Untitled
Abstract: No abstract text available
Text: DSB60C30PB preliminary Schottky Diode Gen ² VRRM = 30 V I FAV = 2x 30 A VF = 0.49 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSB60C30PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220
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DSB60C30PB
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diode 5068
Abstract: No abstract text available
Text: SHD114523 SHD114523A SHD114523B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5068, REV.A HERMETIC POWER SCHOTTKY RECTIFIER Low Reverse Leakage Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode •
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SHD114523A
SHD114523B
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Untitled
Abstract: No abstract text available
Text: SHD114523 SHD114523A SHD114523B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5068, REV.- HERMETIC POWER SCHOTTKY RECTIFIER Low Reverse Leakage Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode •
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SHD114523
SHD114523A
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Untitled
Abstract: No abstract text available
Text: SHD114523 SHD114523A SHD114523B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5068, REV.A HERMETIC POWER SCHOTTKY RECTIFIER Low Reverse Leakage Low Forward Voltage Drop Applications: • Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
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SHD114523
SHD114523A
SHD114523B
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DPF60C300HB
Abstract: DPG60C300HB DPG60C300HJ DPG60C300PC
Text: DPF60C300HB HiPerFRED² VRRM = 300 V I FAV = 2x 30 A t rr = 55 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPF60C300HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips
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O-247
60747and
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DPF60C300HB
DPG60C300HB
DPG60C300HJ
DPG60C300PC
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Untitled
Abstract: No abstract text available
Text: DPG80C400HB HiPerFRED² VRRM = 400 V I FAV = 2x 40 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG80C400HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips
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O-247
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Untitled
Abstract: No abstract text available
Text: DPG80C400HB HiPerFRED² VRRM = 400 V I FAV = 2x 40 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG80C400HB Backside: cathode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips
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Untitled
Abstract: No abstract text available
Text: DPG80C300HB HiPerFRED² VRRM = 300 V I FAV = 2x 40 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG80C300HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips
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DPG80C300HB
O-247
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WUM 215 RGB
Abstract: de 535 LI 20 AB D5847
Text: LEDLine 200 COB Built-in PCB lighting modules Nominal voltage: 24 V DC Weight: 8 g Diode spacing given max. assembly: 4.5 mm Connection using a six-pole IDC connector The universal LEDLine 200 is based on COB (Chipon-Board) technology. Owing to its homogeneous
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WU-M-215
D-58478
WUM 215 RGB
de 535
LI 20 AB
D5847
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Untitled
Abstract: No abstract text available
Text: DPG 80 C 400 HB preliminary V RRM = 400 V I FAV = 2x 40 A t rr = 45 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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Abstract: No abstract text available
Text: DPG 80 C 300 HB V RRM = 300 V I FAV = 2x 40 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DPF60C300HB
Abstract: DPG60C300HJ DPG60C300PC
Text: DPF 60 C 300 HB V RRM = 300 V I FAV = 2x 30 A t rr = 55 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DPG60C300HJ
DPG60C300PC
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DPG60C300HB
Abstract: DPF60C300HB dpg60c300pc marking HB diode DPG60C300QB ISOPLUS247 DPG80C300HB diode marking 355 DPG60C300HJ
Text: DPF 60 C 300 HB advanced V RRM = 300 V I FAV = 2x 30 A t rr = 55 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPF 60 C 300 HB Backside: cathode Features / Advantages: Applications: Package:
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DPG60C300HB
DPF60C300HB
dpg60c300pc
marking HB diode
DPG60C300QB
ISOPLUS247
DPG80C300HB
diode marking 355
DPG60C300HJ
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marking HB diode
Abstract: DPG80C400HB diode 0102 HB Electronic Components marking hb DPG 80 C 400 HB 80c400 marking code HB diode hb
Text: DPG 80 C 400 HB preliminary V RRM = 400 V I FAV = 2x 40 A t rr = 45 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 80 C 400 HB Backside: cathode Features / Advantages: Applications: Package:
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marking HB diode
DPG80C400HB
diode 0102
HB Electronic Components
marking hb
DPG 80 C 400 HB
80c400
marking code HB
diode hb
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DPG60C300HB
Abstract: DPG60C300HJ DPG60C300QB ISOPLUS247 DPF60C300HB DPG60C300PC
Text: DPF 60 C 300 HB V RRM = 300 V I FAV = 2x 30 A t rr = 55 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPF 60 C 300 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG60C300HB
DPG60C300HJ
DPG60C300QB
ISOPLUS247
DPF60C300HB
DPG60C300PC
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NS3004
Abstract: No abstract text available
Text: DPG 80 C 300 HB V RRM = 300 V I FAV = 2x 40 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 80 C 300 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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Untitled
Abstract: No abstract text available
Text: ABD Avalanche Breakdown Diode RSSA SURGE PROTECTIVE DEVICES Nominal Breakdown Voltage (VBR) Features 9ROWDJH DW ZKLFK DYDODQFKH FXUUHQW PD\ EHJLQ WR IORZ QRUPDOO\ WKH YROWDJH EHWZHHQ WKH VXUJH DEVRUEHU VOHDGVZKHQP$RIFXUUHQWLVDSSOLHG
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B2010 A
Abstract: A5015
Text: サージ対策部品 SURGE PROTECTIVE DEVICES • AVALANCHE BREAKDOWN DIODE 3000 Series [シリコンサージアブソーバ 3000シリーズ] Rated Peak Impulse Power Dissipation 34,000W（ȝV） 型 名 Model Number B3008 B3010 □3015 □3018
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B3008
B3010
U3022
B3036
U3039
B3056
B3082
U3180
U2007
B2008
B2010 A
A5015
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Untitled
Abstract: No abstract text available
Text: RSSA ZP, CP, U, B SERIES シリコンサージアブソーバ ABD （Avalanche Breakdown Diode） ZP ＣＰ、 Ｕ、 Ｂシリーズは、小サージ耐量から大サージ耐量 まで取り揃えたシリコンサージアブソーバ。用途に応じ静電
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B5007
B5008
B5010
U5022
B5036
U5039
B5056
B5082
U5180
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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4233A
Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8
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533XCD01
534XCD02
535XCQ01
2N1063
2N107Û
4233A
535x
184 324 DIODE
2N5383
2N3055C
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BUZ360
Abstract: C67078-A3204-A2
Text: ÜÖD D • 88D û23StiQS QQISQbô 2 « S I E 6 1 5068 T~~ 3*7- i _D BUZ 360 S IEMENS A K T I E N G E S E L L S C H A F Main ratings N-Channel = 800 V Drain-source voltage K>s = 3,6 A Continuous drain current Draln-source on-resistance ^DS(on =» 3,0 Si Description
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23StiQS
C67078-A3204-A2
aa35b05
001S073
16UVX
BUZ360
C67078-A3204-A2
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