biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MV2103
Diode Motorola 711 2N2905A
pin configuration transistor BC547 2N2222
BC237
2N555
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IDG 600
Abstract: M61880FP 20P2N-A M61880
Text: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.
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M61880FP
REJ03F0068-0100Z
M61880FP
IDG 600
20P2N-A
M61880
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Z6 DIODE
Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
Text: Diode, Zener Silicon Planar Voltage Regulator Diode Feature: Low voltage general purpose voltage regulator diode. Absolute Maximum Ratings Ta = 25°°C Description Symbol Working Voltage Tolerance Value Unit ±5 % 250 mA Repetitive Peak Forward Current IFRM
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Untitled
Abstract: No abstract text available
Text: 1N4148WSFL-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode 2 1 • Fast switching diodes • Base P/N-G3 - green, commercial grade 1 = Cathode 2 = Anode 22611 MARKING example only XY 22610
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1N4148WSFL-G
OD-323
GS08/3K
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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MMAD1108
De218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MAD130P
2N1711 solid state
BC237
MARKING CODE diode sod123 t3
H3T-B
MPS4258
bf244
MSA1022
Bf391
BCY72
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383C
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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IRGS15B60KD
Abstract: IRGSL15B60KD AN-994 C-150 IRGB15B60KD
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
IRGS15B60KD
IRGSL15B60KD
AN-994
C-150
IRGB15B60KD
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AN-994
Abstract: C-150 IRGS15B60KD IRGSL15B60KD IRGB15B60KDPBF
Text: PD - 95194 IRGB15B60KDPbF IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB15B60KDPbF
IRGS15B60KD
IRGSL15B60KD
O-220
O-220AB
O-262
IRGB15B60KDPbF
IRGS15B60KD
AN-994.
AN-994
C-150
IRGSL15B60KD
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Hitachi DSA002726
Abstract: No abstract text available
Text: HL1553 1.55 µm Laser Diode with EA Modulator Description The HL1553 is a 1.55 µm InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a
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HL1553
HL1553
HL1553:
Hitachi DSA002726
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Untitled
Abstract: No abstract text available
Text: PD - 94383 IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGS15B60KD
IRGSL15B60KD
O-262
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C-150
Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Text: PD - 94383B IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383B
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
O-220AB
AN-994.
O-220
C-150
IRF1010
IRF530S
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 94383D IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
O-220AB
AN-994.
O-220
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D757
Abstract: 227G 555D
Text: BY 226G, BY 227G, BY 228G power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter *0 Axial lead diode Standard silicon rectifier diodes BY 226G, BY 227G, BY 228G Forward Current: 3 A Reverse Voltage: 450 to 1500 V
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N81 diode
Abstract: 228S
Text: BY 226S, BY 227S, BY 228S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter .3 Axial lead diode Standard silicon rectifier diodes BY 226S, BY 227S, BY 228S Forward Current: 1,5 A Reverse Voltage: 450 to 1500 V
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A2 DIODE
Abstract: DIODE 40c 0644 A5 DIODE MONOLITHIC DIODE ARRAYS marking Z4 TVS 200 diode 63-37 A4 marking diode C 12 PH diode DIODE marking A2
Text: TVS Diode Arrays TVS Avalanche Diode Array in a Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or
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SP0504BAC,
SP0508BAC,
SP0516BAC
178mm
A2 DIODE
DIODE 40c 0644
A5 DIODE
MONOLITHIC DIODE ARRAYS
marking Z4
TVS 200 diode
63-37
A4 marking diode
C 12 PH diode
DIODE marking A2
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M66515FP
Abstract: m66515 20P2N-A Laser Diode driver making ld
Text: M66515FP Laser Diode Driver/Controller REJ03F0084-0100Z Rev.1.0 Sep.22.2003 Description The M66515 is a laser diode driver/controller that performs drive and controls the laser power control of a type of semiconductor laser diode the anode of which is connected, with the cathode of a photodiode for monitoring, to a stem
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M66515FP
REJ03F0084-0100Z
M66515
M66515FP
20P2N-A
Laser Diode driver
making ld
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1010LT1
MMBD2010T1
MMBD3010T1
MMBD1010LT1
S218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
2N643
BC237
MARKING DP SOT-363
DO204AA
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BC237
Abstract: MMBD2005T1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
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Motorola transistors M 724
Abstract: SD6150
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode M SD6150 3 Anode CASE 29-04, STYLE 4 T O -92 TO-226AA Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 usee)
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SD6150
O-226AA)
Re100
b3b72SS
Motorola transistors M 724
SD6150
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1N914
1N4148
1N4150
1N4565
1N4565A
1N4566
1N4566A
1N4570
1N4570A
1N4571
bc 7-25 pnp
transistor bc 7-25
transistor 724
731 zener diode
transistor B 722
transistor Bc 2n2222
transistor BC 176
MPS6521
transistor 2N5952
TP2222A transistor
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switches
Abstract: Attenuators diode 226 diode 270
Text: S w itc h es and A ttenuato rs Contents PAGE Coaxial PIN Diode Switches SPST PIN Switches SPDT PIN Switches SP3T PIN Switches SP4T PIN Switches SP5T PIN Switches SP6T PIN Switches SP8T PIN Switches DPDT PIN Switches 216 226 234 242 250 258 266 270 Module PIN Diode Switches
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tunnel diode
Abstract: No abstract text available
Text: LIMITER TUNNEL DIODE DETECTORS ML 7718-0000 SERIES DESCRIPTION T his series o f lim iter-detectors offers sim ilar performance advantages to the standard tunnel diode detectors but with extended RF input power range. A silicon PIN diode is integrated at the input o f the device to provide passive
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30dBm
17dBm
-20dBm
tunnel diode
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