hsch 3486 zero bias schottky diode
Abstract: HSCH-3486 MA4E928B ma4e928B-54 "zero-bias schottky diode" HSCH3486 20 GHz PIN diode zero bias schottky diode detector
Text: HSCH-3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The HSCH-3486 is a Silicon Zero Bias Schottky Barrier Diode Designed for High Sensitivity Detector and Low Starved Mixer Applications up to 10 GHz. FEATURES INCXLUDE: • Replacement for HSCH3486 and MA4E928B-54
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HSCH-3486
HSCH-3486
HSCH3486
MA4E928B-54
hsch 3486 zero bias schottky diode
MA4E928B
ma4e928B-54
"zero-bias schottky diode"
HSCH3486
20 GHz PIN diode
zero bias schottky diode detector
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hsch 3486 zero bias schottky diode
Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
Text: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,
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HSCH-3486
HSMS-8101
5952-9823E
5963-0951E
hsch 3486 zero bias schottky diode
HSMS-2850
HSCH-3486
hsms-10-5
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Power Diode 818
Abstract: ma4e928 "Advanced Semiconductor, Inc" ADVANCED SEMICONDUCTOR ASI3486 HSCH3486
Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928series • -56 dBm TSS Typical @ 10 GHz
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ASI3486
HSCH3486
MA4E928series
ASI30203
Power Diode 818
ma4e928
"Advanced Semiconductor, Inc"
ADVANCED SEMICONDUCTOR
ASI3486
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ma4e928
Abstract: ASI3486 10 GHz pin diode HSCH3486 color code diode HSCH-3486
Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928 series • -56 dBm TSS Typical @ 10 GHz
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ASI3486
HSCH3486
MA4E928
ASI30203
ASI3486
10 GHz pin diode
color code diode
HSCH-3486
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australia heat sink
Abstract: ARR14C160 laser diode array
Text: Industrial Microphotonics Company 160W CW Laser Diode Array Part Number: ARR14C160 EIGHT-SHOOTER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
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ARR14C160
785-1064nm)
laser2000
B-10/99
australia heat sink
ARR14C160
laser diode array
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF1400R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF900R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
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MGY30N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY30N60D/D
MGY30N60D
MGY30N60D/D*
TransistorMGY30N60D/D
MGY30N60D
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LTC4098-3.6
Abstract: No abstract text available
Text: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF600R12IP4
367C4326BC
97F6F8
36F1322
A2CB36
1231423567896AB
4112CD3567896EF
LTC4098-3.6
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MGY30N60D
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264
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MGY30N60D/D
MGY30N60D
MGY30N60D/D*
TransistorMGY30N60D/D
MGY30N60D
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TMBAT49FILM
Abstract: MELF dimensions st TMBAT49 MELF DIODE MARKING CODE
Text: TMBAT49 Small signal Schottky diode Features • very low turn-on voltage ■ fast switching Description The TMBAT49 is a general purpose metal to silicon diode. This device has integrated protection against excessive voltage such as electrostatic discharges.
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TMBAT49
TMBAT49
TMBAT49FILM
MELF dimensions st
MELF DIODE MARKING CODE
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AN4839
Abstract: DS2107SY DS2107SY40 DS2107SY41 DS2107SY42 DS2107SY43 DS2107SY44 DS2107SY45
Text: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode
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DS2107SY
DS4173-4
2500A
DS2107SY45
DS2107SY44
DS2107SY43
DS2107SY42
DS2107SY41
AN4839
DS2107SY
DS2107SY40
DS2107SY41
DS2107SY42
DS2107SY43
DS2107SY44
DS2107SY45
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6-Phase
Abstract: No abstract text available
Text: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode
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DS2107SY
DS4173-4
2500A
DS2107SY45
DS2107SY44
DS2107SY43
DS2107SY42
DS2107SY41
6-Phase
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DS2107SY
Abstract: DS2107SY40 DS2107SY41 DS2107SY42 DS2107SY43 DS2107SY44 DS2107SY45
Text: DS2107SY DS2107SY Rectifier Diode Replaces JOctober 2001 version, DS4173-4.0 DS4173-4.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4500V ■ High Surge Capability IF AV 3329A IFSM APPLICATIONS 52500A ■ Rectification ■ Freewheel Diode
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DS2107SY
DS4173-4
2500A
DS2107SY45
DS2107SY44
DS2107SY43
DS2107SY42
DS2107SY41
DS2107SY
DS2107SY40
DS2107SY41
DS2107SY42
DS2107SY43
DS2107SY44
DS2107SY45
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Untitled
Abstract: No abstract text available
Text: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)
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IRF6893MPbF
IRF6893MTRPbF
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HFAN-02
Abstract: No abstract text available
Text: Application Note: HFAN-02.0.2 Rev.1; 04/08 Laser Diode to Single-Mode Fiber Coupling Efficiency: Part 1 - Butt Coupling Maxim Integrated Products Laser Diode to Single-Mode Fiber Coupling Efficiency: Part 1 - Butt Coupling 1 Introduction For fiber-optic transmitters, it is generally desirable
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ZENER DIODE POWER RATING
Abstract: No abstract text available
Text: Division keyword search: part number search: CDLL5916B #12861 RFQ/Sample Package Zener Voltage Regulator Diode Division Datasheet Ireland SA3-35.PDF Mil-Spec (none) Spice Data (none) Shipping TR13\5000cntTR13 Qual Data glassqual.pdf Description This surface mountable 1.5 W Zener diode series in the JEDEC
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CDLL5916B
SA3-35
TR13\5000cntTR13
DO-213AB
1N5913B
1N5956B
IEEE802
ZENER DIODE POWER RATING
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CMT45N10N3P
Abstract: No abstract text available
Text: CMT45N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode
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CMT45N10
CMT45N10N3P
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Untitled
Abstract: No abstract text available
Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz
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ASI3486
I3486
AS13486
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGY30N60D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGY30N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4
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MGY30N60D/D
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marking A7s
Abstract: siemens em 350 99 DIODE marking 351
Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode
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Q68000-A549
OT-23
BAV99
M0076
marking A7s
siemens em 350 99
DIODE marking 351
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Untitled
Abstract: No abstract text available
Text: L ib 5 3 ^ 3 1 Philips Semiconductors Q O ^bS TQ S IT H APX Preliminary specification VHF variable capacitance diode BB132 N AMER PHILIPS/DISCRETE b'lE 1> QUICK REFERENCE DATA DESCRIPTION The BB132 is a silicon variable capacitance diode in planar technology, with a very high
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BB132
BB132
OD323.
UBC776
002b3T2
MBC672
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12N60D1D
Abstract: 12n60d1
Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description
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HGTG12N60D1D
500ns
12N60D1D
12n60d1
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