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    DIODE 50WQ06 Search Results

    DIODE 50WQ06 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 50WQ06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term


    Original     		PDF VS-50WQ06FNPbF O-252AA) 2002/95/EC J-STD-020, VS-50WQ06FNPbF 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability 3 Anode • Halogen-free according to IEC 61249-2-21


    Original     		PDF VS-50WQ06FN-M3 O-252AA) J-STD-020, 2002/95/EC VS-50WQ06FN-M3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FNHM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Popular D-PAK outline 1 Anode D-PAK TO-252AA 3 Anode


    Original     		PDF VS-50WQ06FNHM3 AEC-Q101 O-252AA) J-STD-020, VS-50WQtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FNHM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Popular D-PAK outline 1 Anode D-PAK TO-252AA 3 Anode


    Original     		PDF VS-50WQ06FNHM3 O-252AA) AEC-Q101 J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term


    Original     		PDF VS-50WQ06FNPbF O-252AA) 2002/95/EC J-STD-020, VS-50WQ06FNPbF 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK TO-252AA 3 Anode • High frequency operation • Guard ring for enhanced ruggedness and long term


    Original     		PDF VS-50WQ06FNPbF O-252AA) 2002/95/EC J-STD-020, VS-50WQ06FNPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability 3 Anode • Halogen-free according to IEC 61249-2-21


    Original     		PDF VS-50WQ06FN-M3 O-252AA) J-STD-020, 2002/95/EC VS-50WQ06FN-M3 11-Mar-11

    A 673 C2

    Abstract: No abstract text available
    Text: VS-50WQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability 3 Anode • Halogen-free according to IEC 61249-2-21


    Original     		PDF VS-50WQ06FN-M3 O-252AA) J-STD-020, 2002/95/EC VS-50WQ06FN-M3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A A 673 C2

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability 3 Anode • Halogen-free according to IEC 61249-2-21


    Original     		PDF VS-50WQ06FN-M3 O-252AA) J-STD-020, 2002/95/EC VS-50WQ06FN-M3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-21094 rev. B 08/06 50WQ06FNPbF 5.5 Amp SCHOTTKY RECTIFIER IF AV = 5.5Amp VR = 60V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 5.5 A VRRM 60 V IFSM @ tp = 5 s sine 320 A VF @ 5 Apk, TJ = 125°C


    Original     		PDF PD-21094 50WQ06FNPbF 50WQ06FNPbF O-252AA

    50WQ06FN

    Abstract: No abstract text available
    Text: 50WQ06FNPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • • • • • Popular D-PAK outline Available Small foot print, surface mountable RoHS* Low forward voltage drop COMPLIANT High frequency operation Guard ring for enhanced ruggedness and long term


    Original     		PDF 50WQ06FNPbF 50WQ06FNPbF 18-Jul-08 50WQ06FN

    50WQ06FN

    Abstract: No abstract text available
    Text: Bulletin PD-20525 rev. G 05/06 50WQ06FN 5.5 Amp SCHOTTKY RECTIFIER IF AV = 5.5Amp VR = 60V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 5.5 A VRRM 60 V IFSM @ tp = 5 s sine 320 A VF @ 5 Apk, TJ = 125°C


    Original     		PDF PD-20525 50WQ06FN 50WQ06FN

    Untitled

    Abstract: No abstract text available
    Text: VS-50WQ06FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 1 Anode D-PAK 3 Anode • Guard ring for enhanced ruggedness and long term


    Original     		PDF VS-50WQ06FNPbF 2002/95/EC VS-50WQ06FNPbF 18-Jul-08

    50WQ06FN

    Abstract: No abstract text available
    Text: 50WQ06FNPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • Popular D-PAK outline Base cathode 4, 2 • Small foot print, surface mountable • Low forward voltage drop • High frequency operation 1 Anode D-PAK • Guard ring for enhanced ruggedness and long term


    Original     		PDF 50WQ06FNPbF 2002/95/EC AEC-Q101 50WQ06FNPbF 60lectual 18-Jul-08 50WQ06FN

    50WQ06FN

    Abstract: No abstract text available
    Text: Bulletin PD-20525 rev. E 03/03 50WQ06FN 5.5 Amp SCHOTTKY RECTIFIER D-Pak TO-252AA Major Ratings and Characteristics Characteristics Description/ Features 50WQ06FN Units IF(AV) Rectangular The 50WQ06FN surface mount Schottky rectifier has been designed for applications requiring low forward drop and


    Original     		PDF PD-20525 50WQ06FN O-252AA) 50WQ06FN O-252AA

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    smd diode f54

    Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
    Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040


    OCR Scan     		PDF 10MQ040 10MQ060 10MQ090 15MQ040 10BQ015 10BQ040 10BQ060 10BQ100 30BQ015 30BQ040 smd diode f54 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150