diode 5082-3039
Abstract: No abstract text available
Text: 5082-3039 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: TheASI 5082-3039 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 150 V PDISS 250 mW @ TA = 25 °C TJ -65 °C to +200 °C
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Untitled
Abstract: No abstract text available
Text: 5082-3039 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.25pò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m
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1N5767
Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers,
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5989-3339EN
1N5767
DIODE T25
in5719
1nxxxx diode
1N5712
1N5719
RS-296-D
digital phase shifters
1N5 diode
5082-XXXX
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5082-XXXX
Abstract: 1N5712 1N5719 1N5767 RS-296-D 1N5 diode 30 MHz phase shifters 5082-3188
Text: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3081 5082-3081 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control
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5082-3xxx
1N5719,
1N5767,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N57xx
5082-XXXX
1N5712
1N5719
1N5767
RS-296-D
1N5 diode
30 MHz phase shifters
5082-3188
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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1N5767
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features
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1N5719,
1N5767,
IN5767
1N5767
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1N5 diode
Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Text: Products > RF ICs/Discretes > PIN Diodes > Axial Glass Packaged > 5082-3080 5082-3080 axial lead glass packaged PIN diodes Description Lifecycle status: Active Features The 5082-3xxx series of current controlled PIN diodes are specified for use in control
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5082-3xxx
1N5719,
1N5767,
5082-xxxx
5082xxxx
1N5712
T25/1N57xx
1N57xx
1N5 diode
1N5712
1N5719
1N5767
RS-296-D
5082-XXXX
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diode 5082-3077
Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications
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1N5719,
1N5767,
IN5719
5082-xxxx
5082-xxxx
1N5712
5967-5812E
5968-7182E
diode 5082-3077
IN5719
1N5767
5082-3039
diode 5082-3080
1N5 diode
1N5719
F 5082
1N5712
RS-296-D
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1N5767
Abstract: IN5719 1nxxxx diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5968-7182EN
1N5767
IN5719
1nxxxx diode
5082-XXXX
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in5719
Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Text: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching
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1N5719,
1N5767,
5082-3xxx/
1N57xx
5968-7182E
5989-3339EN
in5719
DIODE T25
5082-XXXX
5082-3001
1N5719
diode 5082-3077
diode 5082- 3039
5082-3080
1N57xx
1Nxx
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hp 3077
Abstract: HP 5082-3188 hp pin diode 5082-3081 hp 3080 diode 1N5767 IN5719 HP 5082-3379 diode hp 3039 1N5719 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications
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5966-0941E
5967-5812E
hp 3077
HP 5082-3188
hp pin diode 5082-3081
hp 3080 diode
1N5767
IN5719
HP 5082-3379
diode hp 3039
1N5719
RS-296-D
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HP 5082-3081
Abstract: 5082-3043 HP 3379 HP 5082-3188 5082-3042 hp 3080 diode 1N5767 diode 5082-3042 diode 5082-3080 in5719
Text: PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications
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schema UP 5135
Abstract: voltmetre diode catalogue military passive component bridge rectifier Facon v10471 et 1102 EUROFARAD 5027A zx 1052
Text: NOUVELLE EDITION NEW ISSUE Filtres “EMI - RFI” “EMI - RFI” Filters CATALOGUE 029 PRODUCT CATALOG 029 w w w. e u r o f a r a d . c o m certifications ISO 9002 : 001-96 / 005-96 Code OTAN : F 1379 NATO Code : F 1379 S.A.S. au capital de 20 246 400 €
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HP 5082-3081
Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Text: H E W L E T T P A CK A RD COMPONENTS 5082 3001/02 HPND-4165/66 5082-3039 1N5719 5082-3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082-3168/88 PIN DIODES FOR RF SWITCHING AND ATTENUATING Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE
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HPND-4165/66Â
1N5719)
1N5767)
curr080,
IN5719
HP 5082-3081
diode 5082-3168
HPND-4165
HP 5082-3168
vhf antenna mtbf
hp 3042
1N5767
5082-3168
diode 5082-3001
5082-3042
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diode 5082-3168
Abstract: 5082-3168 JAN1N5719 1N5719 HP 5082-3168 HPND-4165 1N5767 RS-296-D 1N5719 JAN hp pin diode 5082-3081
Text: \ Whpì 1 ÏKM HEWLETT PACKARD PIN Diodes for R F Sw itching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Outline 15 diodes are available on tape and reel. The tape and
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1N5719,
JAN1N5719/TX
1N5767
HPND-4165/66
RS-296-D.
1N5719
diode 5082-3168
5082-3168
JAN1N5719
HP 5082-3168
HPND-4165
RS-296-D
1N5719 JAN
hp pin diode 5082-3081
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1N5719
Abstract: 1N5719 JAN Jan1N5719
Text: What HEWLETT mL'fiMPACKARD PIN Diodes for RF Switching and Attenuating Technical Data F eatu res • • • • Low Harmonic Distortion Large Dynamic Range Low Series Resistance Low Capacitance D escription/ A pplications These general purpose switch ing diodes are intended for low
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1N5719,
JAN1N5719/TX
1N5767
HPND-4165/66
RS-296-D.
1N5719
JAN1N5719
JAN1N5719TX
MIL-STD-750.
1N5719 JAN
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AV 2075 ANTENNA
Abstract: TXV-3039 tt 2074
Text: HEWLETT-PACKARDn C N PN TS Sfi DE I 4 4 4 7 S A 4 O D O S ^ 11] 4 |~~ 4 4 4 75 84 H E WL ETT-PACKARD» CMPNTS m HIGH RELIABILITY PIN DIODES FOR RF SWITCHING AND ATTENUATING HEW LETT PACKARD DJ-bl'lS 58C 02949 Generic 5082-3001, -3002, -3039 and -3077 TX-3001/2
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TX-3001/2
TXB-3001/2
TXV-3001/2
TXVB-3001/2
TX-3039
TXB-3039
TXV-3039
TXVB-3039
TX-3077
TXB-3077
AV 2075 ANTENNA
tt 2074
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Untitled
Abstract: No abstract text available
Text: • 44475A4 G ütm ib HEWLETT-PACKARD/ 751 CMPNTS «HPA b lE PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance D escription/ A pplications These general purpose switch
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44475A4
1N5719,
JAN1N5719/TX
1N5767
HPND-4165/66
RS-296-D.
1N5719
JAN1N5719
JAN1N5719TX
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Untitled
Abstract: No abstract text available
Text: Wm H E W L E T T ' mL'HMPACK ARD P IN Diodes fo r RF Switching and Attenuating Technical Data Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching
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d823
Abstract: hp 3077 HP 5082-3081 5082-3039 HP 5082-3039 in5767 5082-XXXX hp 3077 diode
Text: Wfipl mHHM HEW LETT PACKARD PEN Diodes for RF Switching and Attenuating Technical Data Features • • • • Low Harm onic D istortion Large Dynam ic Range Low S eries R esistance Low C apacitance Description/Applications These general purpose switching
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1N5719
1N5767
5966-0941E
5967-5812E
d823
hp 3077
HP 5082-3081
5082-3039
HP 5082-3039
in5767
5082-XXXX
hp 3077 diode
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Untitled
Abstract: No abstract text available
Text: W tiai H EW LETT PACKARD mHHM PIN Diodes for RF Switching and Attenuating Technical Data Features • Low Harmonic D istortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low
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5966-0941E
5967-5812E
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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