635-P5-C-N-RG-300-02
Abstract: SLD-635-P5-C-N-RG-300-02 laser diode 635 nm laser diode chip 635nm 635nm laser diode bare chip
Text: 635-P5-C-N-RG-300-02 UNION OPTRONICS CORP. 635nm Laser Diode chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-02 size : 300*300um Specifications Device Laser Diode Bare Chip Structure Multi-step growth •External dimensions Units : um P-electrode
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635-P5-C-N-RG-300-02
635nm
SLD-635-P5-C-N-RG-300-02
300um
500um
100um
886-3-475-437e
635-P5-C-N-RG-300-02
SLD-635-P5-C-N-RG-300-02
laser diode 635 nm
laser diode chip 635nm
laser diode bare chip
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BAS85
Abstract: BAT85
Text: BAS85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type
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BAS85
DO-35
BAT85.
OD-80)
300us
100mA
BAS85
BAT85
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BAT85
Abstract: No abstract text available
Text: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type
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BAT85
BAS85.
DO-35
300us,
100mA
BAT85
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Untitled
Abstract: No abstract text available
Text: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type
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BAT85
BAS85.
DO-35
300us,
100mA
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MINI-MELF DIODE green CATHODE
Abstract: DIODE WITH SOD CASE green color ring diode DIODE 436
Text: BAS85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type
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BAS85
DO-35
BAT85.
OD-80C)
300us
100mA
MINI-MELF DIODE green CATHODE
DIODE WITH SOD CASE
green color ring diode
DIODE 436
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BAT41
Abstract: LL41
Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
100uA
100OC
200mA
300uS
BAT41
LL41
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mosfet 300V 10A
Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Text: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M01N60
O-251
O-252
O-251/252
00A/S
mosfet 300V 10A
M01N60
mosfet 10V 10A
n channel mosfet
mosfet 10a 600v
2a 400v mosfet to-251
FAST RECOVERY DIODE 10A 400V
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Untitled
Abstract: No abstract text available
Text: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF4N60
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BAT46 sod80
Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80)
100uA
300us,
250mA
BAT46 sod80
BAT46
C 704 diode
MINI-MELF DIODE green CATHODE
DIODE WITH SOD CASE
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Untitled
Abstract: No abstract text available
Text: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF2N60
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Untitled
Abstract: No abstract text available
Text: LZPF7N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF7N60
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mosfet 600V 20A
Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Text: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M02N60
O-251
O-252
O-251/252
O-220
00A/S
mosfet 600V 20A
M02N60
Mosfet 600V, 20A
TO 220 Package High current N CHANNEL MOSFET
MOSFET 400V TO-220
n channel mosfet
600V 2A MOSFET N-channel
N channel mosfet TO220
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Untitled
Abstract: No abstract text available
Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
100uA
100OC
200mA
300uS
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UMR11N DIODE SWITCHING DIODE DESCRIPTION The UTC UMR11N is a small signal switching diode, it uses UTC’s advanced technology to provide customers with high reliability, etc. The UTC UMR11N is suitable for high frequency switching
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UMR11N
UMR11N
UMR11NL-AL6-R
UMR11NG-AL6-R
OT-363
QW-R601-204
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M02N60B
Abstract: MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220 mosfet 600V 20A 4470 mosfet
Text: N Channel MOSFET M02N60B 2.0A PIN CONFIGURATION FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS on Specified at Elevated
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M02N60B
O-251/252
O-220
O-220-3L
M02N60B
MOSFET 400V TO-220
n channel mosfet
600V 2A MOSFET N-channel
N channel mosfet TO220
mosfet 600V 20A
4470 mosfet
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD U20UC30 Preliminary DIODE 20A DIODE DESCRIPTION The UTC U20UC30 is a 20A diode, it uses UTC’s advanced technology to provide the customers with low forward voltage drop and fast switching capability. FEATURES * Low forward voltage drop
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U20UC30
U20UC30
U20UC30L-TA3-T
U20UC30G-TA3-T
U20UC30L-TF3-T
U20UC30G-TF3-T
O-220
O-220F
U20alues
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U-CP-80C0055-preliminary
Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80C0055-preliminary
808nm
886-3-g
U-CP-80C0055-preliminary
808nm 300mw laser diode
laser diode 300mw
TO-CAN
808nm 300mW
TO18 Laser 808nm 300 mw
808nm laser diode
laser diode bare chip
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Untitled
Abstract: No abstract text available
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80C)
100uA
300us,
250mA
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TO18 Laser 808nm 300 mw
Abstract: IR Laser diode laser diode bare chip
Text: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80E0075-preliminary
808nm
886-3-g
TO18 Laser 808nm 300 mw
IR Laser diode
laser diode bare chip
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U-CP-6505001
Abstract: laser diode bare chip
Text: U-CP-6505001 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505001 •Specifications 1 Size : (2) Device: (3) Structure: 200*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-6505001
650nm
300um
100um
U-CP-6505001
laser diode bare chip
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BAW56 Preliminary DIODE DUAL SURFACE MOUNT SWITCHING DIODE DESCRIPTION The UTC BAW56 is a dual surface mount switching diode providing the designers with ultra-fast switching and high conductance. The UTC BAW56 is suitable for general purpose switching
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BAW56
BAW56
BAW56G-AE3-R
OT-23
QW-R601-269
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bat48 sod-80
Abstract: BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE
Text: L L 48 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT48.
OD-80)
100uA
300us,
200mA
500mA
bat48 sod-80
BAT48
200MA diode SOD-80
MINI-MELF DIODE green CATHODE
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U-CP-6505011
Abstract: 650nm 5mw laser 300um 650nm 5mw laser diode laser diode bare chip
Text: U-CP-6505011 UNION OPTRONICS CORP. 650nm Laser Diode Chips 650nm Red Laser Diode Chips U-CP-6505011 •Specifications 1 Size : (2) Device: (3) Structure: 250*250*100 m Laser diode bare chip Double channel , single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-6505011
650nm
300um
100um
U-CP-6505011
650nm 5mw laser
300um
650nm 5mw laser diode
laser diode bare chip
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Diode BAT41
Abstract: BAT41 200MA diode SOD-80 IF1001 MINI-MELF DIODE green CATHODE
Text: L L 41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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DO-35
BAT41.
OD-80)
100uA/300uS
300us
100OC
200mA
Diode BAT41
BAT41
200MA diode SOD-80
IF1001
MINI-MELF DIODE green CATHODE
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