW56 v
Abstract: BYW52 BYW53 BYW54 BYW55 BYW56 BYW52 200
Text: BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading
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BYW52
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BYW52
OD-57
BYW53
08-Apr-05
BYW56 v
BYW54
BYW55
BYW56
BYW52 200
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Untitled
Abstract: No abstract text available
Text: MA45340-54 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.33pì C1/C2 Min. Capacitance Ratio4.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.750 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleAxial
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MA45340-54
Voltage30
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Untitled
Abstract: No abstract text available
Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH15S120
PG-TO220-2
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D15S120
Abstract: PG-TO220-2 PG-TO220 IDH15S120 JESD22 C15T
Text: IDH15S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 54 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH15S120
PG-TO220-2
IDH15S1ngerous
D15S120
PG-TO220-2
PG-TO220
IDH15S120
JESD22
C15T
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Untitled
Abstract: No abstract text available
Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
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C4D10120D
O-247-3
O-24planted
C4D10120A
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C4D10120
Abstract: No abstract text available
Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
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C4D10120D
O-247-3
O-24planted
C4D10120A
C4D10120
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Untitled
Abstract: No abstract text available
Text: C4D40120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; = 54 A TC<135˚C Qc Features • • • • • 260 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D40120D
O-247-3
C4D40120D
C4D40120
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C4D10120
Abstract: No abstract text available
Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
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C4D10120D
O-247-3
O-247
C4D10120D
C4D10120
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Untitled
Abstract: No abstract text available
Text: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYP53
BYP54
BYP53/54
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BYY53
Abstract: BYY53-75 BYY54 hermetic press-fit diode
Text: BYY53 / BYY54 25A Silicon Power Rectifier Diode Part no. Description The BYY53/54 are hermetically sealed 25Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYY53
BYY54
BYY53/54
25Adiodes,
BYY53-1200
BYY54
BYY53-75
hermetic press-fit diode
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BYP54-800
Abstract: BYP53-800 BYP53 BYP53-75 BYP54 hermetic press-fit diode zetex MARKING CODE
Text: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYP53
BYP54
BYP53/54
BYP54-800
BYP53-800
BYP53-75
BYP54
hermetic press-fit diode
zetex MARKING CODE
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marking code zetex
Abstract: hermetic press-fit diode BYY53 BYY53-75 BYY54 zetex MARKING CODE
Text: BYY53 / BYY54 25A Silicon Power Rectifier Diode Part no. Description The BYY53/54 are hermetically sealed 25Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYY53
BYY54
BYY53/54
25Adiodes,
marking code zetex
hermetic press-fit diode
BYY53-75
BYY54
zetex MARKING CODE
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Diode BAY 93
Abstract: No abstract text available
Text: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35
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Jun7/0474
Diode BAY 93
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19T8
Abstract: 19t8 tube 6T8-5T8-19T8 6T8 tube ET-T893 180J rs tube general electric
Text: |ftjb 6T8 5T8 19T8 6 T 8 -5 T 8 -1 9 T 8 ET-T893 TRIPLE-DIODE TRIODE Page 1 8-54 TUBES DESCRIPTION AND RATING1 The 6T8 is a m iniature triple-diode, high-mu triode intended primarily for use as a combined AM detector, F M detector, and audio-frequency voltage
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6T8-5T8-19T8
ET-T893
19T8
19t8 tube
6T8-5T8-19T8
6T8 tube
ET-T893
180J
rs tube
general electric
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