5100 b2
Abstract: No abstract text available
Text: SB 520.SB 5100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes SB 520.SB 5100 7 8 1
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ECONO2-6PACK IGBT module
Abstract: IC 7425 datasheet IR E78996 IR E78996 105 IRF E78996 E78996 IR ic 4075 datasheet or gate GB35XF120K
Text: PD - 94570 GB35XF120K IGBT 6PACK MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB35XF120K
ECONO2-6PACK IGBT module
IC 7425 datasheet
IR E78996
IR E78996 105
IRF E78996
E78996 IR
ic 4075 datasheet or gate
GB35XF120K
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Emcore solar cell
Abstract: ATJ photovoltaic cell solar cell "PHOTOVOLTAIC CELL" triple-junction "solar cell" diode cell EMCORE ATJ
Text: BTJM Photovoltaic Cell Triple-Junction with Monolothic Diode Solar Cell for Space Applications SPACE PHOTOVOLTAICS 28% Minimum Average Efficiency Features & Characteristics Highest efficiency flight cell with monolithic diode in the market Triple-Junction with Monolithic Diode BTJM InGaP/InGaAs/Ge Solar
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EWRP036
AS9100
Emcore solar cell
ATJ photovoltaic cell
solar cell
"PHOTOVOLTAIC CELL"
triple-junction "solar cell"
diode cell
EMCORE ATJ
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RM1200DG
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DG-66S ● IF . 1200A ● VRRM . 3300V
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RM1200DG-66S
18K/kW
RM1200DG
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RM200DG-130S
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM200DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM200DG-130S ● IF . 200A ● VRRM . 6500V
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RM200DG-130S
66K/kW
RM200DG-130S
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RM600DG-130S
Abstract: high voltage diode module high voltage diodes
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600DG-130S ● IF . 600A ● VRRM . 6500V
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RM600DG-130S
22K/kW
RM600DG-130S
high voltage diode module
high voltage diodes
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RM300DG-90S
Abstract: rm300DG
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM300DG-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM300DG-90S ● IF . 300A ● VRRM . 4500V
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RM300DG-90S
66K/kW
RM300DG-90S
rm300DG
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RM400DG-66S
Abstract: No abstract text available
Text: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM400DG-66S ● IF . 400A ● VRRM . 3300V
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RM400DG-66S
Scre000
18K/kW
RM400DG-66S
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5SLD 1200J450350
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1200J450350
CH-5600
5SLD 1200J450350
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1436-00 10-2013 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0600P450300
CH-5600
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iec 61287
Abstract: 1200J450350 5SLD1200J450350
Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1200J450350
CH-5600
1200J450350
iec 61287
5SLD1200J450350
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5SLG 0600P450300
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1436-01 01-2014 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0600P450300
CH-5600
5SLG 0600P450300
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1200J450350
UL1557,
E196689
CH-5600
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S 437 Diode
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 ABB HiPakTM DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1200J450350
CH-5600
1200J450350
S 437 Diode
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FP-108-1
Abstract: 2SB1121 FP108 1.5A COMMON CATHODE 2088a TA0316
Text: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN5100
FP108
FP108
2SB1121
SB01015CP,
FP108]
FP-108-1
1.5A COMMON CATHODE
2088a
TA0316
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scr 300 amps
Abstract: T30P600S scr 250 amps 2000 Volt D77P4400 D52P1800S T52P800S 5000 volt scr D30P400S T30P700S D38P1000S
Text: DIODE CAPSULES & SCR CAPSULES Diode Capsules CKE Number D30P400S D30P1200S D38P750S D38P1000S D38P1000S1 D38P1000S3 D38P1200S D38P1500S D52P1800S D52P2400S D77P2900S D77P3900S D77P4400S Vrrm volts 500-1500 500-1500 1500-3000 1000-2000 1500-2600 3500-4500
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D30P400S
D30P1200S
D38P750S
D38P1000S
D38P1000S1
D38P1000S3
D38P1200S
D38P1500S
D52P1800S
D52P2400S
scr 300 amps
T30P600S
scr 250 amps 2000 Volt
D77P4400
D52P1800S
T52P800S
5000 volt scr
D30P400S
T30P700S
D38P1000S
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MARKING 108
Abstract: FP-108-1 2SB1121 FP108 TA0316
Text: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN5100
FP108
FP108
2SB1121
SB01015CP,
FP108]
MARKING 108
FP-108-1
TA0316
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DPG30IM300PC
Abstract: No abstract text available
Text: DPG30IM300PC HiPerFRED² = High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number Backside: cathode 1 3 Features / Advantages: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour
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DPG30IM300PC
60747and
20110607b
DPG30IM300PC
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diode 15b
Abstract: scr 500a CD62 CD621615B 15B diode Diode 1600V To 220 powerex cd62 powerex cd67
Text: CD62_15B CD67_15B POW-R-BLOKTM Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex SCR/Diode Modules are designed for use in applications
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L1200
diode 15b
scr 500a
CD62
CD621615B
15B diode
Diode 1600V To 220
powerex cd62
powerex cd67
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IGBT welder circuit
Abstract: scr drive circuit diagram scr driving circuit for dc motor CD62 CD621615A powerex pow-r-blok powerex cd62 powerex cd67
Text: CD62_15A CD67_15A TM POW-R-BLOK Dual SCR/Diode Isolated Module 150 Amperes / Up to 1600 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex SCR/Diode Modules are designed for use in applications
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Amperes00
IGBT welder circuit
scr drive circuit diagram
scr driving circuit for dc motor
CD62
CD621615A
powerex pow-r-blok
powerex cd62
powerex cd67
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN 5100 No.5100 /I _ FP108 SA iYO, TR : PN P Epitaxial Planar Silicon T ransistor SBD : Schottky B arrier Diode DC/DC Converter Applications F e a tu re s •Composite type with a PN P transistor and a Schottky b arrier diode contained in one packge,
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OCR Scan
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FP108
FP108
2SB1121
SB10-015CP,
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100C1295
Abstract: DSW480
Text: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 270 DAICO INDUSTRIES
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OCR Scan
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DC12000
S0097
100C1297
100C1287
DS0319
DS0820
100C1295
DSW480
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DSWM5
Abstract: No abstract text available
Text: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES
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OCR Scan
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DC-12000
DS0519
DC-400
100C0347
DSWT1981
DSWT2180
DS0097
100C1297
100C1287
DS0319
DSWM5
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions
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H11J1-H11J5
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