1SS201
Abstract: No abstract text available
Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application Low forward voltage : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°°C)
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1SS201
1SS201
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Untitled
Abstract: No abstract text available
Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage Unit in mm : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°°C)
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1SS201
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1SS201
Abstract: 1ss20
Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C)
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1SS201
1SS201
1ss20
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DIODE 1SS201
Abstract: 1SS201
Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.) Maximum Ratings (Ta = 25°°C)
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1SS201
DIODE 1SS201
1SS201
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Untitled
Abstract: No abstract text available
Text: 1SS201 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Unit: mm Ultra High Speed Switching Application z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C)
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1SS201
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1SS101
Abstract: 1SS101 DIODE Xin Semiconductor solar blocking diode 1SS201 1SS301 diode case R-1 1ss20
Text: 1SS101 THUR 1SS301 XIN SEMICONDUCTOR ISO9002 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES R-1 For general purpose applications These diodes features very low turn-on voltage and fastswitching. These devices are protected by a Pnjunction guard ring against excessive voltage, such as electrostatic
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1SS101
1SS301
ISO9002
0063ounce,
50mVp-p
1SS101 DIODE
Xin Semiconductor
solar blocking diode
1SS201
1SS301
diode case R-1
1ss20
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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2fu smd transistor
Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG02
O-220SM
CRG01
CRG04
CMG03
2fu smd transistor
2FK transistor
3FV 60 43
smd diode Lz zener
HN2S02JE
CMZ24
CRS01
DF2S6.2S
1SV101
1SV283B
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diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352
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HN2D01FU
HN2D02FU
OT-23MOD)
02CZ5
diode Z47
z43 diode
Z5.6
Z3.3
S360 DIODE
diode Z27
S368
diode zener z6
1s diode
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS201 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • Low Forward Voltage : Vjr 3 = 0.9V (Typ.) • Fast Reverse Recovery Time : trr = 1.6ns (Typ.) • Small Total Capacitance : C^ —Ö.9pF' (Typ.)
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1SS201
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1SS201
Abstract: No abstract text available
Text: 1SS201 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS201 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • Low Forward Voltage : Vf 1 3 = 0.9V (Typ.) • Fast Reverse Recovery Time : trr= 1.6ns (Typ.) • Small Total Capacitance : Cx = 0.9pF (Typ.)
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1SS201
55MAX.
1SS201
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Untitled
Abstract: No abstract text available
Text: 1SS201 T O SH IB A 1 SS201 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • Low Forward Voltage : V f 3 = 0.9V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : CT = 0.9pF (Typ.)
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1SS201
SS201
01//F
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